BUK9660-100A Search Results

BUK9660-100A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
100A474S10Y		Renesas Electronics Corporation	1K X 4 ECL I/O SRAM, CENT
100A474S4Y8		Renesas Electronics Corporation	1K X 4 ECL I/O SRAM, CENT
100A484S4-5Y		Renesas Electronics Corporation	4K X 4 ECL I/O SRAM
100A474S4-5Y8		Renesas Electronics Corporation	1K X 4 ECL I/O SRAM, CENT
100A474S8DF		Renesas Electronics Corporation	1K X 4 ECL I/O SRAM, CENT

BUK9660-100A Price and Stock

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Nexperia BUK9660-100A,118 MOSFET N-CH 100V 26A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9660-100A,118	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BUK9660-100A,118	Digi-Reel			1	1 $0.95 10 $0.95 100 $0.95 1000 $0.95 10000 $0.95	Buy Now
	BUK9660-100A,118	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BUK9660-100A118 Trans MOSFET N-CH 100V 26A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK9660-100A,118)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BUK9660-100A118	Reel			800	1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUK9660-100A Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUK9660-100A		NXP Semiconductors	BUK9660-100A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 26 A; Qgd (typ): 13 nC; RDS(on): 58@10V60@5V67@4.5V mOhm; Thermal Resistance: 1.4 K/W; VDSmax: 100 V		Original	PDF
BUK9660-100A		Philips Semiconductors	TrenchMOS logic level FET		Original	PDF
BUK9660-100A,118		NXP Semiconductors	TrenchMOS logic level FET - Configuration: Single N-channel ; I_D DC: 26 A; Q_gd (typ): 13 nC; R_DS(on): 58@10V60@5V67@4.5V mOhm; Thermal Resistance: 1.4 K/W; V_DSmax: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd		Original	PDF
BUK9660-100A,118		NXP Semiconductors	BUK9660 - TRANSISTOR 26 A, 100 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power		Original	PDF
BUK9660-100A/T3		NXP Semiconductors	TrenchMOS logic level FET - Configuration: Single N-channel ; I_D DC: 26 A; Q_gd (typ): 13 nC; R_DS(on): 58@10V60@5V67@4.5V mOhm; Thermal Resistance: 1.4 K/W; V_DSmax: 100 V		Original	PDF