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    BUK9E06-55A Search Results

    BUK9E06-55A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2265H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak Visit Renesas Electronics Corporation
    HAT2165H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0453DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 40V 55A 2.3Mohm Lfpak Visit Renesas Electronics Corporation
    RJK60S8DPK-M0#T0 Renesas Electronics Corporation 600V - 55A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    H5N2515P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 55A 44Mohm To-3P Visit Renesas Electronics Corporation
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    BUK9E06-55A Price and Stock

    Nexperia BUK9E06-55A,127

    MOSFET N-CH 55V 75A I2PAK
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    DigiKey BUK9E06-55A,127 Tube
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    Nexperia BUK9E06-55A

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 616 A; Maximum Drain-Source On Resistance: .0067 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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    Vyrian BUK9E06-55A 267
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    BUK9E06-55A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9E06-55A NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9E06-55A Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9E06-55A,127 NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack Original PDF
    BUK9E06-55A,127 NXP Semiconductors BUK9E06-55A - N-channel TrenchMOS logic level FET, SOT226 Package, Standard Marking, Horizontal, Rail Pack Original PDF