BSS123
Abstract: BSS100 equivalent BSS100 bss100 transistor
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field
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BSS100
BSS123
BSS100:
BSS123:
BSS123
BSS100 equivalent
bss100 transistor
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BSS100
Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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BSS100
BSS123
BSS100:
BSS123:
transistor P1 P
bSS100 TRANSISTOR DATASHEET
bss100 transistor
BSS100 TO-92
F1 SOT23
BSS100 equivalent
BSS123
transistor bss123
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BSS100
Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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BSS100
BSS123
BSS100:
BSS123:
bss123
CBVK741B019
F63TNR
PN2222N
BSS100 TO-92
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IRF0120
Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)
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IXTH67N08
IXTM67N08
IXTH75N08
IXTM75N08
MTE75N08
VN0109N9
BS170F
VN0109N3
VN0109N2
IRF0120
VN0109N5
VN99AK
IRF012
IRF0122
VN98AK
svn98ak
VN-99-A
VN98AJ
k604
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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BSP87
Abstract: bsp296 l BSS125 bss149 to92d
Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135
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BS107
BS170
BSS88
BSS89
BSS91
BSS92
BSS98
BSS100
BSS124
BSS125
BSP87
bsp296 l
bss149
to92d
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siemens bss100
Abstract: BSS100 BSS100 TO-92 BSS100 Siemens
Text: SIEMENS BSS 100 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 .8 .2 .0 V Type (O £ BSS 100 100 V Type BSS 100 BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 b
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Q62702-S483
Q62702-S499
Q62702-S007
Q67000-S206
E6288
E6296
E6325
BSS100
siemens bss100
BSS100
BSS100 TO-92
BSS100 Siemens
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Untitled
Abstract: No abstract text available
Text: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
BSS100
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Sot23 SL6
Abstract: BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSP17 BSP89 BSS129
Text: SIEMENS AKTIE NGE SELLSCHAF bOE D Ö235b05 0045424 77T « S I E G SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Maxim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP125 BSP129* BSP135* BSP149*
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6535b05
BSP17
OT223
BSP88
BSS88
BSP89
BSS89
BSP92
Sot23 SL6
BSS315
siemens sot223
BSP296N
BSS100
BSS125
BSP129
BSS129
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321 SOT
Abstract: DIP-6 bsp300 SOT23_215 BSS125
Text: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416
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OT-223
OT-23
BSSOT-223
OT-89
321 SOT
DIP-6
bsp300
SOT23_215
BSS125
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S498
Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e
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023SbOS
lSb37
Q62702-
BSS981'
BSS1381Â
OT-23
BSS3951Â
O-202
BSS100
BSS123
S498
BSS97
BSS95
BSS125
siemens 230 92
BSS 130
BSS 97
s484
S458
BSS components
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BSS87
Abstract: BSP315 SOT223 BSP171 BSS125
Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317
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BSP17
BSP88
BSP89
BSP92
BSP129*
BSP135*
BSP149*
BSP171
BSP295
BSP296
BSS87
BSP315 SOT223
BSS125
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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