BSR13 Search Results

BSR14 SOT23

Abstract: bsr14 bsr13 BSR14,215
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

BSR14

Abstract: BSR13 transistor npn U8 sot23 marking u8
Contextual Info: Transistors IC SMD Type NPN Switching Transistors BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 40 V . 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

BSR14

Abstract: BSR13 BSR15 BSR16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

Contextual Info: Transistors IC SMD Type Product specification BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 40 V . 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

sot23 marking u8

Abstract: BSR15 BSR16 BP317 BSR13 BSR14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING

BSR13

Abstract: BSR14 BSR13R BSR14R RFT-300
Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BSR13 = U 7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.48 0.38 0 .1 4 3 Pin configuration 2.6 2 .4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40

BSR13

Contextual Info: BSR13 BSR13 NPN General Purpose Amplifier • Sourced from process 10. C E B SOT-23 Mark: U7 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage 60 V

BSR13

Abstract: BSR14 CBO10
Contextual Info: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BSR13

Abstract: BSR14 BSR13R
Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N Silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.70 0.50 Pin configuration 1 = BASE 2 * EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BSR13_ BSR 14

BSR14

Abstract: BSR13 IC ti 072 sot23 marking u8
Contextual Info: r Z Z SGS-THOMSON Ä 7 # MO IHimi<gra M gS BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER

sot-23 MARKING CODE ZA

Abstract: marking code VV transistors BSR13 BSR14 marx generator
Contextual Info: •I bbSB^Bl ODcfSSb"! bö4 H A P X N AI1ER P H IL IP S /D IS C R E T E BSR13 BSR14 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

Contextual Info: BSR13 BSR14 L SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m 3.0 2.8 0.14 0.48 t 0.38 11 3 1 1 Pin configuration 1 = BASE 2 = EMITTER 3 » COLLECTOR 2A 11 _K02

bsr13

Abstract: bsr14
Contextual Info: BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY

U8p TRANSISTOR

Abstract: BSR14 BSR13 u8p Transistor MARKING
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear applications.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking

BSR13R

Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS kacje intended fo r sw itch in g anrl linear a p p ii cations in th ic k and th in -fiim circuits. Q U IC K KE.F ERF.NCF: D A T A -BSR13 C o lk.T ior base voltaye ¡open e m itte r BSR14 v CB0 max. 60 75

BSR13

Abstract: BSR14 max6075 BSR14R
Contextual Info: CDÎL BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistors M arking BSR13 = U7 BSR14 = U8 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

sot23 marking u8

Abstract: VBSR13 sot-23 marking U7 BSR13R BSR14 equivalent BSR13 BSR14
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER

BSR13

Abstract: BSR14 BSR15 BSR16 transistor npn U8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 13 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

TRANSISTOR SMD MARKING CODE LF

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

Contextual Info: CD1L BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2A 1 = BASE 2 = EMITTER 3 = COLLECTOR _1,02_ 0.60