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    diode BY253

    Abstract: BY255 diode diode by251 diode BY255 DIODE 3A 600V diode BY254 BY255 BY251 BY252 BY253
    Text: BY25x Series Features: • • • • • High efficiency, low VF. High current capability. High reliability. High surge current capability. Low power loss. DO-201AD Dimensions : Inches Millimetres Mechanical Data: Cases Lead Polarity High temperature soldering guaranteed


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    PDF BY25x DO-201AD MIL-STD-202, diode BY253 BY255 diode diode by251 diode BY255 DIODE 3A 600V diode BY254 BY255 BY251 BY252 BY253

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BY254

    Abstract: No abstract text available
    Text: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF DO-201AD BY251 BY254 MIL-STD-202, 260/10s BY25X 300us BY254

    Untitled

    Abstract: No abstract text available
    Text: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF BY251 BY254 DO-201AD MIL-STD-202, BY25X Week25 300us

    BY251

    Abstract: BY252 BY253 BY254 BY255 5CW MARKING
    Text: E RoHS TAIWAN SEMICONDUCTOR 3.0 AMPS. Silicon Rectifiers DO-201 AD T C O M P L IA N C E - BY251 - BY255 32S- - 1.C Í25.-1I V N. .157 ^¿ij IÎA . F e atures_ ^ ❖ ❖ 4^ •> High efficiency, Low VF


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    PDF -32J- BY251 BY255 by255) 11CUCÃ BY252 BY253 BY254 BY255 5CW MARKING

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s BY251 - BY255 3.0 AMPS. Silicon Rectifiers RoHS DO-201 AD C O M P L IA N C E T — -. 197 IÎA . Features_ •fr ❖ ❖ <■ <• ❖ High efficiency, Low VF High current capability High reliability


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    PDF BY251 BY255 DO-201 33F70Î BY255)

    BY254

    Abstract: BY251 BY252 BY253
    Text: IM TAIWAN SEMICONDUCTOR BY251 - BY254 3.0 AMPS. Silicon Rectifiers DO-2Q1AD RoHS COMPLIANCE • m - .220 5.6 .197 (5.0) DIA. , 1.0(25.4) MIN. Features <f- -v” -Y- High efficiency, Low VF High current capability High reliability High surge current capability


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    PDF BY251 BY254 MIL-STD-202, BY254) BY252 BY253