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    BU208 TRANSISTOR Search Results

    BU208 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU208 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1500V 20a

    Abstract: No abstract text available
    Text: BU208 BU208A w w w. c e n t r a l s e m i . c o m HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage NPN silicon power transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circuits


    Original     		PDF BU208 BU208A BU208, 100mA BU208A) 100mA, NPN Transistor 1500V 20a

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU207 BU208 TO 3 Metal Can Package HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BU207 BU208 C-120 Rev180302D

    BU208

    Abstract: transistor bu208 BU207
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU207 BU208 TO 3 Metal Can Package HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BU207 BU208 C-120 Rev180302D BU208 transistor bu208 BU207

    BU208

    Abstract: transistor bu208 BU208 C BU207
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU207 BU208 TO 3 Metal Can Package HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF QSC/L-000019 BU207 BU208 C-120 Rev180302D BU208 transistor bu208 BU208 C BU207

    transistor bu208

    Abstract: BU208 TRANSISTOR 1300
    Text: Silicon Power Transistor BU208 Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 5 Amp / 1300 V device in TO-204AA [ TO-3 ] package


    Original     		PDF BU208 O-204AA transistor bu208 BU208 TRANSISTOR 1300

    BU208

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BU208 Features • • • High voltage fast-switching NPN power transistors With TO-3 package Horizontal deflection for color TV NPN Silicon


    Original     		PDF BU208 BU208

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    BUW35

    Abstract: BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
    Text: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15


    Original     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BUW35 BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C

    BU208

    Abstract: ISOWATT218 BU208, ISOWATT218 BU208A CC41H U208 transistor bu208 A508A 508af BU208 C
    Text: S E M E L A B ÍM :i n > :L = ^ 3 5 e !- S o 3 BU208/508/508FI ! B U208A/508A/508AFI HORIZONTAL TVC DEFLECTION HIGH VOLTAGE HIGH POWER HIGH SW ITChING SPEED G O O D STABILITY CO NSUMER POW ER SUPPLY TV COLOR HORIZONTAL DEFLECTION DESCRIPTION The BU208/A, BU508/A and the BU5C8FI/AFI are


    OCR Scan     		PDF BU208/508/508FI BU208A/508A/508AFI ISOWATT218 BU208/A, BU508/A O-218 ISOWATT218 O-218/ISOWATT218) CC41H BU208/508/508F1-BU208 BU208 BU208, ISOWATT218 BU208A CC41H U208 transistor bu208 A508A 508af BU208 C

    MAX5208

    Abstract: BU207 200WN
    Text: BU207, BU208 IL BU207, 208 NPN POWER TRANSISTORS Horizontal Deflection Circuits in Colour TV Receiver Applications DIM A B C D E F G H J K L M MIN MAX 39.37 22,22 8,50 1.09 1.77 30,4 11, 18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29.90 10,69 5,20 16,64 11, 15


    OCR Scan     		PDF BU207, BU208 100mA; 300ps; MAX5208 BU207 200WN

    BU208

    Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
    Text: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection


    OCR Scan     		PDF BU207 BU208 BU208 14-MAXIMUM POT CORE 4229P-L00 transistor bu208 4229PL00-3C8

    BU508 TRANSISTOR equivalent

    Abstract: BU208 BU508 AFI TRANSISTOR equivalent transistor bu208 BU208A equivalent BU208 TRANSISTOR equivalent BU508 equivalent BU208, ISOWATT218 508AF bu208 transistor
    Text: 1 3 E IS 3 7 S ff 0 0 2 as 13 D_ • > 3 . - ' 3> SGS-THOMSON BU208/508/508FI idJOTMKS BU208A/508A/508AFI S G S-TH0MS0N 3ÜE D HORIZONTAL TVC DEFLECTION a ■ ■ ■ ■ ■ ■ HIGH VOLTAGE HIGH POWER HIGH SWITCHING SPEED GOOD STABILITY CONSUMER POWER SUPPLY


    OCR Scan     		PDF BU208/508/508FI BU208A/508A/508AFI BU208/A, BU508/A BU508FI/AFI O-218 ISOWATT218 GC-0343 BU508 TRANSISTOR equivalent BU208 BU508 AFI TRANSISTOR equivalent transistor bu208 BU208A equivalent BU208 TRANSISTOR equivalent BU508 equivalent BU208, ISOWATT218 508AF bu208 transistor

    BU508 TRANSISTOR equivalent

    Abstract: BU508 AFI TRANSISTOR equivalent BU208 BU208A equivalent TO3 HEATSINK BU208A
    Text: r rz ^7# SGS-THOMSON BU208/508/508FI Mû^o [i[LiOT «S BU208A/508A/508AFI HORIZONTAL TVC DEFLECTION • ■ ■ ■ ■ ■ ■ HIGH VOLTAGE HIGH POWER HIGH SW ITCHING SPEED GOOD STABILITY CONSUMER POWER SUPPLY TV COLOR HORIZONTAL DEFLECTION D E S C R IP T IO N


    OCR Scan     		PDF BU208/508/508FI BU208A/508A/508AFI BU208/A, BU508/A BU508FI/AFI O-218 ISOWATT218 O-218/ISOWATT218) BU208/508/508FI-BU208A/508A/508AFI BU508 TRANSISTOR equivalent BU508 AFI TRANSISTOR equivalent BU208 BU208A equivalent TO3 HEATSINK BU208A

    BU208

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEMICONDUCTOR 92D 00379 I^ S Ç ; „ -• • _i,-~ ¿ z ? » * : - r ' { '• fT DE I D 3J- o □ □ □ □ 3 7 CÌ *7 7 BU207 BU208 BU208A NPN SILICON POWER T RAN S I S T O R — ’?'j\ Centres! S^Kfieewciiiet !16@rp. Centres! S@itig€©n€lP€t@r C@rp.


    OCR Scan     		PDF BU207 BU208 BU208A BU207, BU208, 125TYP

    TOSHIBA 2N3055

    Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor ST100Q22 HF VHF power amplifier module transistor bf422 fet
    Text: 2.1 A Transistors C) EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2 SC 780 1st 2nd ST100Q22 3rd SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2.2 (Example) T ype 2SA PNP high-frequency use 2SB PNP low -frequency use


    OCR Scan     		PDF ST100Q22 2N3055 BF422 BU208 TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor HF VHF power amplifier module transistor bf422 fet

    5609 transistor

    Abstract: transistor 5609 5609 BU208 CCC16018 MJ16018
    Text: 6115950 M ICROSEMÌ CO R P/POWER 02E .OE 0 0 5 09 DE | b l l 5 T S 0 D 0 D0 0 S CH t f. 3 3 -13 CCC16018 TECHNOLOGY 10 A, 1500 V, NPN Power Transistor Chip •Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au


    OCR Scan     		PDF CCC16018 emitter-10-mil thickness-10 PTC16018/MJ16018 BU208 5609 transistor transistor 5609 5609 BU208 CCC16018 MJ16018

    2n3055 npn transistor toshiba

    Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
    Text: 2. Id e n tific a tio n System 2.1 A C) Transistors EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2SC 4289 A 1st 2nd 3rd ST100Q22 SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2SA PNP high-frequency use 2SB PNP low-frequency use


    OCR Scan     		PDF ST100Q22 2N3055 BF422 BU208 2n3055 npn transistor toshiba TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp

    MIL npn high voltage transistor 1000V

    Abstract: SDT802 NPN Transistor VCEO 1000V
    Text: «9 y) ir earn® Oevices. Inc. VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION Base an d emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel Silver” also av ailab le) Also av ailab le on:


    OCR Scan     		PDF 305mm) 200PF 200PF BU208. SDT723, SDT802, SDT18801 MIL npn high voltage transistor 1000V SDT802 NPN Transistor VCEO 1000V

    SOT123

    Abstract: SDT723 NPN Transistor VCEO 1000V BU208 NPN Transistor 600V SDT18801 SDT802
    Text: Cintron Devices. Inc IPtMDPQD ? ©ÂTTÂIL VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF 305mm) 200PF 68C/W 200PF BU208, SDT723, SDT802, SDT18801 SOT123 SDT723 NPN Transistor VCEO 1000V BU208 NPN Transistor 600V SDT18801 SDT802

    itron 16

    Abstract: SDT802
    Text: 8368602 SOL ITRON D E V I C E S INC =15 95 D 0 2 8 4 3 D F | fiB b flb 0 2 □ □ □ E fl4 3 D 7 ^ M © ^ ©ÄTTÄIL©© V E R Y HIGH VOLTAG E Devices, Inc. CHIP NUMBER N P N PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 305mm) BU208, SDT723, SDT802, SDT18801 itron 16 SDT802

    BDW51

    Abstract: buw34 BUW35 BDW52 BDX86C BU208 BUX47 BUX80 2N6674 2N6675
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP •c Pd (A) <W) MAX e ie hFE TYP BV c b O BV c e O (V) (V) MIN MIN MIN MAX (A) VCE(SA T) @*c fr *TYP M MAX (A) (MHZ) MIN 2N6674 15 175 350 300 8.0 20 . 5.0 15 15 2N6675 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 BDX86C BU208 BUX47 BUX80 2N6674 2N6675

    BUW36

    Abstract: bux11
    Text: Powar Transistors TO-3 Case Continued TYPE NO. ks m wm pm VC8Ö m MAX bvceo hFE *T¥t* • *c MMf 300 (A) MM MAX on (A) MAX 2N6674 15 175 350 2N6675 15 175 450 400 8.0 20 . 8.0 h *TYP w MM V C B 8A T > @«C (MHZ) MIN 20 . 5.0 15 15 5.0 15 15 BDW51


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDX85 BDX85C B0X87 BDX87A BUW36 bux11

    bu800

    Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503
    Text: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont


    OCR Scan     		PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 bu800 BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503