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    BU326A TRANSISTOR Search Results

    BU326A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU326A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU326A

    Abstract: BU326
    Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN


    Original     		PDF BU326A BU326A BU326

    BU326A

    Abstract: BU326
    Text: BU326A  HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: ■ POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN


    Original     		PDF BU326A BU326A BU326

    BU326A

    Abstract: BU326
    Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN


    Original     		PDF BU326A BU326A BU326

    BU326

    Abstract: BU326A
    Text: SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies.


    Original     		PDF BU326 BU326A BU326 BU326A

    NPN 800V

    Abstract: NPN VCEO 800V BU326A
    Text: NPN BU326A SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25 °C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF BU326A 80-Emitter NPN 800V NPN VCEO 800V BU326A

    NPN Transistor 1A 400V

    Abstract: BU326A BU326
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper


    Original     		PDF BU326A NPN Transistor 1A 400V BU326A BU326

    BU326A Transistor

    Abstract: No abstract text available
    Text: ., U na. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BU326A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: V C EO(sus)=400V(Min) • Low Collector-Emitter Saturation Voltage:V C E(sat)=1.5V(Max.)@lc=2.5A


    Original     		PDF BU326A BU326A Transistor

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    bu326

    Abstract: BU326A
    Text: BU326 BU326A SGSTHO M SON HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. ABSOLUTE M AXIM UM RATINGS Value


    OCR Scan     		PDF BU326 BU326A BU326A 326-BU326A

    Untitled

    Abstract: No abstract text available
    Text: SGS-mOMSON MOgn ia,ieiri®i0 Di BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN


    OCR Scan     		PDF BU326A BU326A 5CC8H20

    bu326a

    Abstract: bu326
    Text: 7^537 0056557 0 • *T" 3>~S-\3 SGS-THOMSON M tg[^ »[i(M i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply


    OCR Scan     		PDF BU326 BU326A BU326 BU326A 10Oii BU326-BU326A BU326-B U326A

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 DESCRIPTION


    OCR Scan     		PDF BU326A BU326A P003F

    lg crt tv circuit diagram

    Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
    Text: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326

    BU326

    Abstract: BU326A BU326-BU326A
    Text: INSTR -COPTO} DE 0 0 3 t , t , a cl S Ô961726 TEXAS INSTR ~<OPTO> 62C 36629 r - i s - v BU326,BU326A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 2 5 °C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


    OCR Scan     		PDF fliti75b 9e1726 BU326 BU326A BU326A 0d3fcjfci33 BU326, T-33-// BU326-BU326A

    BU326

    Abstract: 326a
    Text: BU326, BU326A >ÎL BU326, 326A NPN POWER TRANSISTORS Switching-Mode CTV Power Supply Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1.77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11.15 12,25 26,67 3.84 4,19 - PIN CONFIGURATION


    OCR Scan     		PDF BU326, BU326A 100mA; 300yis; BU326 326a

    BU326

    Abstract: BU326-BU326A 331Z BU326A st bux
    Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current


    OCR Scan     		PDF BU326, BU326A BU326 BU326-BU326A 331Z st bux

    IR 92 0151

    Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.


    OCR Scan     		PDF AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184

    bu800

    Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503
    Text: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont


    OCR Scan     		PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 bu800 BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503

    BU2080

    Abstract: No abstract text available
    Text: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9


    OCR Scan     		PDF 2SD1168P 2SD1168Q 2SD200 2SD83 BU326 BU326A BU608 CDN055 BU2080

    BU208D

    Abstract: BU208 BU208A 2SD870 BDY38 BOY20 BU2080 2SC1942 2SD1168 2SD1168P
    Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. V CBO VCEO V EBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) •c Po (W) (A) To=25°c ICBO V CB •c e s V CE (MA) Max 0 (V) (MA) Max (V) 10 e


    OCR Scan     		PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BU208D BU208 BU208A BDY38 BOY20 BU2080

    BDY38

    Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869
    Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES


    OCR Scan     		PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BDY38 BU606 2S0200

    BDY20

    Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
    Text: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB


    OCR Scan     		PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD870 2SD871 BU205 BU207 BU208 BDY20 BU208A BU608 2S01168 2S0200 BDY38 BU208