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    BUL54A Search Results

    BUL54A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUL54A Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUL54AFI Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A-SM Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54ASMD Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A-TO5 Semelab Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package Original PDF

    BUL54A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUL54AFI

    Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA BUL54AFI transistor 500v 0.5a NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA

    BUL54ASMD

    Abstract: NPN Transistor VCEO 1000V
    Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF BUL54ASMD 100mA 10MHz 300ms BUL54ASMD NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA

    TO5 package

    Abstract: BUL54A-TO5
    Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BUL54A-TO5 O205AA) 20-Aug-02 TO5 package BUL54A-TO5

    NPN Transistor VCEO 1000V

    Abstract: No abstract text available
    Text: SEME BUL54A-T257F LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.50 4.81 10.40 10.80 3.50 Dia. 3.70 Designed for use in electronic ballast applications 10.50 10.67 16.30 16.70 3.0


    Original     		PDF BUL54A-T257F 100mA 300ms NPN Transistor VCEO 1000V

    BUL54A

    Abstract: NPN Transistor VCEO 1000V
    Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector


    Original     		PDF BUL54A 500mA 100mA 10MHz NPN Transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: BUL54A-TO5
    Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)


    Original     		PDF BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    NPN Transistor VCEO 1000V

    Abstract: BUL54A transistor 500v 0.5a
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA NPN Transistor VCEO 1000V BUL54A transistor 500v 0.5a

    Untitled

    Abstract: No abstract text available
    Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF BUL54ASMD 100mA 10MHz 300ms

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    BUL54AR

    Abstract: BUL54 20MHZ npn 500v BUL54A-T257
    Text: Search Results Part number search for devices beginning "BUL54" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL54A NPN TO220 500V 4A 12 - 5/0.5 20MHz


    Original     		PDF BUL54" BUL54A BUL54AFI BUL54AR BUL54ASMD BUL54A-T126R BUL54A-T257 BUL54A-TO126 BUL54A-TO5 BUL54B BUL54 20MHZ npn 500v

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Untitled

    Abstract: No abstract text available
    Text: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5


    OCR Scan     		PDF BUL54A-SM T0220 100mA 10MHz

    MIL npn high voltage transistor 1000V

    Abstract: No abstract text available
    Text: Illl = lt = Illl SEME BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 'SEMEFAB DESIGNED AND DIFFUSED DIE :-► r4- •HIGH VOLTAGE 2.0 3.5 ► < 3.5 • FAST SWITCHING tf = 40ns


    OCR Scan     		PDF BUL54A-SM T0220 MIL npn high voltage transistor 1000V

    Semefab

    Abstract: MIL npn high voltage transistor 1000V
    Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL54A T0220 100mA Semefab MIL npn high voltage transistor 1000V

    Untitled

    Abstract: No abstract text available
    Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE


    OCR Scan     		PDF BUL54AFI 100mA

    T0251

    Abstract: T0-251
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A


    OCR Scan     		PDF BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


    OCR Scan     		PDF BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


    OCR Scan     		PDF BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342

    transistor s07

    Abstract: G-377 BUL55A BUL55B G177 G277A G377A G577A G677A G877A
    Text: Ö1331Ö7 G D G ü m ? 4flE » ISMLB 177 SEMEFABI SEMELAB G177 chip family •ss-07 The G177 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY for improved performance over full temperature


    OCR Scan     		PDF -90x90 -S50wm PA12x18mils G577A G677A G377A G277A G977A G877A G877DE transistor s07 G-377 BUL55A BUL55B G177

    bup43

    Abstract: No abstract text available
    Text: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25


    OCR Scan     		PDF BUL46A BUL46B BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B bup43