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    BUK9608 55B Search Results

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    BUK9608 55B Price and Stock

    Nexperia BUK9608-55B,118

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey BUK9608-55B,118 Cut Tape 800 1
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    BUK9608-55B,118 Digi-Reel 800 1
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    BUK9608-55B,118 Reel 800
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    Mouser Electronics BUK9608-55B,118 2,324
    • 1 $2.8
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    Newark BUK9608-55B,118 Cut Tape 3,479 1
    • 1 $2.27
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    Rochester Electronics BUK9608-55B,118 20,800 1
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    TTI BUK9608-55B,118 Reel 800
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    TME BUK9608-55B,118 1
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    Avnet Silica BUK9608-55B,118 800 54 Weeks 4,800
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    EBV Elektronik BUK9608-55B,118 1,600 54 Weeks 800
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    Nexperia BUK9608-55B118

    Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK9608-55B,118)
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    Avnet Americas BUK9608-55B118 Reel 4,800
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    Avnet Asia BUK9608-55B118 24,000 13 Weeks 4,800
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    Others BUK960855B

    AVAILABLE EU
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    ComSIT USA BUK960855B 5,400
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    NXP Semiconductors BUK9608-55B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 203 W; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 55 V;
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    Vyrian BUK9608-55B 278
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    BUK9608 55B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9608-55B NXP Semiconductors BUK9608-55B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V Original PDF
    BUK9608-55B Philips Semiconductors Trenchmos logic level FET Original PDF
    BUK9608-55B,118 NXP Semiconductors BUK9608-55 - TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power Original PDF
    BUK9608-55B,118 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd Original PDF
    BUK9608-55B/T3 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V Original PDF

    BUK9608 55B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK95

    Abstract: BUK9608-55B
    Text: BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55B BUK95 BUK9608-55B PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55B PDF