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    BUZ76 Search Results

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    BUZ76 Price and Stock

    Rochester Electronics LLC BUZ76

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ76 Bulk 495
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    Rochester Electronics LLC BUZ76A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ76A Bulk 495
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    Siemens BUZ76

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    Bristol Electronics BUZ76 50
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    Quest Components BUZ76 240
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    Chip 1 Exchange BUZ76 500
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    Infineon Technologies AG BUZ76A

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    Bristol Electronics BUZ76A 50
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    Quest Components BUZ76A 40
    • 1 $7.5
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    Rochester Electronics BUZ76A 10,600 1
    • 1 $0.5833
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    • 100 $0.5483
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    Infineon Technologies AG BUZ76

    3 A, 400 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220
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    Quest Components BUZ76 1,600
    • 1 $2.1
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    • 1000 $0.735
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    Find more BUZ76 price and stock on Findchips.com

    BUZ76 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ76 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    BUZ76 Infineon Technologies N-Channel SIPMOS Power Transistor, 400V, TO-220, 1.80 ?, 3.0A Original PDF
    BUZ 76 Infineon Technologies Conventional Power MOS Transistors Original PDF
    BUZ76 Intersil 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Original PDF
    BUZ76 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ76 Siemens Original PDF
    BUZ76 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ76 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ76 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    BUZ76 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUZ76 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ76 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ76 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUZ76 Unknown FET Data Book Scan PDF
    BUZ76 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ76 Semelab MOS Power Transistor Scan PDF
    BUZ76 Siemens Power Transistors Scan PDF
    BUZ76 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ76A Infineon Technologies N-Channel SIPMOS Power Transistor, 400V, TO-220, 2.50 ?, 2.7A Original PDF
    BUZ 76A Infineon Technologies Conventional Power MOS Transistors Original PDF

    BUZ76 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ76

    Abstract: TA17404 TB334
    Text: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as


    Original     		BUZ76 BUZ76) TA17404. BUZ76 TA17404 TB334 PDF

    BUZ76A

    Abstract: TA17404 BUZ76 TB334
    Text: BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.500Ω (BUZ76 field effect transistor designed for applications such as


    Original     		BUZ76A BUZ76 TA17404. BUZ76A TA17404 TB334 PDF

    DATA TRANSISTOR

    Abstract: BUZ76
    Text: Technical Data TRANSISTOR maximum ratings VDS 400.0 V NO. BUZ76 VDG 400.0 V TYPE V-MOS 20.0 V empty empty 3.0 A empty empty 12.0 A CASE TO-220AB A empty empty 40.0 W empty empty 3.1 °C/W VGS ± ID IDM IG empty Max. Power Dissipation PT at TC = 25 °C Max. Thermal Resistance (Rth J-C)


    Original     		BUZ76 O-220AB DATA TRANSISTOR BUZ76 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64 PDF

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A PDF

    BUZ76

    Abstract: No abstract text available
    Text: _PnwerMOS transistor_ BUZ76 N AMER PHILIPS/DISCRETE OLE D • bbSBTBl 0D1447T 4 ■ 1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ76 0D1447T BUZ76_ T-39-11 BUZ76 PDF

    BUZ76

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON ^7# lfflD g»[l!L[l(gir»K!lD(gi BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on Id BUZ76 400 V 1.8 fi 3 A • HIGH VO LTAG E - FOR OFF-LINE APPLICATIO NS • ULTRA FAST SW ITCHING • EASY DRIVE - FOR REDUCED COST AND


    OCR Scan     		BUZ76 O-220 00A/jiS BUZ76 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 0 E » • 0 0 5 *1 7 3 1 Ä 7 S G S -T H O M S O N ^ 7 # ^D [^ Q [i[Li(g¥ ®K3D(gi s 4 ■ G s - p 3 q - l \ - t h o m s o n BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • TYPE V Dss ^DS(on) B U Z 76 A 400 V 2 .5 ß •d - 2 .6 A H IG H V O L T A G E - F O R O F F -L IN E


    OCR Scan     		BUZ76A PDF

    diode D100E

    Abstract: BUZ76A T0220AB
    Text: PowerMOS transistor_ _ BUZ76A_ N AMER PHI LI P S/ DI S CR ET E ObE D • bbSaTBl DGlMMBb 1 ■ r-ï^-n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUZ76A bLSBT31 T-39-11 diode D100E BUZ76A T0220AB PDF

    BUZ76A

    Abstract: No abstract text available
    Text: ¿ = 7 SCS THOMSON BUZ76A ilO g[^ö i!Li ]I[HMO©§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS(on) BUZ76A 400 V 2.5 ß 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE


    OCR Scan     		BUZ76A O-220 BUZ76A PDF

    BUZ900D

    Abstract: BUZ50ASM BUZ50B-220SM
    Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P


    OCR Scan     		BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		BUZ76A TA17404. PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ76 Semiconductor October 1998 Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET File Number 2264.1 Features • 3 A ,4 0 0 V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		BUZ76 TA17404. PDF

    buz76a

    Abstract: No abstract text available
    Text: £Z7 SGS-THOMSON BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ76A 400 V R DS on 2.5 fi 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:


    OCR Scan     		BUZ76A O-220 00A//xS buz76a PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ76A {£ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 2.6A, 400V TOP VIEW • rDS on) = 2 .5 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		BUZ76A BUZ76A 92GS-44236 PDF

    2SK955

    Abstract: 2SK565 2SK566 2SK783 BUZ64 2sk903 2SK566A BUZ357 2SK726 2SK727
    Text: 19875 6 SIPMOS-FET ± m ^ - K ÍK T p f. « ' . a ä I I / ^ s í : 7^ ' ,. A ¡£ fé R ds .O N Cs • jiE-tyets^ Al’«. 1 S H H S H h | /S~_ 19 12 80 0.25 0.3 ECONOFET T0220 25 20 125 0.11 0.15 ECONOFET T03P N 37 30 150 0.07 0.1 ECONOFET T03P BUZ76A


    OCR Scan     		2SK900 T0220 2SK901 2SK902 BUZ76A BUZ60 BUZ64 BUZ74A 2SK955 2SK565 2SK566 2SK783 2sk903 2SK566A BUZ357 2SK726 2SK727 PDF

    BUZ76

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON BUZ76 RiflO [S lilL[lOT©RDD gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE i VDSS ^DS(on BUZ76 I 400 V 1.8 n Id 3 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND


    OCR Scan     		BUZ76 BUZ76 PDF

    sy 171

    Abstract: diode sy 171 BUZ76 T0220AB
    Text: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ76 0D14M7T T0220AB; byS3T31 T-39-11 sy 171 diode sy 171 BUZ76 T0220AB PDF

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33 PDF

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 PDF

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


    OCR Scan     		BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C PDF

    BUZ171

    Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
    Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10


    OCR Scan     		BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71 PDF