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    BYV 45 Price and Stock

    WeEn Semiconductor Co Ltd BYV34-500,127

    Rectifiers RAIL REC-EPI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV34-500,127 11,282
    • 1 $1.15
    • 10 $0.925
    • 100 $0.761
    • 1000 $0.687
    • 10000 $0.66
    		Buy Now

    WeEn Semiconductor Co Ltd BYV44-500,127

    Rectifiers RAIL REC-EPI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV44-500,127 3,841
    • 1 $1.27
    • 10 $0.871
    • 100 $0.777
    • 1000 $0.756
    • 10000 $0.756
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    Vishay Intertechnologies BYV32-200-E3/45

    Rectifiers 18 Amp 200 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV32-200-E3/45 1,818
    • 1 $1.71
    • 10 $0.921
    • 100 $0.816
    • 1000 $0.718
    • 10000 $0.71
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    Vishay Intertechnologies BYVF32-200-E3/45

    Rectifiers 18 Amp 200 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYVF32-200-E3/45 1,737
    • 1 $1.16
    • 10 $0.832
    • 100 $0.747
    • 1000 $0.729
    • 10000 $0.689
    		Buy Now

    Vishay Intertechnologies BYV32-100-E3/45

    Rectifiers 18 Amp 100 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV32-100-E3/45 956
    • 1 $1.34
    • 10 $0.953
    • 100 $0.811
    • 1000 $0.71
    • 10000 $0.71
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    BYV 45 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYV45-600 USHA Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 45A, Vrrm = 600V. Original PDF

    BYV 45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode BYV 95

    Abstract: byv 16 BYV 08
    Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in


    Original     		PDF BYV12, 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV12 BYV13 BYV14 BYV15 BYV16 Diode BYV 95 byv 16 BYV 08

    BYV 200

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV 200

    BYV32

    Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-100 JESD22-B102D J-STD-002B

    BYV32

    Abstract: BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C O-263AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 O-263AB 08-Apr-05 JESD22-B102D J-STD-002B

    BYVB32-200-E3

    Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYVB32-200-E3 JESD22-B102D J-STD-002B Diode BYV 95

    BYV32-200E

    Abstract: Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC BYV32-200E Diode BYV 95

    BYV32

    Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35

    Untitled

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC

    BYV32-150

    Abstract: byv 20 BYV32100
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020C, ITO-220AB 2002/95/EC BYV32-150 byv 20 BYV32100

    BYV32-200E

    Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-200E JESD22-B102 J-STD-002 byv325

    Untitled

    Abstract: No abstract text available
    Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage


    Original     		PDF BYV26A BYV26G DO-15

    Untitled

    Abstract: No abstract text available
    Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage


    Original     		PDF BYV26A BYV26G DO-15

    byv36c

    Abstract: BYV 36E
    Text: BYV36A-BYV36E Fast Recovery Rectifiers VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.5-1.6 A DO-15 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents


    Original     		PDF BYV36A-BYV36E DO-15 DO--15 BYV36D BYV36E BYV36A BYV36C BYV 36E

    SCHOTTKY bys 92-50

    Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
    Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6


    OCR Scan     		PDF

    BYW 200

    Abstract: BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45
    Text: Type Vrrm I favm tA = 25°C V A 34032T7 D0D135E Sbû b lE » eupec Epitaxial rectifier diodes Ifsm vF Ir 10 ms, tv j max ¡F = • f a v m = 25 °C VR = Vrrm tvj — tVj max A V mA BYR 29-800 800 8 60 BYT 79-500 500 14 BYV 29-400 400 trr tvj max ns °c IUPEC


    OCR Scan     		PDF 34032t7 d0d135e 57/58-E BYW 200 BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45

    TMM BAT 48

    Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
    Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)


    OCR Scan     		PDF ps/20 0-20A TMM BAT 48 melf Schottky Byv 10-40 tm BYV 30 45 BAT 49

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    SCHOTTKY DIODES CROSS REFERENCE

    Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
    Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C


    OCR Scan     		PDF BAR11 LL101 BAT47/48 BAT19 BAT29 10/BAT19 10/BAT SCHOTTKY DIODES CROSS REFERENCE SD 102 M BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent bat 301 l BAR10

    Untitled

    Abstract: No abstract text available
    Text: IBSAGrlBB ULTR'A-FAST-RECOVERY-RECTIFIER DIODES V RRM Typé ,V > I I FAV FSM (A (A) V at I F F (V) (A) t rr (ns) T jmax <C >. 200 300 400 500 600 800 900 1000 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 170 170 170 170 170 100 100 100 <1.5 <1.5 <1.7 <1.7 <1.7


    OCR Scan     		PDF

    SOD106A

    Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A


    OCR Scan     		PDF 1N5817 BYV10-20 1N5818 1N5819 PRLL5817 PRLL5818 PRLL5819 OD106A OT223 BYG90-20 SOD106A 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81

    BYV 35 C

    Abstract: BYV 200 BYW 200 BYW 56 V diodes byw 86 bvy 121 byv 65 BYY 56 diodes byw 29150
    Text: 'T - 0 3 - O I . Epitaxial rectifier diodes Type :‘»IE d eupec Vrrm V • 34D32ci7 0DDD15T 4?b ■ Ifavm Ifsm VF tA= 25°C 10 ms, tv, max tv| = 25 °C VR = Vrrm tvj = tVjmax A V < 1 ,7 5 A ¡f = I f a v m Ir upec trr Wj max mA ns °c < 0 ,2


    OCR Scan     		PDF

    BY407A

    Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
    Text: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C


    OCR Scan     		PDF CB-210) CB-26) BYV88- BY407A BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210

    BYY 56

    Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
    Text: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75


    OCR Scan     		PDF 34032T7 DDD1355 57/58-E BYY 56 BYV 200 BYV 30 45 BYW 200 BYV 100 5BFL

    diodes byw

    Abstract: 29150 BYV 35 C
    Text: Epitaxial rectifier diodes Type V rrm = 2 5 “C t* V VF Ifs m Ifa v m A 10 m s, •f W max t v| A V Ir = Ifavm = 2 5 °C VR tuj tv j max trr Outline = V rrm = t vj max mA ns °C BYR 29-800 800 8 60 < 1 ,7 5 < 0 ,2 <75 150 132 BYT 79-500 500 14 150 < 1 ,4


    OCR Scan     		PDF 57/58-E 57/58-E diodes byw 29150 BYV 35 C