2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

4900 SIEMENS

Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS

BUZ76

Contextual Info: _PnwerMOS transistor_ BUZ76 N AMER PHILIPS/DISCRETE OLE D • bbSBTBl 0D1447T 4 ■ 1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ76

Contextual Info: rZ 7 SGS-THOMSON ^7# lfflD g»[l!L[l(gir»K!lD(gi BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on Id BUZ76 400 V 1.8 fi 3 A • HIGH VO LTAG E - FOR OFF-LINE APPLICATIO NS • ULTRA FAST SW ITCHING • EASY DRIVE - FOR REDUCED COST AND

BUZ76

Abstract: TA17404 TB334
Contextual Info: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as

Contextual Info: 3 0 E » • 0 0 5 *1 7 3 1 Ä 7 S G S -T H O M S O N ^ 7 # ^D [^ Q [i[Li(g¥ ®K3D(gi s 4 ■ G s - p 3 q - l \ - t h o m s o n BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • TYPE V Dss ^DS(on) B U Z 76 A 400 V 2 .5 ß •d - 2 .6 A H IG H V O L T A G E - F O R O F F -L IN E

diode D100E

Abstract: BUZ76A T0220AB
Contextual Info: PowerMOS transistor_ _ BUZ76A_ N AMER PHI LI P S/ DI S CR ET E ObE D • bbSaTBl DGlMMBb 1 ■ r-ï^-n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ76A

Contextual Info: ¿ = 7 SCS THOMSON BUZ76A ilO g[^ö i!Li ]I[HMO©§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS(on) BUZ76A 400 V 2.5 ß 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE

BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Contextual Info: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P

Contextual Info: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: 7 ^ 2 3 7 OQMSbE? 35H •SG TH SGS-THOMSON BUZ76A IIL J O « ! N - CHANNEL EN H ANC EM ENT MODE PO W ER MOS TRAN SISTO RS TYPE BUZ76A V dss RDS on Id 400 V < 2.5 Q 3 .8 A ■ TYPICAL RDS(on) = 1.65 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

Contextual Info: BUZ76 Semiconductor October 1998 Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET File Number 2264.1 Features • 3 A ,4 0 0 V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

buz76a

Contextual Info: £Z7 SGS-THOMSON BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ76A 400 V R DS on 2.5 fi 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:

Contextual Info: BUZ76A {£ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 2.6A, 400V TOP VIEW • rDS on) = 2 .5 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics

2SK955

Abstract: 2SK565 2SK566 2SK783 BUZ64 2sk903 2SK566A BUZ357 2SK726 2SK727
Contextual Info: 19875 6 SIPMOS-FET ± m ^ - K ÍK T p f. « ' . a ä I I / ^ s í : 7^ ' ,. A ¡£ fé R ds .O N Cs • jiE-tyets^ Al’«. 1 S H H S H h | /S~_ 19 12 80 0.25 0.3 ECONOFET T0220 25 20 125 0.11 0.15 ECONOFET T03P N 37 30 150 0.07 0.1 ECONOFET T03P BUZ76A

BUZ76

Contextual Info: Æ T SGS-THOMSON BUZ76 RiflO [S lilL[lOT©RDD gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE i VDSS ^DS(on BUZ76 I 400 V 1.8 n Id 3 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND

sy 171

Abstract: diode sy 171 BUZ76 T0220AB
Contextual Info: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

DATA TRANSISTOR

Abstract: BUZ76
Contextual Info: Technical Data TRANSISTOR maximum ratings VDS 400.0 V NO. BUZ76 VDG 400.0 V TYPE V-MOS 20.0 V empty empty 3.0 A empty empty 12.0 A CASE TO-220AB A empty empty 40.0 W empty empty 3.1 °C/W VGS ± ID IDM IG empty Max. Power Dissipation PT at TC = 25 °C Max. Thermal Resistance (Rth J-C)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

1N7001

Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
Contextual Info: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)

BUZ171

Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

BUZ171

Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
Contextual Info: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10