BV-M541RD
Abstract: BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD BV-M325RD
Text: SINCE 1981 Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD
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BV-M541RD
BV-M545RD
BV-M545RE
BV-M542RD
BV-M543RD
BV-N541RD
BV-N545RD
BV-N545RE
BV-N542RD
BV-N543RD
BV-M541RD
BV-M542RD
BV-M543RD
BV-M544RD
BV-M545RD
BV-M545RE
BV-M546RD
BV-M54DRD
BV-M321RD
BV-M325RD
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bv 748
Abstract: BV-M541RD BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD
Text: Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD BV-M321RD
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BV-M541RD
BV-M545RD
BV-M545RE
BV-M542RD
BV-M543RD
BV-N541RD
BV-N545RD
BV-N545RE
BV-N542RD
BV-N543RD
bv 748
BV-M541RD
BV-M542RD
BV-M543RD
BV-M544RD
BV-M545RD
BV-M545RE
BV-M546RD
BV-M54DRD
BV-M321RD
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VD-03
Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Text: Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD BV-A505RE
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BV-A501RD
BV-A505RD
BV-A505RE
BV-A502RD
BV-A503RD
BV-C501RD
BV-C505RD
BV-C505RE
BV-C502RD
BV-C503RD
VD-03
BV-A501RD
BV-A502RD
BV-A503RD
BV-A504RD
BV-A505RD
BV-A505RE
BV-A506RD
BV-A50DRD
BV-M501RD
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bv 748
Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Text: SINCE 1981 Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD
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Original
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BV-A501RD
BV-A505RD
BV-A505RE
BV-A502RD
BV-A503RD
BV-C501RD
BV-C505RD
BV-C505RE
BV-C502RD
BV-C503RD
bv 748
BV-A501RD
BV-A502RD
BV-A503RD
BV-A504RD
BV-A505RD
BV-A505RE
BV-A506RD
BV-A50DRD
BV-M501RD
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BV-N542RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-N542RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BV-N542RD
BV-N542RD
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-N542RF SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BV-N542RF
BV-N542RF
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BV-N546RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-N546RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BV-N546RD
BV-N546RD
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BV-N546RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-N546RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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Original
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BV-N546RD
BV-N546RD
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BV-N544RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-N544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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Original
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BV-N544RD
BV-N544RD
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BV-M505RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-M505RD SINCE 1981 ● Features : 1. 0.50 inch 12.70mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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Original
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BV-M505RD
BV-M505RD
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PDF
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BV-M544RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BV-M544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BV-M544RD
BV-M544RD
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C495 transistor
Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75
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BFT39
BFT40
BFT41
BFT29
BFT30
BFT31
BFY50
BFY51
BFY52
BFT53
C495 transistor
transistor c495
C735
c495
bc300 equivalent
NPN C460
BFY50 equivalent
u c756
2n-2411
2n1613 equivalent
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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OCR Scan
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BS9300
2N2219A
C736
C495 transistor
bc303 equivalent
2N2222A 026
C735
bc143 equivalent
bc143
C644
equivalent transistor 2N1711
transistor c633
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NTE153
Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,
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OCR Scan
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NTE159M)
NTE159)
T066-
NTE123A)
NTE153
Nte 157
NTE123AP
nte129
NTE159M
nte123
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PDF
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NTE2360
Abstract: No abstract text available
Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10
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OCR Scan
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T0220
T0126
NTE2362)
NTE2361)
00D3S27
NTE2360
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PDF
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t0218
Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio
Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd
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OCR Scan
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407-512MHz)
O39EC
NTE391)
T0218
NTE390)
200 watts audio amp power transistors
NTE377
NTE374
NTE373 NTE374
NTE382
NTE392
45W AMP
NTE373
25w audio
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PDF
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current
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OCR Scan
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250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER MOS FIELD EFFECT TRANSISTORS Dlag. Number BV dss Vgs Off BVGSS •d rosi0 ») C |S S gfs Pd N-CHANNEL Enhancement Mode High Speed Switch T03 1f 100 Min 4 Max ±20 Max 33 0.08 Max 3000 Max 9 Min 150 Max N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL
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OCR Scan
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T0220
150ns,
110ns
NTE89
D35MA
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PDF
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NTE130
Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)
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OCR Scan
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27MHz,
NTE197)
T0220
NTE196)
27MHz)
T039HS
NTE130
27mhz rf amplifier
NTE197
NTE199
NTE241
16 amp npn darlington power transistors t03
27mhz rf ic
NTE196
NTE210
NTE211
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PDF
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L0727
Abstract: A109 HDP-22
Text: THIS O R A W I N C IT 'WP1J9L '5 H E D . BV COPYRIGHT f P AMP I NCOPPORATED. LOC , 19 | RE LE AS ED FOR PUBL fCAT ION 015 T BD ALL INTERNATIONAL PIÔHTS RESERVED. REVISIONS 39 p P ZONE LTR <3 V DATE DE3CRJPTJ0N REL WAS 3 7 —4 8 7 0 - 16 0 -
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OCR Scan
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MIL-T-70727.
HDP-22
L0727
A109
HDP-22
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PDF
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il7107
Abstract: bd504
Text: D R A W I N G MADE THIS D R A W I N G @ IN THIRD ANGLE IS UNPU&LISHEO. J PROJECTION , T9 R E L E A S E D FOR P U d L l C A T l O N BV CÛPVRJÔHT 1 » AM P fNCOW>Ci*ATEO. ACl. MOD rsz— 2 BD INTERNATIONAL RÏ GHTS » E S £R V £ 0 . O f ST 39 Rt v;s;CNi
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OCR Scan
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BD5049
HOP-22,
iL-7-1072?
47T-S
il7107
bd504
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PDF
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Untitled
Abstract: No abstract text available
Text: SC-.1.5 UNCONTROLLED DOCUMENT FRONT SIDE PART NUMBER S S P -E X 118MB630 PRELIMINARY IN P /N DIR BACK REV. 22.65 [0.892] O O O b ö b 118,25 C4.656] o o o cD cD cD ÇD cD cD cD cD cD cr D O : O : °0 •O ■O ■O : » : : : : : : I I 8,97 C0.353: 19.00 CO.748]
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OCR Scan
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SSP-EX118MB630
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PDF
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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OCR Scan
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of
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OCR Scan
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ALA400/401
ALA400/401
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PDF
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