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    BUZ900 APPLICATION Search Results

    BUZ900 APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    BUZ900 APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ901

    Abstract: BUZ900 BUZ906 BUZ905
    Text: BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ900 BUZ901 BUZ905 BUZ906 BUZ90125 BUZ901 BUZ900 BUZ906 BUZ905

    Untitled

    Abstract: No abstract text available
    Text: BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ900 BUZ901 BUZ905 BUZ906

    BUZ906

    Abstract: BUZ905 BUZ901 BUZ900
    Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905 BUZ906 BUZ900 BUZ901 -160V BUZ90 BUZ906 BUZ905 BUZ901 BUZ900

    Untitled

    Abstract: No abstract text available
    Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905 BUZ906 BUZ900 BUZ901

    Untitled

    Abstract: No abstract text available
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ900P BUZ901P

    BUZ901P

    Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ900P BUZ901P BUZ901P BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    2SK1058 MOSFET APPLICATION NOTES

    Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
    Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully


    Original     		PDF LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    30D40

    Abstract: No abstract text available
    Text: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ900 BUZ901 BUZ905 BUZ906 BUZ901 30D40

    BUZ MOSFET

    Abstract: No abstract text available
    Text: bDE D I 5133107 000D530 ST 1 • S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING


    OCR Scan     		PDF 000D530 BUZ905 BUZ906 BUZ900D BUZ905D BUZ901D BUZ906D BUZ MOSFET

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES


    OCR Scan     		PDF BUZ900 BUZ901 BUZ900D BUZ905D BUZ901D BUZ906D

    buz901 buz906

    Abstract: BUZ905 magnatec mosfets BUZ901 BUZ906
    Text: BUZ905 BUZ906 IV I A CB INI A MECHANICAL DATA P-CHANNEL POWER MOSFET Dim ensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905 BUZ906 BUZ900 BUZ901 BUZ905 -160V -200V buz901 buz906 magnatec mosfets BUZ901 BUZ906

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D