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    BU931Z POWER TRANSISTOR Search Results

    BU931Z POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU931Z POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bu931 equivalent

    Abstract: BU931G BU931Z HIGH VOLTAGE IGNITION COIL BU931-T3P-T ignition coil npn power darlington Transistors Bipolar NPN TO-3P BU931L-T3P-T NPN Darlington IC schematic NPN POWER DARLINGTON
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology „ INTERNAL SCHEMATIC DIAGRAM Lead-free: BU931L Halogen-free:BU931G


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    PDF BU931Z BU931L BU931G BU931-T3P-T BU931L-T3P-T BU931G-T3P-T QW-R214-015 bu931 equivalent BU931G BU931Z HIGH VOLTAGE IGNITION COIL BU931-T3P-T ignition coil npn power darlington Transistors Bipolar NPN TO-3P BU931L-T3P-T NPN Darlington IC schematic NPN POWER DARLINGTON

    BU931Z

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BU931Z Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in high performance electronic car ignition PINNING see Fig.2 PIN DESCRIPTION


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    PDF BU931Z 300mV BU931Z

    BU931Z

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology „ INTERNAL SCHEMATIC DIAGRAM 1 TO-3P „ ORDERING INFORMATION


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    PDF BU931Z BU931ZL-T3P-T BU931ZG-T3P-T QW-R214-015 BU931Z

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON  FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology  INTERNAL SCHEMATIC DIAGRAM  ORDERING INFORMATION


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    PDF BU931Z BU931ZL-TA3-T BU931ZG-TA3-T BU931ZL-T3P-T BU931ZG-T3P-T O-220 QW-R214-015

    BU931Z

    Abstract: COIL IGNITION BU931Z Power Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology „ INTERNAL SCHEMATIC DIAGRAM 1 TO-3P „ ORDERING INFORMATION


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    PDF BU931Z BU931ZL-T3P-T BU931ZG-T3P-T QW-R214-015 BU931Z COIL IGNITION BU931Z Power Transistor

    ignition coil npn power darlington

    Abstract: BU931-T3P-T BU931Z Transistors Bipolar NPN TO-3P BU931L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology 1 TO-3P INTERNAL SCHEMATIC DIAGRAM C 2 B (1) *Pb-free plating product number: BU931L


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    PDF BU931Z BU931L BU931-T3P-T BU931L-T3P-T QW-R214-015 ignition coil npn power darlington BU931-T3P-T BU931Z Transistors Bipolar NPN TO-3P BU931L-T3P-T

    Untitled

    Abstract: No abstract text available
    Text: BU931Z Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    PDF BU931Z

    BU931Z

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BU931Z Features • • With TO-3 package Applications in high performance electronic car ignition NPN Silicon Power Transistors Maximum Ratings


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    PDF BU931Z 100mAdc) 10Adc, 150mAdc) 250mAdc) BU931Z

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOMSON O û[H }iôm iIO T K S B U 9 3 1 Z /Z P /Z P F I NPN POWER DARLINGTON • HIGH RUGGEDNESS ■ INTEGRATED HIGH VOLTAGE ZENER AU TO M O TIVE MARKET ■ APPLICATION IN HIGH PERFORMANCE ELECTRONIC CAR IGNITION DESCRIPTIO N The BU931Z, BU931ZP and BU931ZPFI are silicon


    OCR Scan
    PDF BU931Z, BU931ZP BU931ZPFI OT-93 ISOWATT218