BSS123
Abstract: BSS100 equivalent BSS100 bss100 transistor
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field
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BSS100
BSS123
BSS100:
BSS123:
BSS123
BSS100 equivalent
bss100 transistor
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BSS100
Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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BSS100
BSS123
BSS100:
BSS123:
transistor P1 P
bSS100 TRANSISTOR DATASHEET
bss100 transistor
BSS100 TO-92
F1 SOT23
BSS100 equivalent
BSS123
transistor bss123
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BSS100
Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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BSS100
BSS123
BSS100:
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bss123
CBVK741B019
F63TNR
PN2222N
BSS100 TO-92
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74hct00
Abstract: ST7226 ST72F344 microcontroller ST7 datasheet SETD 74FCT 74HCT AN1179 74HC40103 ST662A
Text: ST7 FAMILY ICC PROTOCOL REFERENCE MANUAL INTRODUCTION This document is an advanced technical reference manual. It has been written for engineers who want to build their own ST7 programming, testing or debugging tools using the In-Circuit Communication ICC protocol. This document does not target engineers who only use
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SP2083
Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF
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ST7 ICC Family
Abstract: 8251 programming application schematic diagram UPS inverter three phase 74HC40103 Logic Family Specifications 74hct00 pin configuration of 8251 ST72344 74hct74 DMC TOOLS microcontroller ST7 datasheet
Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL November 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF
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transistor 45 f 123
Abstract: No abstract text available
Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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BSS100
BSS123
BSS100:
BSS123:
BSS123
transistor 45 f 123
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TAG 92 transistor
Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
Text: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.
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00b7Bfl4
BSS100
7110flEb
Vdd-60V
7Z88773
TAG 92 transistor
philips transformer 524
BSS100
BSS100 TO92
BTB 134
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BSS123
Abstract: No abstract text available
Text: September 1996 F A IR C H IL D SEM IC ONDUCTO R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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BSS100
BSS123
BSS100:
BSS123:
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BSS123
Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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BSS100
BSS123
BSS100:
BSS123:
k501130
BSS123
bS0113D
85S100
TRANSISTOR BSS123
K5011
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BSS123
Abstract: BSS100 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
Text: i |_ | I q Septem ber 1996 S E M IC O N D U C T O R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
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BSS100
BSS123
BSS100:
BSS123:
BSS123
transistor BJ 017
bss100 transistor
BSS100 TO92
BS8123
BSS100 TO-92
BSS10
bss123 transistor
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bss100 transistor
Abstract: BSS100 PINNING-TO-92 JZSS773
Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL
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BSS100
PINNING-TO-92
JZSS773
003bl57
LL53S31
003bl2fi
bss100 transistor
BSS100
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.
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BSS100
003bl2b
0Q3bl37
D03fcil2fl
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Untitled
Abstract: No abstract text available
Text: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
BSS100
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Untitled
Abstract: No abstract text available
Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
S35bQ5
Q133777
SQT-89
B535bQ5
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1M4148
Abstract: 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093
Text: /T T SGS-THOMSON * 7# . [ f f lD S S & IC T M S O g i TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION The bridge-leg is an important building block for many applications such as drives and switch-mode
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00V/DIV
1M4148
1N41448
1M4148 diode
BC327 circuit example
12-0-12 1A transformer
Transistor BC327 Q1
12-0-12 transformer design
12-0-12 transformer used 12v dc supply
BC337 circuit example
HCF4093
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S498
Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e
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023SbOS
lSb37
Q62702-
BSS981'
BSS1381Â
OT-23
BSS3951Â
O-202
BSS100
BSS123
S498
BSS97
BSS95
BSS125
siemens 230 92
BSS 130
BSS 97
s484
S458
BSS components
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BZX85C15V
Abstract: 1N41448 p477 1M4148 p 477 mosfet discrete totem pole CIRCUIT hcf4093 TYPICAL APPLICATION
Text: rz7 SGS-THOMSON ^ 7 Mrn ^D K©[l[Li©¥[^ Q R!]0©§ TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION Fig. 1 - B ridge configurations The bridge-leg is an im portant building block for many applications such as drives and switch-mode
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00V/DIV
BZX85C15V
1N41448
p477
1M4148
p 477
mosfet discrete totem pole CIRCUIT
hcf4093 TYPICAL APPLICATION
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BF247A
Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150
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BS170
BS208
BF904
BF904R
BF904WR
BS250
BC264D
BF908
BSD12
BF245A
BF247A
bs250 bs170
PMBFJ111
PMBFJ174
BSR56
BFT46
PHC21025
BF909WR
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321 SOT
Abstract: DIP-6 bsp300 SOT23_215 BSS125
Text: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416
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OT-223
OT-23
BSSOT-223
OT-89
321 SOT
DIP-6
bsp300
SOT23_215
BSS125
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BST78
Abstract: bsn204 bsn254 BSN20 to92 BSD254 sot89 15e
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL VERTICAL D-MOSFETS ratings type number typ. mS typ. (PF) c rs typ. (PF) package (Í2) characteristics t 3> ton2> typ. typ.
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15000s
BST86
PMBF107
PMBF170
2N7002
BST78
bsn204
bsn254
BSN20 to92
BSD254
sot89 15e
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philips bsd215
Abstract: BST110 BF909WR
Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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BC264A
BC264B
BC264C
BC264D
BF245A
BST120
BST122
PHP112
PHP125
PHC2102501
philips bsd215
BST110
BF909WR
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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KF520
Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5
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15Blatnà
KF520
KT725
diac kr 206
KT707
KD502
kt201
KT206-200
KU607
KYS 30 40 diode
KT784
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