Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BV 42 TRANSISTOR EQUIVALENT Search Results

    BV 42 TRANSISTOR EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BV 42 TRANSISTOR EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010AST)

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223

    sot223 device Marking

    Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869G OT223 OT223 Q26100 sot223 device Marking npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC

    X5T951

    Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
    Text: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T951G OT223 OT223 X5T951 ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT

    ZXTN

    Abstract: sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC
    Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007G OT223 OT223 ZXTN sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    ZXTP2012GTA

    Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
    Text: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2012G OT223 OT223 ZXTP2012GTA ZXT26100 ZXTP2012GTA sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN2005G ZX5T869G OT223 OT223 ZX5T869GTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E

    X5T849

    Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
    Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T849G OT223 OT223 X5T849 ZX5T849G ZX5T849GTA ZX5T849GTC

    sot223 device Marking

    Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869G OT223 OT223 sot223 device Marking transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC

    ZXTN2005G

    Abstract: ZXTN2005GTA ZXTN2005GTC
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2005G OT223 OT223 ZXTN2005G ZXTN2005GTA ZXTN2005GTC

    zxtn

    Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2005G OT223 OT223 R26100 zxtn sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA

    53Z Zetex

    Abstract: "PNP Transistor"
    Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits,


    Original     		PDF -60mV 12Road 53Z Zetex "PNP Transistor"