1N914B
Abstract: No abstract text available
Text: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).
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1N914B
1N914B
100uA)
DO-35
com/1n914b
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transistor A25 SMD
Abstract: rl 254 diode
Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)
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PS2561-1
PS2561L-1
VDE0884
PS2561-1
transistor A25 SMD
rl 254 diode
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8F SOT-23 PNP on
Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process
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FDLL914
LL-34
FDLL914A
FDLL914B
FDLL916
FDLL916A
8F SOT-23 PNP on
1n4148 5D mark
FDH777
mark fq sot
8F SOT23 PNP
SOT-23 Mark ZF
1N4148 surface mount
NDSJ105
5d surface mount diode
BV 9y transistor
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4816GSM-3 Asymmetric Dual N-channel Power MOSFET with Integrated Schottky Diode Simple Drive Requirement S1/D2 S1/D2 Ideal for DC-DC Converters CH-1 BV DSS 30V RDS ON 22mΩ ID BV DSS RDS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2
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AP4816GSM-3
AP4816GSM-3
AP4816
4816GSM
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SSM4816SM
Abstract: No abstract text available
Text: SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement MOSFET-1 BV DSS S1/D2 S1/D2 Suitable for DC-DC Converters R DS ON 22mΩ ID MOSFET-2 BV DSS R DS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2 D1 Fast switching performance SO-8 G2 S2/A S2/A
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SSM4816SM
SSM4816SM
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FLLD261
Abstract: No abstract text available
Text: FLLD261 3 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V MIN @ IR = 5 uA PACKAGE TO-236AB (Low) P8A ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 -55 to +150 Degrees C
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FLLD261
O-236AB
FLLD261
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FLLD261
Abstract: FS PKG CODE 49
Text: FLLD261 3 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V MIN @ IR = 5 uA PACKAGE TO-236AB (Low) P8A ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 -55 to +150 Degrees C
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FLLD261
O-236AB
FLLD261
FS PKG CODE 49
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Untitled
Abstract: No abstract text available
Text: S o c k e ts , in s u la te d , lo c k in g , 2 5 0 , 4 0 0 a n d 1 0 0 0 A m p s Sockets IB.BV with bayonet locking IB.BV IB.BV are insulated sockets with bayonet locking. IB.BV sockets are suitable for connection to conductors with cable lug, for screwing onto bus bars
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IB12BV,
IB16BV
IB30BV
IB12BV
IB30BV
IB16BV
M36x3
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2N2228
Abstract: 2N2227
Text: POWER DARLINGTONS TYPE NO. PT M AXIMUM RATINGS @ le 25°C BV cbo BV ceo BV ebo V V V A Watts MIN MAX B 1 le V« A V Sat Voltages VCE V be V V h« Test Conditions le Is ItBO A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10
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2N2226
2N2227
2N2228
2N2229
2N2230
2N2231
2N2232
2N2233
2N3470
2N3471
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BFR39
Abstract: bfr40 BFR80 BFR81 BFR79 BFR41 NPN pnp MATCHED PAIRS BFR61 Bfr60 transistor BFR40
Text: Silect General P u rp ose T ra n sisto rs — Ic up to 800 m A C a se O u tlin e s Polarity PTOT Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) T IS90 (1) TIS91 (1) Maximum ratings BV BV C BO V CEO V Cont IC A
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BFR60
BFR61
BFR62
BFT85
BFT86
BFT87
BFR79
BFR80
BFR81
BFR50
BFR39
bfr40
BFR80
BFR81
BFR79
BFR41
NPN pnp MATCHED PAIRS
BFR61
Bfr60
transistor BFR40
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Untitled
Abstract: No abstract text available
Text: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND
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LP0701
LP0701N3
LP0701
LP0701ND
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Untitled
Abstract: No abstract text available
Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
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Untitled
Abstract: No abstract text available
Text: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
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BA219
Abstract: FDH444 15921 1N628 DO-35 1S920 1N842 1N3070 1N629 1N643
Text: FAIRCHILD DIODES D IO D ES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE DEVICE NO. BV V Min nA Max 1 1N661 240 10000 200 1.0 6.0 2 FDH400 200 100 150 1.0 200 Item ir VF V Max vr @ V @ If mA C pF Max 20 «rr ns Max Package No. 300 DO-35 50
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1N661
do-35
FDH400
1N3070
1N643
1N842
BA219
FDH444
15921
1N628
DO-35
1S920
1N629
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TO-202 transistor NPN
Abstract: ECG312 ECG311 ECG299 ECG312 transistor ecg32
Text: PHILIPS E C G INC 17E D Transistors cont'd EGG Type Description and Application • (=1=53=120 0005033 ê ■ (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV q b o BV c e o
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ECG289A)
ECG290AMCP
ECG289A
ECG290A
ECG290A
ECG291
ECG292
ECG292)
O-220
AmRF-50F
TO-202 transistor NPN
ECG312
ECG311
ECG299
ECG312 transistor
ecg32
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Untitled
Abstract: No abstract text available
Text: SIEMENS IL1/2/5 PHOTOTRANSISTOR OPTOCOUPLER FEATURES * Current Transfer Ratio at lF = 10 mA IL 1 ,20% Min. IL 2 ,100% Min. IL 5 ,50% Min. * High Collector-Em itter Voltage IL1 - BV ceo = 50 V IL2, IL5 - BV ceo = 70 V Package Dimensions in Inches mm J ÎL J ÎL J ÎL
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E52744
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2N2228
Abstract: 2N2227 2N2229 2N3471 2N2232 2N2231 SOLID POWER CORP BVCEO 2000 PT 10000 2N2226
Text: SOLI» POWER CORP TS »F|fi3t,S70a 0000 1 5 3 |~ ~ T'33-6I POW ER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcao BV ceo BV ebo le V Watts V V A hIFE @ MIN MAX le A VCE V Sat Voltages V ce V be V V Test Conditions Ib le Iebo A A ma 2N2226 150 50 50 15
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2N2226
2N2227
2N2228
2N2229
2N2230
2N2231
2N2232
2N2233
2N3470
2N3471
SOLID POWER CORP
BVCEO 2000
PT 10000
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2N2828
Abstract: 2N2383 2N1886 2n1250
Text: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1
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2N5067
2N5068
N5069
2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2N389
2N2828
2N2383
2N1886
2n1250
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TN25A
Abstract: No abstract text available
Text: T N 25 A Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV qSS ! ^DS O N ^ G S (th ) ' d <ON) BV dgs (max) (m ax) (min) TO-243AA* 60V 1 .5 0 1.6V 3.0A — TN2506ND 100V 1.5 0 1.6V
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O-243AA*
TN2506ND
TN2510ND
TN2510N8
OT-89.
TN25A
TN25A
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c3112
Abstract: No abstract text available
Text: Bipolar transistors-US/European series Product summary NPN transistors, SST3 and SMT3 Table 1 General purpose small signal amplifiers SMT3 SST3 C0b f T hFE I C * V CE V ce &V be ® lc sat (sat) max min BV cbo BV ceo BVeb0 •C B0® V CB Part no. m in
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SST6838
SST2222A
MMST2222A
c3112
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2N4124 rohm
Abstract: No abstract text available
Text: ROHM CO LTD MDE D El TflSflTTT 00032?*} 5 E3RHM . V> . — , g M fa -tn 7~-3S?-01 General Purpose Amplifiers and Switches Type PN2219 PN2219A Package BV cbo Min. Fi0-1 TO -92 (EBC) TO -92 (EBC) 60V 75V BVceo Min. 30V 40V BV ebo Min. 5V 6V hFE m £ V“
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150mA
2N3947
PN3947
2N4124 rohm
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3N123
Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Text: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V
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3N123
TELEDYNE CRYSTALONICS
3N136
VE2B
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BA216
Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
Text: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35
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BA218
DO-35
fdh900
fdh999
1N461A
BA217
BA216
BA164
1S44
1N457JAN
1N458JAN
1N459JAN
BA130
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KPS2832
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE: 01/18/2007 cosmo Photocoupler ELECTRONICS CORPORATION NO. 61P25004 : KPS2832 REV. SHEET 1 OF 6 1 High Isolation Voltage High Collector To Emitter Voltage SSOP Photocoupler • Features 1. High isolation voltage BV =3750 Vrms
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61P25004
KPS2832
KPS2832
61P25004
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