Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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BYV 200
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV 200
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TR-R25
Abstract: BYV32 BYV 35 C
Text: BYV32 Series Dual Ultra Fast Rectifiers TO-220AB PRV : 50 - 200 Volts Io : 18 Ampere 0.154 3.91 DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * * 0.415(10.54)MAX. Glass passivated chip junction High current capability
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BYV32
O-220AB
O-220AB
TR-R25
BYV 35 C
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BYV32-150
Abstract: byv 20 BYV32100
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020C,
ITO-220AB
2002/95/EC
BYV32-150
byv 20
BYV32100
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BYV32-200E
Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-200E
JESD22-B102
J-STD-002
byv325
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Untitled
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
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BYV32
Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-100
JESD22-B102D
J-STD-002B
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BYV32
Abstract: BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C
O-263AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
O-263AB
08-Apr-05
JESD22-B102D
J-STD-002B
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BYVB32-200-E3
Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYVB32-200-E3
JESD22-B102D
J-STD-002B
Diode BYV 95
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BYV32
Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
JESD22-B102
J-STD-002
BYV 35 C
BYV 35
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BYV32-200E
Abstract: Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
BYV32-200E
Diode BYV 95
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esja
Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35
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ESJA82-12
esja
ESJC
ESJA82-12
BYV 35
esjc 0309
ESJA 52-12
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ESJA
Abstract: ESJC
Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C
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DD21liD
ESJA
ESJC
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BYV 200
Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-1508-100,
BYV 200
diodes byw 92
FZJ 101
99P-200
byw 150
BYW 200
diodes byw 08 200
BYV 35
diodes byw 51 200
BYV 35 C
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BYW 200
Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Text: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)
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28UNF*
CB-34)
BYW 200
diodes byw 92
byw 150
diodes byw 08 200
Thomson-CSF diodes de redressement
Diodes de redressement
diodes byw
CB-34
1250A2s
92200
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BYV 35 C
Abstract: BYV 200 BYW 200 BYW 56 V diodes byw 86 bvy 121 byv 65 BYY 56 diodes byw 29150
Text: 'T - 0 3 - O I . Epitaxial rectifier diodes Type :‘»IE d eupec Vrrm V • 34D32ci7 0DDD15T 4?b ■ Ifavm Ifsm VF tA= 25°C 10 ms, tv, max tv| = 25 °C VR = Vrrm tvj = tVjmax A V < 1 ,7 5 A ¡f = I f a v m Ir upec trr Wj max mA ns °c < 0 ,2
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BYY 56
Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
Text: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75
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34032T7
DDD1355
57/58-E
BYY 56
BYV 200
BYV 30 45
BYW 200
BYV 100
5BFL
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diodes byw
Abstract: 29150 BYV 35 C
Text: Epitaxial rectifier diodes Type V rrm = 2 5 “C t* V VF Ifs m Ifa v m A 10 m s, •f W max t v| A V Ir = Ifavm = 2 5 °C VR tuj tv j max trr Outline = V rrm = t vj max mA ns °C BYR 29-800 800 8 60 < 1 ,7 5 < 0 ,2 <75 150 132 BYT 79-500 500 14 150 < 1 ,4
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57/58-E
57/58-E
diodes byw
29150
BYV 35 C
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BYW 200
Abstract: BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45
Text: Type Vrrm I favm tA = 25°C V A 34032T7 D0D135E Sbû b lE » eupec Epitaxial rectifier diodes Ifsm vF Ir 10 ms, tv j max ¡F = • f a v m = 25 °C VR = Vrrm tvj — tVj max A V mA BYR 29-800 800 8 60 BYT 79-500 500 14 BYV 29-400 400 trr tvj max ns °c IUPEC
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34032t7
d0d135e
57/58-E
BYW 200
BYY 56
BYV 200
byw 150
MQ-5
byv 25-1
BYV 30 45
0 280 142 300
BYV 35
BYV 43 45
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BYY 56
Abstract: BYV 35 byv 65 BYV 200
Text: ~V-03-0\ Epitaxial rectifier diodes Type V rrm Ifavm V 10 A 800 • 3M03217 DPDD151 i s t VF I fs m = 2 5 °C tA BYR 29-800 11E D eupec ms, ¡f Ir = I favm = 25 °C Outline = V rrm = t Vj max VR t v, A V mA ns < 1 ,7 5 < 0 ,2 < 60 UPEC Ivj max trr tv| max
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03-Oj
BYY 56
BYV 35
byv 65
BYV 200
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BAS18
Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Text: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)
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0-20A
BAS18
BAT 43 Schottky Diodes
BYV 200
BYV 35 C
BAT45
BAR29
BYV 43 45
BAT 49
melf Schottky glass
BAT29
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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