transistor G11
Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Text: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13003
O-126
TS13003CT
TS13003CK
transistor G11
to-126 HIGH SPEED SWITCHING transistor
g11 transistor
NPN Transistor 10A 400V
NPN Transistor 1A 400V to - 92
to-126 npn switching transistor 400v
d 772 transistor
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TRANSISTOR 0835
Abstract: No abstract text available
Text: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo
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TSC966
OT-223
300mA
TSC966CT
TSC966CW
OT-223
TRANSISTOR 0835
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NPN Transistor 1A 800V to - 92
Abstract: transistor -25 F07
Text: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type
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TS13003MV
TS13003MVCT
NPN Transistor 1A 800V to - 92
transistor -25 F07
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npn 600v to92
Abstract: NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma TSC966cw A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92
Text: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ●
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TSC966
OT-223
300mA
TSC966CT
TSC966CW
npn 600v to92
NPN Transistor 600V
TSC966
TRANSISTOR 0835
NPN Transistor TO92 300ma
NPN 600V transistor
NPN Transistor TO92 400V 300ma
A3 SOT223
NPN Silicon Epitaxial Planar Transistor to92
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tsc13003
Abstract: TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92
Text: TSC13003H Preliminary High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram
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TSC13003H
O-126
TS13003HCT
tsc13003
TSC13003H
NPN Transistor 1A 800V to - 92
transistor 800V 1A
TSC1300
NPN Transistor 1A 400V to - 92
TSC13
1.5A NPN power transistor TO-92
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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RF transistor marking IN SOT-89
Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150
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TSB1424
OT-89
OT-23
-100mA
TSD2150
TSB1424CY
TSB1424CX
RF transistor marking IN SOT-89
RF transistor marking H SOT-89
RF transistor marking "SOT-89"
RF transistor Type code SOT-89
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BD transistor
Abstract: smd marking BD 2SB1189 BD marking
Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80
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2SB1189
-500mA
-50mA
100MHz
BD transistor
smd marking BD
2SB1189
BD marking
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53Z Zetex
Abstract: 1a SOT89 IC35
Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2009Z
-60mV
ZXTP2009ZTA
522-ZXTP2009ZTA
ZXTP2009ZTA
53Z Zetex
1a SOT89
IC35
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BV 20100
Abstract: 2N2369AU 2N2907AUB
Text: SURFACE MOUNT DEVICES PACKAGE PEAK LCC-28 VCE sa l DEVICE bvceo »C h FE TYPE VOLTS AMPS M IN/M AX SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 SPP0422 SPP0423 SPP0425 80 100 150 80 100 150 80 100 150 80 100 150 2.0 2.0 2.0 5.0
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LCC-28
SPP0404
SPP0405
SPP0407
SPP0410
SPP04I1
SPP0413
SPP0416
SPP0417
SPP0419
BV 20100
2N2369AU
2N2907AUB
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transistor bd 370
Abstract: No abstract text available
Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS
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NSB9435T1
r14525
NSB9435T1/D
transistor bd 370
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015
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MMBT1815
150mA
MMBT1015
MMBT1815L
MMBT1815-x-AC3-6-R
MMBT1815L-x-AC3-6-R
MMBT1815-x-AE3-6-R
MMBT1815L-x-AE3-6-R
MMBT1815-x-AN3-6-R
MMBT1815L-x-AN3-6-R
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)
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2SD1857
80MHz)
30MHz.
QW-R201-057
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Untitled
Abstract: No abstract text available
Text: TSC741 High Voltage Fast-Switching NPN Power Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 1050V IC VCE SAT Features 2.5A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability ● High Switching Speed
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TSC741
O-220
50pcs
TSC741CZ
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
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2SB1260
2SB1260
OT-89
100ms
QW-R208-017
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 3 FEATURES 1 2 *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1015
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MMBT1815
150mA
MMBT1015
OT-23
MMBT1815L
MMBT1815-AE3-R
MMBT1815L-AE3-R
OT-23
QW-R206-014
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2sa1015
Abstract: No abstract text available
Text: UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
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2SA1015
150mA
2SC1815
QW-R201-004
2sa1015
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2SD1875
Abstract: 2Sd-1875
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION
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2SD1857
80MHz)
2SD1875L-x-T92-B
2SD1875G-x-T92-B
2SD1875L-x-T92-K
2SD1875G-x-T92-K
2SD1875L-x-
T92-R
2SD1875G-x-
2SD1875
2Sd-1875
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2SD1918
Abstract: 80MHZ
Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage. BVCEO = 160V +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1
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2SD1918
O-252
80MHZ)
30MHz
2SD1918
80MHZ
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Untitled
Abstract: No abstract text available
Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics
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TSD2098A
OT-89
TSD2098ACY
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Untitled
Abstract: No abstract text available
Text: IL201 /I L202/IL203 Phototransistor Optocoupler FEATURES D im ensions in inches mm • High Current Transfer Ratio, 75% to 450% l3l • Minimum Current Transfer Ratio, 10% • Guaranteed at /p=1.0m A • High Collector-Em itter Voltage, BVCEO=70V f2l pin one ID
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IL201
L202/IL203
E52744
IL201/202/203
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FMMT718
Abstract: sot-23 15V vebo pnp
Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current
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FMMT718
-200mV
625mW
FMMT618
AEC-Q101
OT-23
J-STD-020D
DS31924
FMMT718
sot-23 15V vebo pnp
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ic 7495
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.
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ZXTP25060BFH
-85mV
ZXTN25060BFH
AEC-Q101
DS33374
ic 7495
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