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    onsemi BSS123L

    MOSFET N-CH 100V 170MA SOT23-3
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    DigiKey BSS123L Reel 90,000 3,000
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    Avnet Americas BSS123L Reel 111,000 18 Weeks 3,000
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    BSS123L Ammo Pack 25 Weeks, 4 Days 1
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    BSS123L Reel 18 Weeks 27,000
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    Mouser Electronics BSS123L 726,855
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    Arrow Electronics BSS123L 105,000 18 Weeks 3,000
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    BSS123L 57,000 18 Weeks 3,000
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    BSS123L Cut Strips 22,255 18 Weeks 1
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    Newark BSS123L Cut Tape 14,075 1
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    BSS123L Reel 6,000 3,000
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    Future Electronics BSS123L Reel 741,000 13 Weeks 3,000
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    BSS123L Reel 156,000 13 Weeks 3,000
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    BSS123L Reel 111,000 18 Weeks 3,000
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    Bristol Electronics BSS123L 1,194
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    BSS123L 242
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    Quest Components BSS123L 1,091
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    BSS123L 955
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    TME BSS123L 6,305 1
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    Ameya Holding Limited BSS123L 106,067
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    Richardson RFPD BSS123L 24,000
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    Avnet Asia BSS123L 18 Weeks 24,000
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    EBV Elektronik BSS123L 21,000 20 Weeks 3,000
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    New Advantage Corporation BSS123L 18,000 1
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    onsemi BSS123LT1G

    MOSFET N-CH 100V 170MA SOT23-3
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    DigiKey BSS123LT1G Cut Tape 783 1
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    BSS123LT1G Digi-Reel 783 1
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    Avnet Americas BSS123LT1G Reel 30,000 20 Weeks 3,000
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    BSS123LT1G Ammo Pack 15 Weeks, 4 Days 1
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    BSS123LT1G Ammo Pack 5
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    BSS123LT1G Reel 20 Weeks 30,000
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    Mouser Electronics BSS123LT1G 328,897
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    Verical BSS123LT1G 300,000 3,000
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    Arrow Electronics BSS123LT1G 423,000 20 Weeks 3,000
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    BSS123LT1G 9,933 20 Weeks 1
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    Newark BSS123LT1G Cut Tape 215,498 1
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    BSS123LT1G Reel 15,000 3,000
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    BSS123LT1G Cut Tape 4 1
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    BSS123LT1G Reel 3,000
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    Bristol Electronics BSS123LT1G 16,104
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    BSS123LT1G 3,362 27
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    BSS123LT1G 306
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    Quest Components BSS123LT1G 10,528
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    BSS123LT1G 2,689
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    BSS123LT1G 24
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    TME BSS123LT1G 7,584 1
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    Ameya Holding Limited BSS123LT1G 51,557
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    NexGen Digital BSS123LT1G 1,654
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    Richardson RFPD BSS123LT1G 30,000
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    Avnet Asia BSS123LT1G 20 Weeks 30,000
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    Chip-Germany GmbH BSS123LT1G 1,064
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    Component Electronics, Inc BSS123LT1G 58
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    EBV Elektronik BSS123LT1G 22 Weeks 3,000
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    IBS Electronics BSS123LT1G 1,597 1,597
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    Master Electronics BSS123LT1G 300,000
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    New Advantage Corporation BSS123LT1G 98,944 1
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    Win Source Electronics BSS123LT1G 449,999
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    onsemi BSS123LT3

    MOSFET N-CH 100V 170MA SOT23-3
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    DigiKey BSS123LT3 Reel 10,000
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    onsemi BSS123LT1

    MOSFET N-CH 100V 170MA SOT23-3
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    BSS123LT1 11,015
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    BSS123LT1 8,198
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    BSS123LT1 7,640
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    BSS123LT1 5,265 17
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    Quest Components BSS123LT1 11,124
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    BSS123LT1 8,812
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    BSS123LT1 4,212
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    BSS123LT1 3,580
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    Ameya Holding Limited BSS123LT1 29,845
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    NexGen Digital BSS123LT1 3,000
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    Component Electronics, Inc BSS123LT1 2,452
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    onsemi BSS123LT3G

    MOSFET N-CH 100V 170MA SOT23-3
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    DigiKey BSS123LT3G Reel 10,000
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    BSS123L Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS123L On Semiconductor TMOS FET Transistor Original PDF
    BSS123L6327 Infineon Technologies Transistor Mosfet N-CH 100V 0.17A 3 pin SOT-23 T/R Original PDF
    BSS123L6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 170MA SOT-23 Original PDF
    BSS123L6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 170MA SOT-23 Original PDF
    BSS123L6433 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 170MA SOT-23 Original PDF
    BSS123L6433HTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 170MA SOT-23 Original PDF
    BSS123L7874XT Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 170MA SOT-23 Original PDF
    BSS123/LF1R Nexperia USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 150MA TO236AB Original PDF
    BSS123LT1 Motorola TMOS FET Transistor(N-Channel) Original PDF
    BSS123LT1 On Semiconductor BSS123 - TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN, FET General Purpose Small Signal Original PDF
    BSS123LT1 On Semiconductor Power MOSFET 170 mA, 100 V Original PDF
    BSS123LT1 On Semiconductor TMOS FET Transistor Original PDF
    BSS123LT1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSS123LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS FET, N Channel, 100mA, 100V, Pkg Style SOT23 Scan PDF
    BSS123LT1/D On Semiconductor CASE 318-08, STYLE 21 SOT-23 (TO-36AB) Original PDF
    BSS123LT1D On Semiconductor Power MOSFET 170 mAmps, 100 Volts Original PDF
    BSS123LT1-D On Semiconductor Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Original PDF
    BSS123LT1G On Semiconductor BSS123 - TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, CASE 318-08, 3 PIN, FET General Purpose Small Signal Original PDF
    BSS123LT1G On Semiconductor TMOS FET Transistor Original PDF
    BSS123LT3 On Semiconductor Power MOSFET 170 mA, 100 V Original PDF

    BSS123L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS123LT1G

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original
    PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D BSS123LT1G

    marking code SA sot-23

    Abstract: SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs VGS VGSM ± 20 ± 40 Vdc


    Original
    PDF BSS123LT1 OT-23 marking code SA sot-23 SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v

    BSS123LT1G

    Abstract: BSS123LT1 BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


    Original
    PDF BSS123LT1 OT-23 BSS123LT1/D BSS123LT1G BSS123LT1 BSS123LT3 BSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101


    Original
    PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BSS123LT1/D

    sot-23 mosfet Marking SA s

    Abstract: BSS123LT1G marking SA sot-23 BSS123LT1 BSS123LT3 BSS123LT3G sot-23 mosfet Marking ak
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage


    Original
    PDF BSS123LT1 OT-23 BSS123LT1/D sot-23 mosfet Marking SA s BSS123LT1G marking SA sot-23 BSS123LT1 BSS123LT3 BSS123LT3G sot-23 mosfet Marking ak

    sot-23 mosfet Marking SA s

    Abstract: BSS123LT1 BSS123LT3
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs VGS VGSM ±20 ±40 Vdc


    Original
    PDF BSS123LT1 r14525 BSS123LT1/D sot-23 mosfet Marking SA s BSS123LT1 BSS123LT3

    BSS123LT1

    Abstract: BSS123LT1G BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage


    Original
    PDF BSS123LT1 OT-23 BSS123LT1/D BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original
    PDF BSS123LT1G, BVSS123LT1G BSS123LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


    Original
    PDF BSS123LT1 OT-23 BSS123LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101


    Original
    PDF BSS123LT1G, BVSS123LT1G BSS123LT1/D

    BSS123LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage


    Original
    PDF BSS123LT1/D BSS123LT1 236AB) BSS123LT1

    BC237

    Abstract: 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


    Original
    PDF BSS123LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2N3819 junction fet

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original
    PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D

    DNP resistors

    Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE
    Text: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107


    Original
    PDF ISL8107EVAL2Z AN1459 ISL8107 ISL8107 com/data/fn/fn6605 ISL8107EVAL2Z DNP resistors V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

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    Abstract: No abstract text available
    Text: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq


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    PDF BSS123LT1* OT-23 O-236AB)

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    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h an n el 3 DRAIN Motorola Preferred Device % 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc G ate-Source Voltage — Continuous — N on-repetitive tp < 50 ^s


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    PDF BSS123LT1 OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor BSS123LT1 N-Channel 3 DRAIN Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-Source Voltage V d SS 100 Vdc G ate-Source Voltage


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    PDF BSS123LT1/D BSS123LT1 OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |is


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    PDF BSS123LT1 -236A b3b72S5

    JSs sot23

    Abstract: No abstract text available
    Text: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)


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    PDF BSS123LT1* OT-23 O-236AB) 2N7000 JSs sot23

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211