CH-2540
Abstract: Micro Crystal Switzerland ocxo 10MHz 12v 1cd27
Text: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *
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CONTROL15pF
CH-2540
Micro Crystal Switzerland
ocxo 10MHz 12v
1cd27
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OCXO 20 MHZ
Abstract: OCXO CH-2540 60 Hz crystal oscillator BV3 marking
Text: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ± 0.7 ppm * < ± 4.0 ppm * < ± 0.1 ppm *
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CH-2540
OCXO 20 MHZ
OCXO
60 Hz crystal oscillator
BV3 marking
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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sine wave voltage controlled oscillator
Abstract: sine wave crystal controlled oscillator 20mhz crystal oscillator dil package CH-2540 marking K "micro x" crystal oscillator 1 MHz 4 pins
Text: OCXOWSOven Controlled Crystal Oscillator Sine Wave Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.2 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *
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10kohms)
CH-2540
sine wave voltage controlled oscillator
sine wave crystal controlled oscillator
20mhz crystal oscillator dil package
marking K "micro x"
crystal oscillator 1 MHz 4 pins
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sine wave voltage controlled oscillator
Abstract: scocxowt CH-2540 4 pin 20 MHz crystal oscillator
Text: SCOCXOWS Ultra Tight Stability Sine Wave Output 3.3 V Power Supply FREQUENCY STABILITY up to 20 MHz NOTE 1 OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V see note 1 < ±0.3 ppm * < ±2.5 ppm * < ±0.025 ppm TEMP. RANGE *
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10kohms)
CH-2540
sine wave voltage controlled oscillator
scocxowt
4 pin 20 MHz crystal oscillator
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Untitled
Abstract: No abstract text available
Text: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *
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CH-2540
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CH-2540
Abstract: ocxow
Text: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ± 0.7 ppm * < ± 4.0 ppm * < ± 0.1 ppm *
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CH-2540
ocxow
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Untitled
Abstract: No abstract text available
Text: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *
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CH-2540
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scocxowt
Abstract: CH-2540 54 mhz crystal oscillator
Text: SCOCXOWT Ultra Tight Stability HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V ≤ 20 MHz > 20 MHz LOAD ±10%: NOTE 1 see note 1 < ±0.3 ppm * < ±2.5 ppm * TEMP. RANGE *
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CH-2540
scocxowt
54 mhz crystal oscillator
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CH-2540
Abstract: No abstract text available
Text: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *
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pea15pF
CH-2540
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BV4 pnp
Abstract: BV4 transistor 2SB624 2SD596
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
BV4 pnp
BV4 transistor
2SB624
2SD596
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2SB624
Abstract: BV4 transistor marking BV4 transistor bv5
Text: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35
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2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
BV4 transistor
marking BV4
transistor bv5
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2SB624
Abstract: TRANSISTOR BV3 BV4 transistor
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
TRANSISTOR BV3
BV4 transistor
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hFE-200 transistor PNP
Abstract: TRANSISTOR BV3
Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SB624
OT-23-3L
OT-23-3L
-100mA)
2SD596.
-700mA
-700mA,
-70mA
-10mA
hFE-200 transistor PNP
TRANSISTOR BV3
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sot-23 bv2
Abstract: marking BV4 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
sot-23 bv2
marking BV4
2SB624
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2SB624
Abstract: 2SD596 BV4 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SB624
OT-23-3L
-100mA)
2SD596.
-100mA
-700mA
-700mA,
-70mA
-10mA
2SB624
2SD596
BV4 transistor
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hFE-200 transistor PNP
Abstract: 2SB624
Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SB624
OT-23
OT-23
-100mA)
2SD596.
-700mA
-70mA
-10mA
-100A,
hFE-200 transistor PNP
2SB624
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2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
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Untitled
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors COLLECTOR SOT-23 3 3 P b Lead Pb -Free 1 BASE 1 2 2 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V
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2SB624
OT-23
16-Aug-05
OT-23
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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2SB624
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA
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2SB624
SC-59
-500mA
-250mA
-200mA
-100mA
16-Aug-05
SC-59
2SB624
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bv5 300
Abstract: 2SB624
Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation
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2SB624
SC-59
-500mA
-250mA
-200mA
-100mA
16-Aug-05
SC-59
bv5 300
2SB624
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Bv4 smd transistor
Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
MARKING SMD PNP TRANSISTOR BV5
TRANSISTOR SMD BV4
CSB624
equivalent transistor smd 3 em 7
sot-23 MARKING bv
SMD TRANSISTOR BV5
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