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    BUZ906 Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BUZ906

    P Channel Mosfet, -200V, -8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ906
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ906 Bulk 1
    • 1 $8.88
    • 10 $8.01
    • 100 $6.35
    • 1000 $5.14
    • 10000 $5.14
    		Buy Now

    TT Electronics Power and Hybrid / Semelab Limited BUZ906P

    P Channel Mosfet, -200V, 8A, To-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ906P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ906P Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    BUZ906 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ906 Magnatec P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. Original PDF
    BUZ906 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ906D Magnatec P-CHANNEL POWER MOSFET Original PDF
    BUZ906D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ906DP Magnatec P-CHANNEL POWER MOSFET Original PDF
    BUZ906P Magnatec P-CHANNEL POWER MOSFET Original PDF
    BUZ906P Magnatec P-CHANNEL POWER MOSFET Original PDF
    BUZ906P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ906X4S Magnatec P-CHANNEL POWER MOSFET Original PDF

    BUZ906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ900P

    Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
    Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905D BUZ906D BUZ900D BUZ901D

    BUZ905X4S

    Abstract: BUZ906X4S 200v 100mA mosfet n-channel 500w power mosfet
    Text: BUZ905X4S BUZ906X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )


    Original     		PDF BUZ905X4S BUZ906X4S 59Saturation 100mA BUZ905X4S BUZ906X4S 200v 100mA mosfet n-channel 500w power mosfet

    BUZ906

    Abstract: BUZ905 BUZ901 BUZ900
    Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905 BUZ906 BUZ900 BUZ901 -160V BUZ90 BUZ906 BUZ905 BUZ901 BUZ900

    Untitled

    Abstract: No abstract text available
    Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905 BUZ906 BUZ900 BUZ901

    BUZ906D

    Abstract: BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D
    Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP BUZ906D BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D

    Untitled

    Abstract: No abstract text available
    Text: BUZ906D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)16.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55


    Original     		PDF BUZ906D

    Untitled

    Abstract: No abstract text available
    Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ905P BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ905X4S BUZ906X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )


    Original     		PDF BUZ905X4S BUZ906X4S 100mA

    Untitled

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP

    BUZ906D

    Abstract: BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D
    Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905D BUZ906D BUZ900D BUZ901D BUZ906D BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D

    Untitled

    Abstract: No abstract text available
    Text: BUZ906P Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		PDF BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ906 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		PDF BUZ906

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1645 Troy Huebner 2007౎5ሆ ᆅჾ සࢆ჋ስMOSFET !!!!Ԩᆌᆩጀ๥༵ࠃକ࠲ᇀெࡔࡔॆӷ‫༹ڞ‬ፌႎ‫ߛڦ‬Ⴀ āāLM4702‫ڦ‬༬Ⴀ၌዆କ‫ܔ‬MOSFETഗॲ‫ڦ‬჋ስăፌዘ ీĂ‫ߛג‬ԍኈ‫ڦ‬ᅼೕ‫ٷݣ‬ഗൻ‫ۯ‬IC‫ڦ‬ยऺኧ‫׼‬႑တă


    Original     		PDF LM4702 100mA 25W/8 LM4072 Audio Power Amplifier MOSFET TOSHIBA LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139

    2SK1058 MOSFET APPLICATION NOTES

    Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
    Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully


    Original     		PDF LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    buz901 buz906

    Abstract: BUZ905 magnatec mosfets BUZ901 BUZ906
    Text: BUZ905 BUZ906 IV I A CB INI A MECHANICAL DATA P-CHANNEL POWER MOSFET Dim ensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905 BUZ906 BUZ900 BUZ901 BUZ905 -160V -200V buz901 buz906 magnatec mosfets BUZ901 BUZ906

    buz906dp

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP buz906dp

    BUZ901P

    Abstract: buz900p BUZ906P
    Text: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * *16.26 a o c i(0.640) ne/ni * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET


    OCR Scan     		PDF BUZ905P BUZ906P BUZ900P BUZ901P -160V BUZ901P buz900p BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ905X4S BUZ906X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS A ài CO "T j 0.75 (0 .0 3 0 ) ^ 0.85 (0 .0 3 3 ) Ë* to CO FEATURES 1 JJJ J V • HIGH SPEED SWITCHING


    OCR Scan     		PDF BUZ905X4S BUZ906X4S OT227 --10V --100mA -200V

    T03PN

    Abstract: 2N3820 2SJ109 2SJ74 2SJ201 2SJ306 j177 2SJ449 T092 BUZ906
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-FET b an^aBMTHOM nop^flKe Kofl: 2SJ201 2N3820 2SJ306 2SJ449 2SJ307 2SJ74 2SJ109 2N5460 2N5461 2SJ103 BUZ906 J174 J177 VdSS [B] -200 -20 -250 -250 -250 -25 -30 -40 -40 -50 -8


    OCR Scan     		PDF 2SJ201 T03PN 2N3820 2SJ306 T0220 2SJ449 2SJ307 2SJ74 T03PN 2SJ109 j177 T092 BUZ906

    BUZ905D

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905D BUZ906D BUZ900D BUZ901D

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    30D40

    Abstract: No abstract text available
    Text: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ900 BUZ901 BUZ905 BUZ906 BUZ901 30D40