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    BUZ-271 Price and Stock

    Siemens

    Siemens BUZ271

    P-CHANNEL ENHANCEMENT IGBT TO-220 Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    BUZ-271 Datasheets (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BUZ271 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ271 Siemens Original PDF
    BUZ271 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ271 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ271 Siemens SIPMOS Power Transistor Scan PDF