Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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BYV 200
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV 200
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BYV32
Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-100
JESD22-B102D
J-STD-002B
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BYV32
Abstract: BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
J-STD-020C
O-263AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
O-263AB
08-Apr-05
JESD22-B102D
J-STD-002B
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BYVB32-200-E3
Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYVB32-200-E3
JESD22-B102D
J-STD-002B
Diode BYV 95
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BYV32-200E
Abstract: Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
BYV32-200E
Diode BYV 95
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BYV32
Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
JESD22-B102
J-STD-002
BYV 35 C
BYV 35
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Untitled
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
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PDF
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BYV32-150
Abstract: byv 20 BYV32100
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020C,
ITO-220AB
2002/95/EC
BYV32-150
byv 20
BYV32100
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BYV32-200E
Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-200E
JESD22-B102
J-STD-002
byv325
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BYV27 Spice
Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
Text: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m
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BYV27
TM1iC63-HN
25-Nov-03
D-74025
BYV27 Spice
BECKMAN
transistor 702m
BYV27-200
85740
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Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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BYV 200
Abstract: BYV 35 byv ultra Fast Recovery Rectifier
Text: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0
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esja
Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35
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ESJA82-12
esja
ESJC
ESJA82-12
BYV 35
esjc 0309
ESJA 52-12
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ESJA
Abstract: ESJC
Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C
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DD21liD
ESJA
ESJC
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SCHOTTKY bys 92-50
Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6
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BYV25
Abstract: No abstract text available
Text: FZ 7 SCS-THOMSON »7# BSB eB aiisfE? BOies BYV 255(V -50 —» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CONDUCTION LOSSES • NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ INSULATED : capacitance 55pF
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st 9548
Abstract: No abstract text available
Text: BYV 28/— Vishay Telefunken ▼ Ultra Fast Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristic • Low forw ard voltage • Ultra fa st recovery tim e • G lass passivated junction • H erm etically sealed package \ Applications Very fa st rectifier e.g. fo r sw itch m ode p ow er supply
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BYV28/50
BYV28/200
D-74025
24-Jun-98
st 9548
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BYW 200
Abstract: BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45
Text: Type Vrrm I favm tA = 25°C V A 34032T7 D0D135E Sbû b lE » eupec Epitaxial rectifier diodes Ifsm vF Ir 10 ms, tv j max ¡F = • f a v m = 25 °C VR = Vrrm tvj — tVj max A V mA BYR 29-800 800 8 60 BYT 79-500 500 14 BYV 29-400 400 trr tvj max ns °c IUPEC
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34032t7
d0d135e
57/58-E
BYW 200
BYY 56
BYV 200
byw 150
MQ-5
byv 25-1
BYV 30 45
0 280 142 300
BYV 35
BYV 43 45
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BYV 200
Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-1508-100,
BYV 200
diodes byw 92
FZJ 101
99P-200
byw 150
BYW 200
diodes byw 08 200
BYV 35
diodes byw 51 200
BYV 35 C
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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Untitled
Abstract: No abstract text available
Text: IBSAGrlBB ULTR'A-FAST-RECOVERY-RECTIFIER DIODES V RRM Typé ,V > I I FAV FSM (A (A) V at I F F (V) (A) t rr (ns) T jmax <C >. 200 300 400 500 600 800 900 1000 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 170 170 170 170 170 100 100 100 <1.5 <1.5 <1.7 <1.7 <1.7
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BYV 200
Abstract: BYV 35 C BYV 35 10-100T 20-600T 600t BYV 20 200T 10500T
Text: h LBSAGrlBB ÜLTRA-FAST-RECOVERY-RECTIFIER DIODES n M " V RRM V te rr (ns) jmax (C) Case JEDEC T0-220 AB 10-100T 10-150T 10-200T 10-300T 10-400T 10-500T 10-600T 100 150 200 300 400 500 600 5.0 5.0 5.0 5.0 5.0 5.0 5.0 120 120 120 120 120 120 120 1.03 1.03
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10-100T
10-150T
10-200T
10-300T
10-400T
10-500T
10-600T
20-200T
20-300T
20-400T
BYV 200
BYV 35 C
BYV 35
20-600T
600t
BYV 20 200T
10500T
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