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    BST N 44 80 Price and Stock

    Vishay Intertechnologies PTN0805E4480BST1

    Thin Film Resistors - SMD PTN0805 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E4480BST1
    • 1 $0.76
    • 10 $0.538
    • 100 $0.365
    • 1000 $0.228
    • 10000 $0.228
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    Vishay Intertechnologies PTN0805E3442BST0

    Thin Film Resistors - SMD PTN0805 25PPM 34.4K 0.1% S T0 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E3442BST0
    • 1 $0.75
    • 10 $0.537
    • 100 $0.364
    • 1000 $0.236
    • 10000 $0.218
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    Vishay Intertechnologies PTN0805E4422BSTP

    Vishay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E4422BSTP
    • 1 $8.03
    • 10 $7.26
    • 100 $5.4
    • 1000 $3.89
    • 10000 $3.83
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    Vishay Intertechnologies PTN0603E4480BST1

    Thin Film Resistors - SMD PTN0603 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0603E4480BST1
    • 1 $0.7
    • 10 $0.507
    • 100 $0.343
    • 1000 $0.223
    • 10000 $0.206
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    Vishay Intertechnologies PTN0402E4480BST1

    Thin Film Resistors - SMD PTN0402 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0402E4480BST1
    • 1 $0.7
    • 10 $0.507
    • 100 $0.343
    • 1000 $0.223
    • 10000 $0.206
    		Get Quote
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    BST N 44 80 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSTN4480IS9 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BSTN4480K Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    BST N 44 80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC59WM815BFT

    Abstract: TC59WM803BFT TC59WM807BFT Selex
    Text: TC59WM815/07/03BFT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		TC59WM815/07/03BFT-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59WM815BFT TC59WM807BFT TC59WM803BFT Selex PDF

    Q67100-Q1192

    Abstract: WL3 MARKING BST60
    Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


    Original     		HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 Q67100-Q1192 WL3 MARKING BST60 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11056-1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		DS05-11056-1E MB81F161622C-60/-70/-80/-80L 288-Word MB81F161622C 16-bit D-63303 F9910 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		MB81F161622C-60/-70/-80/-80L 288-Word MB81F161622C 16-bit PDF

    MB81F643242B-70

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11051-1E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory


    Original     		DS05-11051-1E /-80/-10/-70L/-80L/-10L/-70LL/-80LL/-10LL 288-Word MB81F643242B 32-bit MB81F643242B-70 PDF

    Fujitsu APD

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1 Draft ADVANCE INFO. MEMORY CMOS 4 x 2M × 16 BIT DOUBLE DATA RATE SDRAM MB81PL121647-75/-80/-10 CMOS 4-BANK 2,097,152-WORD × 16 BIT Synchronous Dynamic Random Access Memory with Double Data Rate n DESCRIPTION The Fujitsu MB81PL121647 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing


    Original     		MB81PL121647-75/-80/-10 152-WORD MB81PL121647 16-bit F9903 Fujitsu APD PDF

    F9901

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F9901 PDF

    variable resistor 2.2k

    Abstract: fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 TA2123AF DRV_B curent sensor
    Text: TA2123AF TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AF 1.5V Stereo Headphone Amplifier The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /


    Original     		TA2123AF TA2123AF variable resistor 2.2k fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 DRV_B curent sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: LM5007EP Enhanced Plastic High Voltage 80V Step Down Switching Regulator General Description Features The LM5007EP Step Down Switching Regulator features all of the functions needed to implement low cost, efficient, Buck bias regulators. This high voltage regulator contains an


    Original     		LM5007EP PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


    Original     		DS05-12102-3E MB81G163222-70/-80/-10 144-Word MB81G163222 32-bit D-63303 F9802 PDF

    DS05-12102-3E

    Abstract: mb81g163222-80
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


    Original     		DS05-12102-3E MB81G163222-70/-80/-10 144-Word MB81G163222 32-bit DS05-12102-3E mb81g163222-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-4E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32-Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


    Original     		DS05-12102-4E MB81G163222-70/-80/-10 144-Word 32-Bit MB81G163222 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-4E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32-Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


    Original     		DS05-12102-4E MB81G163222-70/-80/-10 144-Word 32-Bit MB81G163222 32-bit PDF

    wurth inductor

    Abstract: pdcr 318 adp1870 CEP125U-R80 744325072 a 1712 mosfet
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB GND CVREG2 COUT Q2 SW VREG DRVL PGND RRES LOAD 100 VIN = 5V PSM 95 90 75 EFFICIENCY (%) 80 VIN = 16.5V 70 65 VIN = 13V 60 VIN = 13V (PSM)


    Original     		ADP1870/ADP1871 ADP1871 10-lead RM-10 CP-10-9 wurth inductor pdcr 318 adp1870 CEP125U-R80 744325072 a 1712 mosfet PDF

    Hitachi DSA002745

    Abstract: No abstract text available
    Text: HM5241605C Series 4M LVTTL interface SDRAM 128-kword x 16-bit 83 MHz/80 MHz/66 MHz/57 MHz ADE-203-381C (Z) Rev. 3.0 Nov. 11, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.


    Original     		HM5241605C 128-kword 16-bit) Hz/80 Hz/66 Hz/57 ADE-203-381C Hitachi DSA002745 PDF

    SIEMENS BST h 05 90

    Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


    OCR Scan     		16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05) F50005S-2C-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET A E 5E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit ; Synchronous Dynamic Random Access Memiôiry DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AccessiMemory SDRAM containing


    OCR Scan     		MB81F161622B-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05) PDF

    F643242B

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		4x512 MB81F643242B -70/-80/-10/-70L/-80L/-1OL 288-Word 32-bit F643242B; F9904 F643242B PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.


    OCR Scan     		HM5221605 536-word 16-bit ADE-203-199A Hz/58 Hz/50 P7Z07 /77T7, 44TbED3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A D E - 2 0 3 - 1 8 6 A Z R e v . 1 .0 M ay. 22, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2


    OCR Scan     		HM5241605C 072-word 16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-886 (Z) Preliminary, Rev. 0.0 F eb .6,1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line


    OCR Scan     		HB52R168DB 16-Mword 64-bit, ADE-203-886 64-Mbit HM5264405TB) 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,


    OCR Scan     		HB526C264EN-10IN, HB526C464EN-10IN 576-word 64-bit ADE-203-737A HB526C264EN, HB526C464EN HB526C264EN PDF

    Untitled

    Abstract: No abstract text available
    Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is


    OCR Scan     		HB526C164EN 288-word 64-bit ADE-203-628A 16-Mbit HM5216165TT) 24C02) PDF