Untitled
Abstract: No abstract text available
Text: BYT 60P-200→400 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case A K SOD93 Plastic SUITABLE APPLICATIONS: FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS
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60P-200400
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SCT 380
Abstract: AN2351 32-entry BYT 521 MSC8101
Text: Freescale Semiconductor Application Note AN2351 Rev. 1, 7/2005 Using the MSC8101 Serial Interface By Barbara Johnson The MSC8101 CPM multiplexing logic CMX connects the universal test and operations PHY interface for ATM (UTOPIA) or the media-independent interface (MII) physical layers to the
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AN2351
MSC8101
SCT 380
AN2351
32-entry
BYT 521
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AN427
Abstract: HC11 M68HC11 MC68HC11
Text: Freescale Semiconductor Order this document by AN427/D Freescale Semiconductor, Inc. AN427 MC68HC11 EEPROM Error Correction Algorithms in C By Richard Soja Freescale Ltd. East Kilbride, Glasgow Introduction This application note describes a technique for correcting 1-bit errors
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AN427/D
AN427
MC68HC11
M68HC11
AN427
HC11
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Untitled
Abstract: No abstract text available
Text: s G S-THOMSON S'iC D 1I 7 ^ 5 3 7 O T-0¿-/Í d 59C 0 2 1 3 6 T H O M S O N -C S F QGGEiat, T BYT 12-600-* 800, R DIVISION SEMICONDUCTEURS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION VrrM 600 — 800 V lF(AV) 12 A at Tease 90°C
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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T12P
Abstract: byt12
Text: BYT 12 P/600A/800A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passivated • Low sw itch on pow er losses • Good so ft recovery behaviour • Fast forw ard recovery tim e • Fast reverse recovery tim e
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P/600A/800A
D-74025
24-Jun-98
T12P
byt12
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30PI-800
Abstract: diodes byt Byt 12 800 BYT12PI600 10-32 UNF DO-220 ISOTOP BYT12PI-600 DOP31 12P600A
Text: GENERAL PURPOSE & INDUSTRIAL rz r: scsthomson ^ 7# MO»I[LE gra(MD(gS RECTIFIER DIODES «SUPERSWITCH 2» ULTRA-FAST RECOVERY RECTIFIER DIODES < 100 A I VRRM = 600. 800 V Type 'o trr < 65 ns V RRM •f s m VF / lF N N BYT 08P-600 N N BYT 08PI-600 BYT 08P-800
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08P-600
08P-800
08PI-600
08PI-800
BYT12PI-600
12PI-800
12P-600
12P-800
30P-600
30P-800
30PI-800
diodes byt
Byt 12 800
BYT12PI600
10-32 UNF
DO-220
ISOTOP
DOP31
12P600A
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fast recovery diode 1a
Abstract: No abstract text available
Text: fZ7 SGS-THOMSON ILIOTMtOS BYT 30-600/800 FAST RECOVERY RECTIFIER DIODES • ■ ■ ■ HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SUITABLE A PPLICATIO N S ■ FREE WHEELING DIODE IN CONVERTERS
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BYT 45 J
Abstract: BYTI2P
Text: Te m ic BYT 12P/600A/800A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passivated • L ow sw itch on pow er losses • Good soft recovery behaviour • Fast forward recovery time • Fast reverse recovery time
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12P/600A/800A
BYT 45 J
BYTI2P
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diodes byt
Abstract: BYT 01-200 400 DO-220I byt 400 DO-220 100-C 60P-400 08P-300 diodes byt 400 230PI
Text: / IT SGS-THOMSON * 7# GENERAL PURPOSE & INDUSTRIAL M » [i[L II g r a « § RECTIFIER DIODES «SUPERSWITCH 2» ULTRA-FAST RECOVERY RECTIFIER DIODES < 100 A I V rp m = 200, 300, 400 V Type •o V RRM •f s m VF I 'F ■r W r r m tr rfl Tj = 100°C 10 ms
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100-C
08P-200
08P-300
08P-400
08PI-200
08PI-300
08PI-400
230PI
diodes byt
BYT 01-200 400
DO-220I
byt 400
DO-220
60P-400
diodes byt 400
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cecc 50000
Abstract: BYX61-200 byw88200 RECTIFIER DIODES SGS diodes byt BYX61-100 ESM244-600R BYX65-400 BYX61-400R ESM244-600
Text: /IT SGS-THOMSON * 7# GENERAL PURPOSE & INDUSTRIAL M » [i[L II g r a « § RECTIFIER DIODES «SUPERSWITCH 2» ULTRA-FAST RECOVERY RECTIFIER DIODES < 100 A I V rp m = 200, 300, 400 V Type •r W r r m Tj = 100°C trrfl t|RM Tj = 100°C >RM Tj = 100°C max
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100-C
08P-200
08P-300
08P-400
08PI-200
08PI-300
08PI-400
BYX61-100
BYX61-200
BYX61-400
cecc 50000
byw88200
RECTIFIER DIODES SGS
diodes byt
ESM244-600R
BYX65-400
BYX61-400R
ESM244-600
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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Untitled
Abstract: No abstract text available
Text: r z 7 * 7 # S C S TH O M S O N ^ D i© [lL i g f[ 1@iD 0 i B Y T 3 0 P I-600/800 FAST RECOVERY RECTIFIER DIODES • ■ ■ . ■ HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE T U R N -O F F SW ITCHING
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I-600/800
30PI-600/800
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Untitled
Abstract: No abstract text available
Text: Temic Semiconductors SOD64 DO 220 Fast Power Rectifiers Part Number Vr Vrrm V I fav ÏFSM A A 600 800 1000 600 800 1000 600 800 1000 600 800 1000 1300 600 800 1000 1300 200 400 200 400 8 8 8 12 12 12 4 4 4 8 8 8 5 15 15 15 5 8 8 15 15 50 50 50 75 75 75 80
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BYT08P/600A
BYT08P/800A
BYT08P/1000A
BYT12P/600A
BYT12P/800A
BYT12P/1000A
BYT85/600
BYT85/800
BYT85/1000
BYT86/600
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byx 21
Abstract: byx 200 TI 65300 RPR2040 diodes byt RPR2040R Thomson-CSF diodes de redressement Diodes de redressement
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Types 1N 3899, R A IN 3900, (R) A1N 3901, (R) A1N 3902, (R) A1N 3903, (R) BYX 63-600, (R) (A) (V) (R) (R) (R) (R) (R) 30 A / BYX BYX BYX BYX BYX BYX 40 A / RPR RPR RPR
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-15A/â
byx 21
byx 200
TI 65300
RPR2040
diodes byt
RPR2040R
Thomson-CSF diodes de redressement
Diodes de redressement
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byx 61 400
Abstract: byx 33 400 BYX61-50 Thomson-CSF rectifier GR606 diodes byt
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types 6 A / Tcase = 85°C ESM ESM ESM ESM ESM 255-50 R 255-100 R 255-200 R 255-300 R 255-400 R 10 20 40 60 80 zzzzz 765-10 765-20 765-40 765-60 765-80 R (R) (R) (R) (R) 1N 3889, (R)
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CB-150
CB-33)
byx 61 400
byx 33 400
BYX61-50
Thomson-CSF rectifier
GR606
diodes byt
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Untitled
Abstract: No abstract text available
Text: s S^ c G S-TH O M SO N D | 7 ^ 2 3 7 GQG2177 T Q 1HO M SO N-CSF - c y - 1 / 7 BYT 6 1 . 6 1 B 6 0 0 - . 1 0 0 0 l R DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH h ig h v o l t a g e fa st r ec o ve r y r e c t ifie r s REDRESSEURS RAPIDES HAUTE TENSION 59C
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GQG2177
200ns
CB-262)
CB-19)
CB-428)
CB-244
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BYT 1000
Abstract: t03h
Text: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON 59C 021 81 Q THOMSON-CSF 0 7 ^ 0 3 “/ 7 B Y T 6 5 .6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 0 0 _^1 0 0 0 ,CR HIGH VOLTAGE FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES HAUTE TENSION HIGH VOLTAGE SUPERSWITCH
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03-i7
B-600
100OC_
BYT 1000
t03h
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30P60
Abstract: No abstract text available
Text: SGS-THOMSON ê œ H J C T fM O û S B Y T 6 0 P -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING Cathode connected to case DOP 3 (Plastic iUITABLE APPLICATIO N S
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60P-200
30P-600/800
30P60
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Untitled
Abstract: No abstract text available
Text: C T S C S -T H O M S O N * 7# . ISD g3@ il[LE(&u'i«U(gi B Y T 6 0 P -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SOD93 (Plastic SUITABLE APPLICATIONS: ■ FREE WHEELING DIODE IN CONVERTERS
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Untitled
Abstract: No abstract text available
Text: SGSTHOMSON O û ^ i[ L i g ¥ œ « S B Y T 3 0 -6 0 0 /8 0 0 FAST RECOVERY RECTIFIER DIODES . • ■ . HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING Cathode connected to case SUITABLE APPLICATIO N S
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2D 1002
Abstract: KU1004F 10MSA Diodes de redressement KU1008F
Text: fast recovery rectifier diodes ^ 100 A diodes de redressement rapide ^ 100 A Types 100 A KU KU KU KU KU KU KU KU KU / 1002 1003 1004 1006 1008 1010 1012 1014 1015 Tqqsq F, F, F, F, F, F, F, F, F, >0 Vr r m •f s m 10 ms vF A (V) (A) (V) 60°C Tj / if max
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UN3000
2D 1002
KU1004F
10MSA
Diodes de redressement
KU1008F
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BYT 45 J
Abstract: stc 8000 h
Text: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON Q 59C 02181 T H O M S O N -C S F B 0 7 ^ 0 3 “/7 Y T 6 5 . 6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 _ ^ 1 , C R HIGH VOLTAGE FAST RECOVERY RECTIFIERS R E D R ESSEU R S RA PID ES H AU TE TENSION HIGH VOLTAGE
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7TETE37
CB-425)
CB-262
CB-262)
i0840
CB-19)
CB-428)
CB-244
BYT 45 J
stc 8000 h
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Untitled
Abstract: No abstract text available
Text: G S-THQ M SQ N S ÌC D | OGOaOET fl 7 ^ 2 3 7 V THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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DIODE REDRESSEMENT
Abstract: JAF-1-40 Diodes de redressement BYT 12 DIODE J-RFV-2-05 J-RFV-2-15 J-RFV-3-05 J-RFV-3-15 J-RFV-7-05 J-RFV-7-10
Text: G S-THQ M SQ N S ÌC D | V OGOaOET fl 7 ^ 2 3 7 THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ
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ob-20
ot-40
J-RF-4-20
J-RF-4-40
jrf-4-60
J-RF-12-40
JRF-12-Â
JRF-20-20
JRF-20-40
J-RF-20-60
DIODE REDRESSEMENT
JAF-1-40
Diodes de redressement
BYT 12 DIODE
J-RFV-2-05
J-RFV-2-15
J-RFV-3-05
J-RFV-3-15
J-RFV-7-05
J-RFV-7-10
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