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Nexperia BSS138P,215 MOSFETs 60 V, 320 mA dual N-channel Trench MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSS138P,215		1,887,823			1 $0.13 10 $0.084 100 $0.051 1000 $0.044 10000 $0.022	Buy Now
onsemi BSS138L MOSFETs Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5ohm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSS138L		1,034,097			1 $0.18 10 $0.124 100 $0.073 1000 $0.057 10000 $0.034	Buy Now
onsemi BSS138LT3G MOSFETs 50V 200mA N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSS138LT3G		729,748			1 $0.22 10 $0.087 100 $0.054 1000 $0.048 10000 $0.039	Buy Now
ROHM Semiconductor BSS138BKT116 MOSFETs SOT23 N CHAN 60V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSS138BKT116		23,279			1 $0.42 10 $0.263 100 $0.167 1000 $0.099 10000 $0.072	Buy Now
Nexperia BSS138AKW-QX MOSFETs 60 V, 360 mA N-channel Trench MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSS138AKW-QX		20,725			1 $0.21 10 $0.126 100 $0.06 1000 $0.051 10000 $0.03	Buy Now

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BSS138 SS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance	Original	BSS138	PDF
BSS138TA Abstract: No abstract text available Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA	Original	BSS138 200mA 100mA 522-BSS138TA BSS138TA BSS138TA	PDF
BSS138 Abstract: BSS138 50V Zetex bss138 Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA	Original	BSS138 200mA BSS138 BSS138 50V Zetex bss138	PDF
bss138 Abstract: bss138 50 Text: P A IR C H II- D MICDNDUCTQ R May 1995 tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products	OCR Scan	BSS138 SS138 bss138 50	PDF
PHILIPS DMOS FET Abstract: No abstract text available Text: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223	OCR Scan	BSS138 OT223 MB8160 bbS3T31 PHILIPS DMOS FET	PDF
BSS138 Abstract: No abstract text available Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA	Original	BSS138 200mA AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS35479 BSS138	PDF
BSS138-7 Abstract: BSS138 transistor bss138 bss138 MARKING Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance	Original	BSS138 OT-23 BSS138-7 BSS138 transistor bss138 bss138 MARKING	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)	Original	OT-23 BSS138 OT-23 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)	Original	OT-23 BSS138 OT-23 500mA	PDF
transistor bss138 Abstract: bss138 bss138 MARKING BSS138 SS Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance	Original	BSS138 OT-23 transistor bss138 bss138 bss138 MARKING BSS138 SS	PDF
mosfet low vgs Abstract: Marking code SS Text: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)	Original	BSS138 220mA O-236AB OT-23) OT-23 220mA 290mA, 440mA, mosfet low vgs Marking code SS	PDF
Untitled Abstract: No abstract text available Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω	Original	BSS138 100mA 500mA 200mA 2002/95/EC OT-23 2010-REV	PDF
bss138 Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92 Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA	Original	BSS138 200mA AEC-Q101 OT-23 J-STD-020 MIL-STD-202, OT-23 DS35479 bss138 bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92	PDF
SmD TRANSISTOR a77 Abstract: smd marking code SSs Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138	OCR Scan	BSS138 OT-23 Q67000-S566 Q67000-S216 E6327 E6433 fopu22 S35bQ5 Q133777 SQT-89 SmD TRANSISTOR a77 smd marking code SSs	PDF

Untitled Abstract: No abstract text available Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology	Original	BSS138 OT-23 500mA 100mA 200mA 2002/95/EC 200mA 500mA 2010-REV	PDF
Untitled Abstract: No abstract text available Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.	Original	BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40	PDF
Untitled Abstract: No abstract text available Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology	Original	BSS138 500mA 100mA OT-23 200mA 2002/95/EC IEC61249 2010-REV	PDF
"MARKING CODE SS" Abstract: marking code SS BSS138 Text: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE FET T Top View N E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)	Original	BSS138 O-236AB OT-23) 220mA OT-23 290mA, 440mA, "MARKING CODE SS" marking code SS BSS138	PDF
PQ19-1 Abstract: SSM34 quanta quanta battery FDS6679 MAX1873 DTC144EU PR139 AO3402 quanta computer Text: 1 2 3 4 5 6 7 8 1 4 CCSN 4 CCSP A VIN_P PC1 0.1U/50V/X7R CH41006KA12 PC2 0.1U/50V/X7R CH41006KA12 PL1 60/3A CX1PG600001 2 1 2 1 A PC4 0.1U/50V/X7R CH41006KA12 3 2 1873 1873 PQ4 BSS138 BAM01380Z04 PC64 0.047U 3 1 CCI 1 4 PR147 22K CS32203J908 11 BATT 10 REF	Original	1U/50V/X7R CH41006KA12 1772VIN CS-4703J909 60/3A PQ19-1 SSM34 quanta quanta battery FDS6679 MAX1873 DTC144EU PR139 AO3402 quanta computer	PDF
marking code ss Abstract: No abstract text available Text: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE ET T Top View NF E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA TM .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)	Original	BSS138 O-236AB OT-23) 220mA OT-23 220mA 290mA, 440mA, marking code ss	PDF
N mosfet sot-23 marking ND Abstract: marking code ss Text: <iX G e n e r a l v _ BSS138 S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET ? t il* 1 TO-236AB SOT-23) •122(3.1) .110 2.8 LowVGS(th) V d s 50V R d S(ON)3.5Q I d 220mA ' .016(0.4) 1m *. 0.031 (0.8) H h Top View T 035 (0.9) ~T	OCR Scan	BSS138 220mA O-236AB OT-23) OT-23 290mA, 440mA, N mosfet sot-23 marking ND marking code ss	PDF
Untitled Abstract: No abstract text available Text: SOT23 N-CHANNEL EN H AN CEM EN T M O D E VERTICAL D M O S FET BSS138 IS S U E 3 - M A R C H 1996_ O_ P A R T M A R K IN G D E T A IL -S S ' I t ” SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Drain-Source Voltage Vos 50	OCR Scan	BSS138 Tamtp25 100mA	PDF
BSS138 Abstract: No abstract text available Text: S E M I C O N D U C T O R tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -C h a n n e l e n h a n c e m e n t m o d e field effect transistors a re produced using Fairchild's proprietary, high cell density, D M O S technology. T h e s e products	OCR Scan	BSS138 OT-23	PDF
LM78L05acza Abstract: D0805 C11B E97S ZMR500 122tp1 DL4002MSCT db9f BAV99 BSS138 Text: 1 2 H1:2 GND STAT 3 H1:3 OUT 4 H1:4 BG 5 H1:5 OBJ 6 H1:6 4.7uF/25V P5:1 SDA 2 CS 3 SCK 4 OBJ 5 P5:3 0.1uF VCC BG CONN6M P5:2 VCC 22uF/6.3V 1 TP6 TP7 TP8 C5 K P5:4 A OBJ RS1 V D D 0805 Q2 CHG BSS138 7 1 5 9 3 XT1 XT2 G 1 VO 1 3 E C S C12 7 0805 C14 14 7 13	Original	7uF/25V 22uF/6 BSS138 MAX232 OPA2340EA QT9701S TC7W02F BAV99 RS-232C LM78L05acza D0805 C11B E97S ZMR500 122tp1 DL4002MSCT db9f BAV99 BSS138	PDF

BSS138 SS Search Results

BSS138 SS Price and Stock

Nexperia BSS138P,215

onsemi BSS138L

onsemi BSS138LT3G

ROHM Semiconductor BSS138BKT116

Nexperia BSS138AKW-QX

BSS138 SS Datasheets Context Search

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BSS138TA

BSS138

bss138

PHILIPS DMOS FET

BSS138

BSS138-7

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transistor bss138

mosfet low vgs

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bss138

SmD TRANSISTOR a77

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"MARKING CODE SS"

PQ19-1

marking code ss

N mosfet sot-23 marking ND

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BSS138

LM78L05acza