Untitled
Abstract: No abstract text available
Text: BYW 08-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT
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diodes byw
Abstract: No abstract text available
Text: BYW 100-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C
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BYW 200
Abstract: BYW 90
Text: BYW 100-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C
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Untitled
Abstract: No abstract text available
Text: BYW 100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS
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Untitled
Abstract: No abstract text available
Text: BYW 78-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C
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BYW29
Abstract: bvw29 BYW29-150M T0220SM 150V-200V
Text: 613 3107 bOE D SENELAB DQGQSSM 2TB « S I I L B - PLC T 3 - 1 7 SEMELAB BYW29 - 50M B Y W 29- 100M BYW 29-150M BYW 29-200M MECHANICAL DATA HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS Dimensions in mm FEATURES • HERMETIC TO 220 M ETAL OR
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BYW29
BYW29-
BYW29-150M
BYW29
T0220M
T0220
T0220SM
bvw29
150V-200V
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ic 7850
Abstract: No abstract text available
Text: £ = T SCS-THOMSON eœaiioîffscgffloes BYW 78-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN
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M1CHOEL11CTIS0IMO*
ic 7850
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Untitled
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON ^ 7 # HmemBiHCTBIBBOOIBi BYW 100-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES EN
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BYW 70
Abstract: No abstract text available
Text: SGS-THOMSON M e œ iL ie ïG M e s BYW 08-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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transistor N100
Abstract: No abstract text available
Text: C T S G S - T H O M S O N ^ 7 # . HD»HLI TO s lfSlD(gi BYW 100-50 ->200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES ENABLE
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AT100
transistor N100
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esja
Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35
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ESJA82-12
esja
ESJC
ESJA82-12
BYV 35
esjc 0309
ESJA 52-12
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Untitled
Abstract: No abstract text available
Text: £ Z 7 S C S - T H O M S O N ^ 7# . [10MËILI §ra(B i0(SI BYW 08-50 -» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE
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7T2T237
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fast diode byw 98 200
Abstract: 00SW1
Text: r z 7 ^ 7# S C S - T H O M S O N B H B m E a .ie 7 ^@M 0e i BYW 98-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT
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ESJA
Abstract: ESJC
Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C
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DD21liD
ESJA
ESJC
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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diodes byw
Abstract: byw 15200 BYW 90 byw 15400 byv 71-100 BYW 200 diodes byw 16400 byw 150 byw 15600 pfr 852
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Type» •o Vrr m ■f s m 10 ms A (V) (A) vF / if |r / v r r m tirr (A) max (mA) max (nis) max 3 A / Ta n ib = 9 0 ° C PFR 850 PFR 851 PFR 852 PFR 854 PFR 856 3 3 A / Tam b = 5 0 ° C
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CB-197)
CB-227)
1000VIBY339
diodes byw
byw 15200
BYW 90
byw 15400
byv 71-100
BYW 200
diodes byw 16400
byw 150
byw 15600
pfr 852
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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66R2S
Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Text: DO 4 C B 33 C ontrolled avalanche silicon rectifier diodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC
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6tcase12s
12tcase125
12tcase
66R2S
30R2S
Diodes de redressement
byw 68
26R2S
BYW 200
r2 137
C2501
C5001
REDRESSEMENT
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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CB-257
Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100
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200A2
CB-197)
80A2s
CB-3171
BYW17-
CB-257)
1N1341B,
CB-33)
CB-257
BYW 90
1N1581
diodes byw
214200
byw 150
D027A
1N1341B
1n1342
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LT 7750
Abstract: BYW 90 77100 BYW31-150BYW77-5G
Text: RECTIFIERS UES701 BYW3I-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 High Efficiency, 25 A FEATURES • Low Forward Voltage • Very Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DESCRIPTION
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UES701
BYW3I-50
BYW77-50
UES702
BYW31-100
BYW77-100
UES703
BYW31-150
BYW77-150
UES70I
LT 7750
BYW 90
77100
BYW31-150BYW77-5G
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