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    onsemi BSS138-G

    FET 50V 3.5 OHM SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSS138-G Cut Tape 14,996 1
    • 1 $0.36
    • 10 $0.241
    • 100 $0.1255
    • 1000 $0.12536
    • 10000 $0.12536
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    BSS138-G Digi-Reel 14,996 1
    • 1 $0.36
    • 10 $0.241
    • 100 $0.1255
    • 1000 $0.12536
    • 10000 $0.12536
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    BSS138-G Reel 12,000 3,000
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    • 10 -
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    • 10000 $0.0765
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    Mouser Electronics BSS138-G 1,217,963
    • 1 $0.35
    • 10 $0.236
    • 100 $0.117
    • 1000 $0.107
    • 10000 $0.075
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    Verical BSS138-G 57,000 3,000
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    • 10000 $0.0975
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    Newark BSS138-G Bulk 3,000
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    • 10000 $0.093
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    Onlinecomponents.com BSS138-G 57,000
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    • 10000 $0.075
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    Bristol Electronics BSS138-G 5,348
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    BSS138-G 182 20
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    • 100 $0.1313
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    • 10000 $0.1313
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    Quest Components BSS138-G 145
    • 1 $0.35
    • 10 $0.35
    • 100 $0.105
    • 1000 $0.105
    • 10000 $0.105
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    Rochester Electronics BSS138-G 50 1
    • 1 $0.0832
    • 10 $0.0832
    • 100 $0.0782
    • 1000 $0.0707
    • 10000 $0.0707
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    Richardson RFPD BSS138-G 9,000
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    • 10000 $0.07
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    Avnet Silica BSS138-G 3,000 9 Weeks 3,000
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    EBV Elektronik BSS138-G 10 Weeks 3,000
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    Flip Electronics BSS138-G 27,564
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    Master Electronics BSS138-G 57,000
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    • 10000 $0.075
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    New Advantage Corporation BSS138-G 6,000 1
    • 1 -
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    • 10000 $0.0816
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    onsemi BSS138_G

    Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS138-G)
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    Avnet Americas BSS138_G Reel 8 Weeks 12,000
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    Avnet Asia BSS138_G 8 Weeks 12,000
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    Comchip Technology Corporation Ltd BSS138-G

    MOSFETs 50V 0.22A SOT-23
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    Mouser Electronics BSS138-G 43,618
    • 1 $0.35
    • 10 $0.237
    • 100 $0.15
    • 1000 $0.067
    • 10000 $0.044
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    Verical BSS138-G 33,000 3,000
    • 1 -
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    • 10000 $0.0684
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    Karl Kruse GmbH & Co KG BSS138-G 21,000
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    NAC BSS138-G 33,000 1
    • 1 -
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    • 10000 $0.04
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    Chip 1 Exchange BSS138-G 21,000
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    Others BSS138-G

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    PUI BSS138-G 21,000
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    Others BSS138_G

    INSTOCK
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    Chip 1 Exchange BSS138_G 738
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    Find more BSS138G price and stock on Findchips.com

    BSS138G Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BSS138 Preliminary Power MOSFET N -CH AN N EL LOGI C LEV EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138L-AE2-R QW-R502-271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40 PDF

    BSS138G

    Abstract: BSS138 TO236 BSS138
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		BSS138 OT-23-3 O-236) BSS138G-AE2-R QW-R502-271 BSS138G BSS138 TO236 BSS138 PDF

    BSS138 TO236

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 OT-23-3 O-236) OT-23-3 QW-R502-271 BSS138 TO236 PDF

    BSS138G-AE3-R

    Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138L BSS138G BSS138-AE3-R BSS138L-AE3-R QW-R502-271 BSS138G-AE3-R BSS138_G BSS138G BSS138L BSS138 BSS13 PDF

    BSS138G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 OT-23-3 OT-323 QW-R502-271 BSS138G PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		BSS138 BSS138G-AE2-R BSS138G-AL3-R QW-R502-271 PDF