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    BYTES Search Results

    BYTES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1852D/B Rochester Electronics LLC CDP1852D/B - Byte-Wide Input/Output Port Visit Rochester Electronics LLC Buy
    X28C010W Renesas Electronics Corporation 5V, Byte Alterable EEPROM Visit Renesas Electronics Corporation
    X28C512W Renesas Electronics Corporation 5V, Byte Alterable EEPROM Visit Renesas Electronics Corporation
    X28HC64JIZ-70T1 Renesas Electronics Corporation 64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM Visit Renesas Electronics Corporation
    X28HC64JZ-12T1 Renesas Electronics Corporation 64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM Visit Renesas Electronics Corporation

    BYTES Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10A005 Bytes 10.0 AMP SILICON RECTIFIERS Original PDF
    10A05 Bytes 10.0 AMP SILICON RECTIFIERS Original PDF
    10A1 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    10A10 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    10A2 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    10A4 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    10A6 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    10A8 Bytesonic Electronics 10.0 A Silicon Rectifier Original PDF
    15KE Bytes 1500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS Original PDF
    1.5KE10 Bytesonic Electronics TVS Diode, Single, Unidirectional, 8.1V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE100 Bytesonic Electronics TVS Diode, Single, Unidirectional, 81V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE100A Bytesonic Electronics TVS Diode, Single, Unidirectional, 85.5V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE100C Bytesonic Electronics TVS Diode, Single, Bidirectional, 81V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE100CA Bytesonic Electronics TVS Diode, Single, Bidirectional, 85.5V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE10A Bytesonic Electronics TVS Diode, Single, Unidirectional, 8.55V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE10C Bytesonic Electronics TVS Diode, Single, Bidirectional, 8.1V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE10CA Bytesonic Electronics TVS Diode, Single, Bidirectional, 8.55V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE11 Bytesonic Electronics TVS Diode, Single, Unidirectional, 8.92V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE110 Bytesonic Electronics TVS Diode, Single, Unidirectional, 89.2V, 1500W Min, DO-201, 2-Pin Original PDF
    1.5KE110A Bytesonic Electronics TVS Diode, Single, Unidirectional, 94V, 1500W Min, DO-201, 2-Pin Original PDF
    ...

    BYTES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SN75LVDS84A FLATLINK TRANSMITTER SLLS354C – MAY 1999 – REVISED NOVEMBER 1999 D D D D D D D D D D D D 21:3 Data Channel Compression at up to 196 Million Bytes per Second Throughput Suited for SVGA, XGA, or SXGA Data Transmission From Controller to Display


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    SN75LVDS84A SLLS354C SN75LVDS84. LVDS84 PDF

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


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    TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 PDF

    Part Marking STMicroelectronics TSSOP8

    Abstract: M95256
    Text: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 bytes) of EEPROM – Page size: 64 bytes


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    M95256-W M95256-R M95256-DR M95256-DF 256-Kbit M95256-W M95256DR M95256-DF 200-year Part Marking STMicroelectronics TSSOP8 M95256 PDF

    w1p84

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM82 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FM82 Considerations for using Motor Control Circuit PMD:Programmable Motor Driver Following considerations are necessary for writing data to electrical lead angle timer (ELDEG) and reading 2 bytes


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    TLCS-870/C1 TMP89FM82 0x017F 0x0000 w1p84 PDF

    CHL8318-20

    Abstract: chl8318 phase controller trigger
    Text: Digital Multi-Phase Buck Controller DESCRIPTION • Compatible with IR ATL Drivers and tri-state Drivers  9 bytes of NVM storage available for customer use  +3.3V supply voltage; 0ºC to 85ºC Ambient operation  RoHS Compliant, MSL level 1 package


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    CHL8318-20 CHL8318-20 September28, chl8318 phase controller trigger PDF

    66C367PE

    Abstract: No abstract text available
    Text: SLE 66C367PE 8/16-Bit Security Controller with enhanced instruction set for large memories in 0.22 µm CMOS Technology 196-bytes ROM,4352 bytes RAM, 36-bytes EEPROM Dual Key Triple DES Sho rt Pro duc t O ve r vi e w May 2011 Chi p C ard & Sec u ri t y SLE 66C367PE


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    66C367PE 8/16-Bit 196-Kbytes 36-Kbytes 66C367PE 196kByte 36kByte PDF

    CAT5221WT

    Abstract: No abstract text available
    Text: CAT5221 Dual Digitally Programmable Potentiometer DPP with 64 Taps and I2C Interface http://onsemi.com Description The CAT5221 is two Digitally Programmable Potentiometers (DPPs) integrated with control logic and 16 bytes of NVRAM memory. Each DPP consists of a series of 63 resistive elements


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    CAT5221 CAT5221/D CAT5221WT PDF

    M95M01-D

    Abstract: M95M01-DF marking M95 m01d
    Text: M95M01-DF M95M01-R 1-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mb (128 bytes) of EEPROM – Page size: 256 bytes SO8 (MN) 150 mil width ■ Write


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    M95M01-DF M95M01-R 200-year M95M01-D marking M95 m01d PDF

    SOX28

    Abstract: KDS Crystals DOC KDS Crystals through hole
    Text: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external


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    M41ST87Y M41ST87W M41ST87Y: M41ST87W: SOX28 KDS Crystals DOC KDS Crystals through hole PDF

    relay 12v 6a

    Abstract: relay 24v 5a 12v relay 12V electromechanical relay knife edge isolation relay railway relay dc 24v ac 250v 16a 230V ac relay AC300V Z80000
    Text: interface flare Coupling relays The safe way to achieve a perfect interface in process applications. In the microchip age of bits and bytes, one might assume that there is no place left for electromechanical relays. Far from it! In control, transportation and


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    35-mm relay 12v 6a relay 24v 5a 12v relay 12V electromechanical relay knife edge isolation relay railway relay dc 24v ac 250v 16a 230V ac relay AC300V Z80000 PDF

    m955

    Abstract: M9551 M95512-DF
    Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 bytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width


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    M95512-W M95512-R M95512-DR M95512-DF 512-Kbit M95512-W M95512DR M95512-DF 200-year m955 M9551 PDF

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu PDF

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3581D AT49BV320D AT49BV320DT SA70 AT49BV PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    AT45DB081D

    Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
    Text: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page


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    66MHz 256-Bytes 264-Bytes 256-Bytes 256/264-Bytes/Page) 256-Bytes) 64-Kbytes) 256-/264-Bytes) 3596M AT45DB081D JEP106 PA10 PA11 AT45DB081D-MU-SL954 PDF

    c4460

    Abstract: TMSC44 TMS320C40GFL Texas Instruments processor selection guide 1994 120M 336M LD31 TMS320C44 TMS320C44-50 TMS320C44-60
    Text: TMS320C44 DIGITAL SIGNAL PROCESSOR SPRS031C − AUGUST 1994 − REVISED MARCH 2004 D Highest Performance Floating-Point Digital D D D D D D D D D Signal Processor DSP − TMS320C44-60: 33-ns Instruction Cycle Time, 330 MOPS, 60 MFLOPS, 30 MIPS, 336M Bytes/s


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    TMS320C44 SPRS031C TMS320C44-60: 33-ns TMS320C44-50: 40-ns IEEE-754 40-Bit 32-Bit c4460 TMSC44 TMS320C40GFL Texas Instruments processor selection guide 1994 120M 336M LD31 TMS320C44 TMS320C44-50 TMS320C44-60 PDF

    BSC 68H

    Abstract: SCK 055 TSOP 28 SPI memory Package flash AT45DB161 AT45DB161B AT45DB161-CC AT45DB161-RC PA10 PA11 AT45DB161-TC
    Text: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB161 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory


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    AT45DB161 528-byte 2224B 03/01/xM BSC 68H SCK 055 TSOP 28 SPI memory Package flash AT45DB161 AT45DB161B AT45DB161-CC AT45DB161-RC PA10 PA11 AT45DB161-TC PDF

    X76F200

    Abstract: No abstract text available
    Text: ISO 7816 Compatible X76F200 2K 256 x 8 bit Secure SerialFlash FEATURES DESCRIPTION • 64-bit Password Security • One Array 240 Bytes Two Passwords (16 Bytes) —Read Password —Write Password • Programmable Passwords • Retry Counter Register —Allows 8 tries before clearing of the array


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    X76F200 64-bit 32-bit X76F200 PDF

    80C51

    Abstract: 80C52 PDIL40 PLCC44 TS80C51U2 TS83C51U2 TS87C51U2 VQFP44 16kx8 ram
    Text: TS80C51U2 TS83C51U2 TS87C51U2 Double UART 8-bit CMOS Microcontroller 1. Description TS80C51U2 is high performance CMOS ROM, OTP and EPROM versions of the 80C51 CMOS single chip 8-bit microcontroller. The TS80C51U2 retains all features of the 80C51 with extended ROM/EPROM capacity 16 bytes , 256 bytes


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    TS80C51U2 TS83C51U2 TS87C51U2 TS80C51U2 80C51 80C52 PDIL40 PLCC44 TS83C51U2 TS87C51U2 VQFP44 16kx8 ram PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.


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    TC58V64FT/DC 64-MBIT TC58V64FT/DC 016-bit) 528-byte 44/40-P-400-0 PDF

    74LS74N

    Abstract: 6502a M6502 UM6512C 4LS74 UM6502C um6502 M6507
    Text: U IVS C UM 6502 0 7 12 8-bit Microprocessor Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Addressable memory range of up to 64K bytes "R ead y" input Direct memory access capability Bus compatible with MC6800 Choice of external or on-board clocks


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    MC6800 UM6502/UM6507/UM6512 UM6502 UM6507 UM6512 UM6502B UM6512B UM6502C UM6512C 74LS74N 6502a M6502 4LS74 M6507 PDF

    PD4A

    Abstract: No abstract text available
    Text: _ bq3285 UIMITRODE- Real-Time Clock RTC Features >• Direct clock/calendar replace­ ment for IBM AT-compatible computers and other applications >- Functionally compatible with the DS1285 ~ Closely matches MC146818A pin configuration >• 114 bytes of general nonvolatile


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    bq3285 24-hour 24-pin DS1285 MC146818A bq3285 PD4A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TMP93CM40A TMP93CM41A TLCS-900 Seríes Low Voltage/Low Power 4 External memory expansion CMOS 16-bit Microcontrollers • Can be expanded up to 16M bytes (for both programs and data). TMP93CM40AF/TMP93CM41AF • A M 8/16 pin (select the external data bus width).


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    TLCS-900 16-bit TMP93CM40AF/TMP93CM41AF 10-bit DD33b31 TMP93CM40A TMP93CM41A TMP93CM40A/M41 PDF

    M68HC11 reference manual

    Abstract: Motorola 52 pin PLCC EEPROM MCU MC68HC11E9 52 PIN PLCC MOTOROLA
    Text: Order th is document by BR775/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC711E9 Technical Summary 8-Bit Microcontroller Introduction The MC68HC711E9 high-performance microcontroller MCU is an electrically programmable ROM (EPROM)-based version of the MC68HC11E9 and includes similar features — 12K bytes of


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    BR775/D MC68HC711E9 MC68HC711E9 MC68HC11E9 MC68HC711E9, M68HC11 MC68HC11l 52-Pin M68HC11 reference manual Motorola 52 pin PLCC EEPROM MCU MC68HC11E9 52 PIN PLCC MOTOROLA PDF