TO220 package infineon
Abstract: 311D SIGC16T120C BUP311D bup 311d
Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:
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SIGC16T120C
Q67041-A4673A003
7131-M,
TO220 package infineon
311D
SIGC16T120C
BUP311D
bup 311d
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Untitled
Abstract: No abstract text available
Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:
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SIGC16T120C
Q67041-A4673A003
7131-M,
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bup 311d
Abstract: bup212 igbt to220 311D SIGC16T120C
Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212
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SIGC16T120C
Q67041-A4673A003
7131-M,
bup 311d
bup212
igbt to220
311D
SIGC16T120C
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311D
Abstract: A003 SIGC16T120C bup212
Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212
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SIGC16T120C
Q67041-A4673sawn
7131-M,
311D
A003
SIGC16T120C
bup212
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BUP213
Abstract: A001 SIGC25T120C
Text: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V
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SIGC25T120C
C67078-A4674sawn
7141-M,
BUP213
A001
SIGC25T120C
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BUP 314
Abstract: SIGC42T120C
Text: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives
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SIGC42T120C
Q67041A4724-A001
7151-M,
BUP 314
SIGC42T120C
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BUP314
Abstract: bup 314 SIGC42T120C SIGC42T120CL 7151
Text: Preliminary SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CL VCE This chip is used for: • BUP 314 C Applications:
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SIGC42T120C
SIGC42T120CL
Q67041A4724-A001
7151-M,
BUP314
bup 314
SIGC42T120C
SIGC42T120CL
7151
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7151
Abstract: bup 314 BUP314
Text: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives
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SIGC42T120C
Q67041A4724-A001
7151-M,
7151
bup 314
BUP314
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BUP213
Abstract: SIGC25T120C SIGC25T120CL 280-400 BUP21
Text: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120CL VCE ICn 1200V
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SIGC25T120C
SIGC25T120CL
C67078-A4674A001
7141-M,
BUP213
SIGC25T120C
SIGC25T120CL
280-400
BUP21
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PDF
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Untitled
Abstract: No abstract text available
Text: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives
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SIGC42T120C
Q67041A4724-A001
7151-M,
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bup 314
Abstract: SIGC42T120C
Text: Preliminary SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications:
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SIGC42T120C
Q67041sawn
A4724-A001
7151-M,
bup 314
SIGC42T120C
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PDF
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BUP213
Abstract: SIGC25T120C
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
7141-M,
BUP213
SIGC25T120C
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bup213
Abstract: BUP21
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
14ypes
7141-M,
bup213
BUP21
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PDF
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Untitled
Abstract: No abstract text available
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
7141-M,
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BUN DIODE
Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Text: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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CM30TF-12H
Amperes/600
BUN DIODE
BUP 304
600v 30a IGBT
BUP 300
CM30
bup 304 equivalent
bup 77
CM30TF-12H
H bridge 300v 30a
12A1000
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600v 30a IGBT
Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K
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CM30TF-24H
Amperes/1200
600v 30a IGBT
BUN DIODE
CIRCUIT DIAGRAM UPS
welding circuit diagram
CM30TF-24H
DIODE EVP 25
igbt 30A
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BUN DIODE
Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Text: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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CM20TF-24H
Amperes/1200
BUN DIODE
600v 20a IGBT
igbt 600v 20a
CM20TF-24H
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BUN DIODE
Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R
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CM50TF-12H
Amperes/600
20-25kHz)
BUN DIODE
DIODE EVP 28
CM50TF-12H
bup transistor
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thyristor Q 720 To220
Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic
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BUP314
Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for
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O-220
O-218
BUP314
BUP307
igbt types
siemens bup314
BUP401
BUZ334
BUZ MOSFET
MOSFET welding INVERTER
334 mosfet
flyback inverter welding
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125 kHz RFID amplification
Abstract: psk demodulation ISO13506 ISO14443 LQFP48 T6N71B si1464
Text: T6N71B TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6N71B RFID Radio Frequency tag Reader and Writer Interface LSI Features • RFID reader and writer interface LSI embedding analog and data processing · Receive signal demodulation circuit stabilized by a built-in
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T6N71B
T6N38/46/78)
ISO14443
ISO13506.
LQFP48
125 kHz RFID amplification
psk demodulation
ISO13506
ISO14443
LQFP48
T6N71B
si1464
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PDF
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Untitled
Abstract: No abstract text available
Text: T6N71 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6N71 RFID Radio Frequency tag Reader and Writer Interface LSI Features • RFID reader and writer interface LSI embedding analog and data processing • Receive signal demodulation circuit stabilized by a built-in
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T6N71
T6N38/46/78)
ISO14443
ISO13506.
QFP44
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BUN DIODE
Abstract: No abstract text available
Text: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module
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OCR Scan
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CM20TF-24H
Amperes/1200
BUN DIODE
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PDF
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BUP64
Abstract: BUP65
Text: 37E SEMELAB LTD D • B1331B7 000023E SEMELAB dec 3 i 198/ ^ BUP64 7 ' ^ 0 7 /tfOQ kUf BUP65 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS PIN 1 -G a te P IN 2-S o u rc e
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OCR Scan
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T-39-13
8UP64
BUP65
BUP64
Tc-28-c.
15CPC
BUP64
BUP65
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