SF25N20D4
Abstract: No abstract text available
Text: SF25N20D4 PRODUCT DATA SHEET 200 VOLT, 25 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated Parameter Rating Units 200 35 V A 28 A BVDSS ID @ VGS = 10V, TC = 25°C Drain to Source Breakdown Voltage
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SF25N20D4
O-254
SF25N20D4
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ID84
Abstract: 260uH LZP80N06P
Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools
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LZP80N06P
above25
to175
ID84
260uH
LZP80N06P
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AP70T03GH
Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
Text: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the
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AP70T03GH/J-HF
O-252
AP70T03GJ)
O-251
100us
100ms
Fig10.
AP70T03GH
AP70T03GJ
60V 60A TO-252 N-CHANNEL
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20n15gh
Abstract: ap20N15gh 20n15g AP20N15 TO252 rthjc TO-252 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Text: AP20N15GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 150V RDS ON 100mΩ ID G 20A S Description G Advanced Power MOSFETs from APEC provide the
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AP20N15GH
O-252
O-252
20N15GH
20n15gh
ap20N15gh
20n15g
AP20N15
TO252 rthjc
TO-252 MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
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AP60T10GS
Abstract: MOSFET VDS 20V TO-220
Text: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the
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AP60T10GS/P
O-220
O-263
AP60T10GP)
100us
100ms
AP60T10GS
MOSFET VDS 20V TO-220
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Untitled
Abstract: No abstract text available
Text: AP4880BGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant D D D D S S 30V RDS ON 9mΩ ID G SO-8 BVDSS
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AP4880BGM-HF
100us
100ms
125oC/W
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6679GR
Abstract: No abstract text available
Text: AP6679GR RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description Advanced Power MOSFETs from APEC provide the
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AP6679GR
O-262
O-262
6679GR
6679GR
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vn10K
Abstract: No abstract text available
Text: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process
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VN10K
VN10KN9
VN10KN3
vn10K
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Untitled
Abstract: No abstract text available
Text: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a
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VN2010L
bre60V
250mA
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tn0604n2
Abstract: No abstract text available
Text: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3
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TN0602N2
TN0604N2
TN0602N3
TN0604N3
SOW-20*
TN0604WG
TN0602ND
TN0604ND
TN06L
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TP06A
Abstract: No abstract text available
Text: TP06A ^ Supertex inc- Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV qgs ^DSfON If BVDSS/ max) V Order Number / Package g s (Ui ) (max) -60 V 3 .5 n -1.5A -2.4V -100V 3.5Î2 -1.5A -2.4V TO-39
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TP06A
TP0606N2
TP0610N2
TP0606N3
TP0610N3
O-220
TP0606N5
TP0610N5
TP0606N6
TP0606N7
TP06A
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TN07L
Abstract: No abstract text available
Text: ^ TN07L Supertex inc. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R DS ON Id <ON) VGS<th) b v dgs (max) (min) (max) TO-92 DICE* 20V 1 .3 0 0.5A 1.0V TN 0702N3 TN 0702ND ^MIL visual screening a vailable
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TN07L
0702N3
0702ND
TN07L
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □
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VN1206
VN1206L
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Untitled
Abstract: No abstract text available
Text: ^ Supertex inc. TP01L Low T h r e s h o ld P'Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BVdss ! BVdgs ^DS ON ^GS(th) ^D(ON) (max) (max) (min) TO-39 TO-92 TO-243AA* DICEt -20 V 4.0Î2
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TP01L
TP0102N2
TP0104N2
TP0102N3
TP0104N3
O-243AA*
TP0104N8
TP0102ND
TP0104ND
OT-89.
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VN1310N3
Abstract: No abstract text available
Text: Gì Super tex inc. VN13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ Order Number / Package ^ D S O N ' d io n i (max) (min) TO-39 TO-92 40V 8Ì2 0.5A VN1304N2 VN1304N3 60V 8 ii 0.5A VN1306N2 VN1306N3
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VN13A
VN1304N2
VN1306N2
VN1310N2
VN1304N3
VN1306N3
VN1310N3
VN1310N3
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VN0355N5
Abstract: No abstract text available
Text: VN0355 VN0360 — N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-3 TO-220 Dicet 550V 6Q 1.5A VN0355N1 VN0355N5 VN0355ND 600V 6Q 1.5A VN0360N1 VN0360N5 VN0360ND 1" MIL visual screening available
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VN0355
VN0360
VN0355N1
VN0360N1
O-220
VN0355N5
VN0360N5
VN0355ND
VN0360ND
VN0355/VN0360
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VN0116N3
Abstract: Vn0116 VN01-1 VN0116N2 VN0120ND VN0120N2
Text: VN0116 VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 TO-220 Dice+ 160V 10Q 0.4A VN0116N2 VN0116N3 VN0116N5 VN0116ND 200V
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VN0116
VN0120
VN0116N2
VN0120N2
VN0116N3
VN0120N3
O-220
VN0116N5
VN0120N5
VN0116ND
VN01-1
VN0120ND
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Untitled
Abstract: No abstract text available
Text: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D
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TP2105
O-236AB*
TP2105K1
OT-23:
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IRFC430
Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Text: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0
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T0213AA
STFJ120
STFJ130
STFJ140
STFJ220
STFK23Q
STFJ240
STFJ320
STFJ330
STFJ340
IRFC430
irfg 40
IRFC330
IRFC120
stf460
IRFCG40
IRFC420
IRFCF30
stf250
IRFC440
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Untitled
Abstract: No abstract text available
Text: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8
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O-243AA*
TN2540N8
TN2535ND
TN2540ND
OT-89.
TN25D
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Untitled
Abstract: No abstract text available
Text: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A
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-100V
O-243AA*
TP2506ND
TP2510ND
TP2S10N8
OT-89.
TP25A
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Untitled
Abstract: No abstract text available
Text: V N 2406 V N 2410 /f ie . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices max 2 40 V 240V Order Number 1 Package o" R ds(on ) B V Dqs 5 z BVdss I 10Î1 (min) TO-39 TO-92 TO-220 1.0A V N 24 0 6 B V N 24 0 6 L
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2410L
O-220
300ms
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Untitled
Abstract: No abstract text available
Text: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)
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TP2516
TP2520
O-243AA*
TP2520N8
TP2516ND
TP2520ND
-160V
-200V
TP2516/TP2520
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VN2780
Abstract: No abstract text available
Text: VN2780 Advanced Information N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^D S O N ^D(ON) b v dgs (max) (min) SO-8 Dice 800V 16Q 500mA VN2780LG VN2780ND Features Advanced DMOS Technology □ Free from secondary breakdown
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VN2780
VN2780LG
500mA
VN2780ND
500mA,
500mA
300jxs
VN2780
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