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    BUK9230-100B Search Results

    BUK9230-100B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    100B484S2-7Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100B484S4Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100B484S4-5Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100B484S8C Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100B484S4C Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
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    BUK9230-100B Price and Stock

    Nexperia BUK9230-100B,118

    MOSFET N-CH 100V 47A DPAK
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    DigiKey BUK9230-100B,118 Digi-Reel 1
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    BUK9230-100B,118 Cut Tape
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    NXP Semiconductors BUK9230-100B

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    Bristol Electronics BUK9230-100B 1,755
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    Nexperia BUK9230-100B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: .033 ohm; Terminal Finish: TIN;
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    Vyrian BUK9230-100B 470
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    BUK9230-100B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9230-100B NXP Semiconductors BUK9230-100B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 47 A; Qgd (typ): 13 nC; RDS(on): 28@10V30@5V33@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 100 V Original PDF
    BUK9230-100B Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9230-100B,118 NXP Semiconductors BUK9230 - TRANSISTOR 47 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, DPAK-3, FET General Purpose Power Original PDF
    BUK9230-100B,118 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 47 A; Qgd (typ): 13 nC; RDS(on): 28@10V30@5V33@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd Original PDF
    BUK9230-100B/T3 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 47 A; Qgd (typ): 13 nC; RDS(on): 28@10V30@5V33@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 100 V Original PDF