Untitled
Abstract: No abstract text available
Text: CY8CMBR3002, CY8CMBR3102 CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 Datasheet CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description The CY8CMBR3xxx CapSense® Express™ controllers enable advanced, yet easy-to-implement, capacitive touch sensing user
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CY8CMBR3002,
CY8CMBR3102
CY8CMBR3106S,
CY8CMBR3108
CY8CMBR3110,
CY8CMBR3116
channe30
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Untitled
Abstract: No abstract text available
Text: CY8CMBR3002, CY8CMBR3102 PRELIMINARY CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 Datasheet CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description
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CY8CMBR3002,
CY8CMBR3102
CY8CMBR3106S,
CY8CMBR3108
CY8CMBR3110,
CY8CMBR3116
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PDF
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Untitled
Abstract: No abstract text available
Text: CY8CMBR3002, CY8CMBR3102 CY8CMBR3106S, CY8CMBR3108 CY8CMBR3110, CY8CMBR3116 PRELIMINARY CapSense Express Controllers With SmartSense™ Auto-tuning 16 Buttons, 2 Sliders, Proximity Sensors CapSense Express 16 Button Controller General Description The CY8CMBR3xxx CapSense® Express™ controllers enable advanced, yet easy-to-implement, capacitive touch sensing user
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Original
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CY8CMBR3002,
CY8CMBR3102
CY8CMBR3106S,
CY8CMBR3108
CY8CMBR3110,
CY8CMBR3116
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PDF
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hwin
Abstract: "FRC" sony 5.1 amplifier circuit
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD784927 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD784927 is a member of the NEC 78K/IV Series of microcontrollers equipped with a high-speed 16-bit CPU for VCR software servo control. The µPD784927 contains many peripheral hardware units ideal for VCR control, such as a multi-function timer unit
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PD784927
16-BIT
PD784927
78K/IV
PD784927,
PD78F4928,
PD784928,
hwin
"FRC"
sony 5.1 amplifier circuit
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9 BITS VIDEO CAPTURE CARD
Abstract: BL. SUPER SERVO MOTOR P5 BUZ 215 diagram uPD784927 uPD784927Y uPD784928 uPD78F4928Y 1.0A making code uPD78148
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD784927Y 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD784927Y is based on the µPD784927 with I2C bus control functions appended and are for VCR software servo control. The µPD784927Y contains many peripheral hardware units ideal for VCR control, such as a multi-function timer
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Original
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PD784927Y
16-BIT
PD784927Y
PD784927
PD784927Y,
PD78F4928Y,
PD784928,
784928Y
9 BITS VIDEO CAPTURE CARD
BL. SUPER SERVO MOTOR P5
BUZ 215 diagram
uPD784927
uPD784927Y
uPD784928
uPD78F4928Y
1.0A making code
uPD78148
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BUZ42
Abstract: No abstract text available
Text: SEMELAB 37E LTD » 0133107 0000253 * • SMLB t Hoo T-39-11 SEMELAB *SMA$ W JU BUZ 42 M O S POW ER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm r _ IU . J . max. A.5max 1.3 5.9 -i3-6r min. APPLICATIONS 15.8 max. • MOTOR CONTROLS • CONVERTERS
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T-39-11
BUZ42
BUZ42
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PDF
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Untitled
Abstract: No abstract text available
Text: SEUELAB LTD 3 7E D 0133107 0 DG0B71 □ ISMLB T-39-11 SEMELAB n •S//AS ^ BUZ 72A o 7 Woo MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _10.3_ max. -»|3.6|» 1.3 ¿.5ma«. T¥ 5.9' i. . 2. 8 min. Ì 15>.l.8 APPLICATIONS 10 max. ■4. J
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DG0B71
T-39-11
BUZ72A
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Untitled
Abstract: No abstract text available
Text: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J
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T-39-11
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relais datenbuch siemens
Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8
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BRT12H
BRT12M
relais datenbuch siemens
siemens datenbuch
triac zu 103 ma
BSS97
diode sg 5 ts
Scans-048
BUZ23
s489
DSAGER00059
Transistor Datenbuch
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PDF
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KDS 9E
Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter
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O-220
C67078-S1302-A2
SIL03609
SILQ3610
SIL03611
SIL03612
KDS 9E
l0225
C67078-A1307-A3
KDS 7B
KDS 1M
ksd 202
transistor buz 36
KDS 7c
C67078-S1302-A2
transistor buz 293
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BUZ MOSFET
Abstract: No abstract text available
Text: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING
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G0GDS42
BUZ900D
BUZ901D
BUZ905D
BUZ906D
BUZ MOSFET
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Untitled
Abstract: No abstract text available
Text: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES
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Q000533
BUZ905D
BUZ906D
300jiS
BUZ900D
BUZ901D
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PDF
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Untitled
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics
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O-220AB
L320Vv
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BUZ 349 mosfets
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics
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92CS-33741
92gs-44236
BUZ 349 mosfets
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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55A400
Abstract: BUZ60
Text: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics
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O-220RRENT
55A400
BUZ60
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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buz 90 af
Abstract: TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72
Text: Standard Power MOSFETs BUZ 72 A File N u m b e r 2262 N-Channel Enhancement-Mode Power Field-Effect Transistors 9 A, 100 V TDSIon = 0.25 D. N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ited a N anosecond s w itching speeds m Linear transfer characteristics
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O-22CIAB
buz 90 af
TL 2262
IC 2262 AF
BUZ 72 A
2262 af
tl 2262 am
BUZ72
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PDF
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transistor buz 311
Abstract: BUZ41 BUZ 41 A diagram
Text: Standard Power MOSFETs BUZ 41 A File N u m b e r 2256 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 4.5 A, 500 V rDS on = 1.5 O Features: • SOA is p ow er-dissipation lim ite d • N anosecond s w itching speeds m Linear transfer characteristics
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O-220AB
transistor buz 311
BUZ41
BUZ 41 A diagram
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PDF
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BUZ20
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics
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MOSFETs-BUZ20
O-220AB
92GS-441
BUZ20
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PDF
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buz 11 bv
Abstract: No abstract text available
Text: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds
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BUZ11
BUZ11
buz 11 bv
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 7E SEMELAB LTD D Ô1331Ô7 0 0 Q DE 4 7 3 • SflLB ' SEMELAB BUZ 32 MECHANICAL DATA MOS POWER D im e n s io n s in m m N-Channel Enhancement Mode u_'0-3_ r max. + I '*|3 .6 k - 1.3 A.5max. r- 5 .9 min. APPLICATIONS 5.I 15.8 noa x . m L |. 1 • DC/DC CONVERTERS
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T-39-11
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PDF
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BUZ45
Abstract: No abstract text available
Text: Standard Power MOSFETs File No. 2257 BUZ 45 N-Channel Enhancement-Mode Power Field-Effect Transistors 9.6 A, 500 V N -CH A N N EL E N H A N C EM EN T M ODE rosioni = 0 .6 O Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds
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O-204AA
BUZ45
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PDF
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92CS-39526
Abstract: No abstract text available
Text: Standard Power MOSFETs B U Z 60B File N um b er 2261 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.5 A, 400 V Tostonl = 1.5 Q N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond sw itching speeds m Linear transfer characteristics
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MOSFETs-BUZ60B
O-220AB
92CS-39526
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PDF
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