170M6462
Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
Text: High Speed Fuses Square Body Fuses General Information Introduction Square Body Contents Page Application Information 115-116 Volts IEC/UL Size 000,00 690/700 1*, 1, 2, 3 1*, 2, 3 4 23, 24 00, 1, 2, 3 00 1000 1*, 1, 2, 3 4 24 1*, 1, 2, 3 1250/1300 1000-2000
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157-iversal
1BS101
1BS102
1BS103
1BS104
SB00-D
170M6462
170H3006
170M7031
170H3027
170M8554
170M8608
170M2666
170M7636
170M7595
170M6814
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73247
Abstract: No abstract text available
Text: 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | Via E. Fermi, 40/42 20090 Assago, MI | Italia Tel. +39 02 93977.1 Fax +39 02 93904565 info@italweber.it www.italweber.it CATALOGO GENERALE | 2014 2014 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | | CATALOGO
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Untitled
Abstract: No abstract text available
Text: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed
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2N6754
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3phase winding data 3.7 kw to 110 kw
Abstract: J73KN-b-01 ICE 947 EN 60947 3 phase, 415v and 37 kw motor yd 803 J7KN110 3 phase, 415v and 270 kw motor EM- 546 motor wiring diagram 3 phase dol compressor Starting Current 7.5KW Motor 440v
Text: Motor Contactor J7KN Main contactor • AC & DC operated • Integrated auxiliary contacts • Screw fixing and snap fitting 35 mm DIN rail up to 45 kW • Range from 4 to 110 kW (AC 3, 380/415V) • Finger proof ( VBG 4) Accessories • front mounted single pole additional auxiliary contacts
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380/415V)
J7KN-10-01
J7KN-22-01
J7KN-150-11
J7KN-175-11
J7KN-24
J7KN-32
J7KN-40
J7KN-50
J7KN-62
3phase winding data 3.7 kw to 110 kw
J73KN-b-01
ICE 947 EN 60947
3 phase, 415v and 37 kw motor
yd 803
J7KN110
3 phase, 415v and 270 kw motor
EM- 546 motor
wiring diagram 3 phase dol compressor
Starting Current 7.5KW Motor 440v
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capacitor MKP 630V
Abstract: capacitor MKP 1000V 15n J 630V MKP 630V Philips MKP 378 cbb81 MKP 1000V 15n J 630V MKP PHILIPS 74224 15n J 630V. 378 MKP/MKP
Text: METALLIZED POLYPROPYLENE FILM BCcomponents Film Capacitors AC AND PULSE CAPACITOR MKP 378 MKP/MKP378 MKP AND MKP/MKP RADIAL POTTED TYPE VISHAY BCcomponents MKP 378 MKP/MKP 378 AC and Pulse metallized polypropylene film capacitor File under TPD sheet 190, HQN-384-17/102
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MKP/MKP378
HQN-384-17/102
HQN-384-17/102
MKP378-MKPMKP378
CP-R05053)
R05164
R06026)
capacitor MKP 630V
capacitor MKP 1000V
15n J 630V
MKP 630V
Philips MKP 378
cbb81
MKP 1000V
15n J 630V MKP
PHILIPS 74224
15n J 630V. 378 MKP/MKP
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3phase winding data 3.7 kw to 110 kw
Abstract: 1000v contactor J7KN-22-01 j7kn-32 J73KN-b-01 KNC 201 15 yd 803 knc 201 39 wiring diagram to hold contactor with NO, NC controls for 22kw motor
Text: Motor Contactor Main contactor • AC & DC operated • Integrated auxiliary contacts • Screw fixing and snap fitting 35 mm DIN rail up to 45 kW W • Range from 4 to 110 kW (AC 3, 380/415V) • Finger proof ( VBG 4) Accessoires • front mounted d single pole additional auxiliary contacts
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380/415V)
Conta7KN-10-01
J7KN-22-01
J7KN-150-11
J7KN-175-11
J7KN-24
J7KN-32
J7KN-40
J7KN-50
J7KN-62
3phase winding data 3.7 kw to 110 kw
1000v contactor
J7KN-22-01
j7kn-32
J73KN-b-01
KNC 201 15
yd 803
knc 201 39
wiring diagram to hold contactor with NO, NC
controls for 22kw motor
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batery
Abstract: SPMS506-01 SPMS506-01F SPMS506-01FM SPMS506-01M pm0011
Text: PRELIMINARY SPMS506-01 & -01M SPMS506-01F & -01FM SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Space Flight Proven Heritage. • High Charge/Discharge Current.
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SPMS506-01
SPMS506-01F
-01FM
-55oC
125oC
SPMS506-01M
SPMS506-01FM
batery
SPMS506-01
SPMS506-01F
SPMS506-01FM
SPMS506-01M
pm0011
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mw 137 600g
Abstract: transistor 5cw 069UR1S0250B bs88-4 070US3U1400B 110UR2S0800B transistor 6cw 069UR1S0350B transistor 5cw 61 IXYS CATALOGUE
Text: ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES WESTCODE CATALOGUE Westcode Semiconductors Ltd Issue 6 – March 2005 ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES Contents 1. Introduction 2 2. Applications & Definitions
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SPMS506-01 & -01M SPMS506-01F & -01FM SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Space Flight Proven Heritage. • High Charge/Discharge Current.
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SPMS506-01
SPMS506-01F
-01FM
-55oC
125oC
SPMS506-01M
SPMS506-01FM
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Magnetic Field Sensor FLC 100
Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
Text: Product Catalogue 2013 Circuit Breakers Contactors & Overloads Motor Protection Photovoltaic Fusegear Weatherproof Switchgear Isolators & Switching Relays & Timers Pilot Devices Metering Enclosures Cable Accessories Surge & Safety Lighting CONTENTS: IPD Industrial Products is a proudly Australian owned
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GTCA28-272L-R03
Abstract: GTCA28-122M-R03 GTCA28-252M-R03 GTCA28-212M-R03 GTCA28-801M-R05 GTCA28-402M-R03
Text: Gas Discharge Tubes Gas Discharge Tubes TE Circuit Protection’s GDTs Gas Discharge Tubes are placed in front of, and in parallel with, sensitive telecom equipment such as power lines, communication lines, signal lines and data transmission lines to help protect them from
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Untitled
Abstract: No abstract text available
Text: Gas Discharge Tubes Gas Discharge Tubes TE Circuit Protection’s GDTs Gas Discharge Tubes are placed in front of, and in parallel with, sensitive telecom equipment such as power lines, communication lines, signal lines and data transmission lines to help protect them from
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pronic t85 br
Abstract: pronic t85 eaton T85 rotary Switch pronic r13 t85 55 pronic r13 SS510 MST205N MST105D pronic 2GK54-73
Text: Product Numerical Index NTE Page Type No. No. Description NTE Page Type No. No. Description NTE Page Type No. No. Description 54−001 54−002 54−003 54−004 54−005 1 1 5 5 2 Toggle, SPST, 15A, 125VAC Toggle, SPDT, 15A, 125VAC Toggle, DPDT, 15A, 125VAC
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125VAC
12VDC
pronic t85 br
pronic t85
eaton T85 rotary Switch
pronic r13 t85 55
pronic r13
SS510
MST205N
MST105D
pronic
2GK54-73
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Untitled
Abstract: No abstract text available
Text: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK5N100
AOK5N100
AOK5N100L
O-247
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Untitled
Abstract: No abstract text available
Text: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK5N100
AOK5N100
AOK5N100L
O-247
Drain-S00
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Untitled
Abstract: No abstract text available
Text: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
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AOT5N100/AOTF5N100
AOT5N100
AOTF5N100
AOT5N100L
AOTF5N100L
O-220
O-220F
AOTF5N100
Maximum00
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Untitled
Abstract: No abstract text available
Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5639A
IRG4BC20SPbF
O-220AB
O-220AB
I4BC20SPbF
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Untitled
Abstract: No abstract text available
Text: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
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AOT5N100/AOTF5N100
AOT5N100
AOTF5N100
AOT5N100L
AOTF5N100L
O-220
O-220F
AOTF5N100
Maxi00
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Untitled
Abstract: No abstract text available
Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5639A
IRG4BC20SPbF
O-220AB
O-220AB
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sspc 270V
Abstract: 53508 BY 550 1000V 5A
Text: 53508 Series SOLID STATE POWER CONTROLLERS PRELIMINARY Features: • 270V, 10A Operation • Power MOSFET with Low On-State Resistance • Controlled Soft Turn-On • I²t Overload Protection • Short Circuit protection • External Trip Profile Programming 30% to 100%
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MIL-PRF-38534,
sspc 270V
53508
BY 550 1000V 5A
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OA 70 diode
Abstract: 1000v 35amp I222-00
Text: 0J1NIREL CORP 43E; ]> hTÔ^QÎB 0000526 1 « O M N I O M 35N 1Û C O M 15N 50C O M 30N 20C Q M 5N 100C POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE 100V Thru 1000V, Up To 35 Amp, N-Channe^ MOSFET With Low Rds ON> Characteristics». in FEATURES
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OCR Scan
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O-258AA
300/jsec,
OA 70 diode
1000v 35amp
I222-00
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fast recovery 35amp
Abstract: Motorola TO92 OM15N50C OM30N20C OM35N10C OM5N100C OM803
Text: OflNIREL CORP 43E D m ^70^073 0Q00S26 1 « O IIN I QM35N10C OM15N50C OM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE - r 39-13 100V Thru 1000V, Up To 35 Amp, N-ChannetMOSFET With Low Rds 0m Characteristics» Ml FEATURES • Isolated H erm etic M etal P ackage
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OCR Scan
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0Q00S5a
O-258AA
QM35N10C
OM15N50C
OM30N20C
OM5N100C
OM803
300/jsec,
fast recovery 35amp
Motorola TO92
OM35N10C
OM5N100C
OM803
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2903D
Abstract: irgddn200m12
Text: International ^R ectifier PD -9.1170 IRGDDN200M12 IRGRDN200M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK • Rugged Design •S im p le gate-drive .Sw itching-Loss Rating includes all "tail" losses •S h o rt circuit rated Low conduction loss IGBT V Œ = lc =
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IRGDDN200M12
IRGRDN200M12
2903D
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Untitled
Abstract: No abstract text available
Text: PRODUCT Æ lttran CÂTÂl ' N-CHANNEL ENHANCEMENT MOS FET 1000V. 9A, 1.4 n S D F 9 N 100 JEA S D F 9 N 100 JEB S D F 9 N 100 JEC 5DF9N100 JED FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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OCR Scan
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5DF9N100
MIL-S-19500
A48-1
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