MX10E8050IQC
Abstract: MX10E8050IUC dsca 125 MX10E8050IPC byx 21
Text: PRELIMINARY MX10E8050I FEATURES - 80C51 CPU core - 3.0 ~ 3.6V voltage range - On-chip Flash program memory with in-system programming ISP - Operating frequency up to 40MHz - 64K bytes Flash memory for code memory - 1280 bytes internal data RAM - Low power consumption
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MX10E8050I
80C51
40MHz
16-bit
400kb/s
MX10E8050IPC
40pin
MX10E8050IQC
44pin
MX10E8050IUC
MX10E8050IQC
MX10E8050IUC
dsca 125
MX10E8050IPC
byx 21
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DSCA 114 communication board
Abstract: MX10E8050IQC BYX 13 400 R
Text: PRELIMINARY MX10E8050I MX10E8050X Major Difference Product Feature Default ISP IAP Package Clock mode MX10E8050IPC MX10E8050IQC 40Pin PDIP x 12 YES YES 44Pin PLCC MX10E8050IUC 44Pin LQFP MX10E8050XPC 40Pin PDIP MX10E8050XQC x6 NO NO MX10E8050XUC P/N:PM0887
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MX10E8050I
MX10E8050X
MX10E8050IPC
MX10E8050IQC
MX10E8050IUC
MX10E8050XPC
MX10E8050XQC
MX10E8050XUC
40Pin
44Pin
DSCA 114 communication board
BYX 13 400 R
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DDB6U25N16VR
Abstract: 76w9
Text: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2
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DDB6U25N16VR
DDB6U25N16VR
76w9
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
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DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
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500 watt inverter 12v dc to 220 ac
Abstract: main inverter transformer 1000W CXA-0214 inverter 24 vdc to 220 vac 1300 watt JST Manufacturing CXA-0349 power supply fps 1000-24 CXA-0319 CXA-0217 CXA-L0605-VJL
Text: Power Supplies, DC/DC Converters and CCFL Inverters AC/DC Power Supplies 1 DC/DC Converter 8 Value Added AC/DC & DC/DC 18 Inverter for LCD Backlight Applications 20 Front-End Power Supplies No.1 in the world in power density. AC/DC front-end power supply packaged in 1U rack
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1U/19"
FPS-1000-48
FPS-1000-32
FPS-1000-24
10M-L
55x28x16
CXA-M14L-P
55x28x17
CXA-P10A-P
500 watt inverter 12v dc to 220 ac
main inverter transformer 1000W
CXA-0214
inverter 24 vdc to 220 vac 1300 watt
JST Manufacturing
CXA-0349
power supply fps 1000-24
CXA-0319
CXA-0217
CXA-L0605-VJL
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CXA-0442
Abstract: tdk lambda alpha 400w inverter tdk lambda cxa-l0605-vjl 500 watt inverter 12v dc to 220 ac Lambda VEGA 900 CXA-0227 BHR-03VS-1 53261-0871 cxa 0307 inverter tdk CXA-0214
Text: Power Supplies, DC/DC Converters and CCFL Inverters This short form catalogue is a summary of the CCFL DC/AC inverters, AC/DC and DC/DC telecom oriented products from the much broader range of TDK power conversion products. AC/DC Power Supplies 1 DC/DC Converter
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BHR-03VS-1
D-40472
CXA-0442
tdk lambda alpha 400w
inverter tdk lambda cxa-l0605-vjl
500 watt inverter 12v dc to 220 ac
Lambda VEGA 900
CXA-0227
BHR-03VS-1
53261-0871
cxa 0307 inverter tdk
CXA-0214
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mc 51002
Abstract: 61400 DIODE REDRESSEMENT diode byx diode byx 65 400 byx 35 150 diode LF 306-S MU Thomson-CSF diode BYX 13 400 R Thomson-CSF diodes de redressement
Text: G SÌC D 1• 7=1^23? 00G2271 4 S-THOMSON Q T H O M BYX 61-50, R BYX 61-400, (R) S O N - C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R E C O V E R Y R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '
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00G2271
B10la
220cm
CB-33)
mc 51002
61400
DIODE REDRESSEMENT
diode byx
diode byx 65 400
byx 35 150 diode
LF 306-S
MU Thomson-CSF diode
BYX 13 400 R
Thomson-CSF diodes de redressement
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Untitled
Abstract: No abstract text available
Text: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '
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00G2271
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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BYX 13 400 R
Abstract: DIODE REDRESSEMENT 100-10L WD BYX62-600 1N3889 1N3893 IN3893 HT-77 vJ26 byx62
Text: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY
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3889-1N
BYX62
CB-33)
BYX 13 400 R
DIODE REDRESSEMENT
100-10L WD
BYX62-600
1N3889
1N3893
IN3893
HT-77
vJ26
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Untitled
Abstract: No abstract text available
Text: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY
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100OC)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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ac05d
Abstract: LDR 24v AC05DSM AC05ESM AC05FSM AC08DGM AC08EGM AC08FGM H-17 39max
Text: - 164 a AC05r jS M « N T -5 o m sM M o m m AC 1500V i o S S ^ 'líi^ Jr x f líS If íW m s iw iit t (U LÖ 4 V -0 «ili. • f iA Æ t â A C 0 5 D SM A C05ESM AC05FSM Vdsm 500 600 700 Vdrm 400 500 600 SÉ I n RMS) £ £ V tm Tj — 25’C , I tm — 5 A
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AC05r
AC05DSM
AC05ESM
AC05FSM
50Hz/60Hz,
/250Hz,
H-101
ac05d
LDR 24v
AC05FSM
AC08DGM
AC08EGM
AC08FGM
H-17
39max
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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Untitled
Abstract: No abstract text available
Text: JJV. * ’ï 1999 ADVANCE M T 2 6 C 1600 KHICCMXJCTQR me OTPROM 2 Meg x 8,1 Meg x 16 OTPROM FEATURES • Fast access tim es: 80ns, 100ns, 120ns • Selectable organizations: 2,097,152 x 8 or 1,0 4 8 ,5 7 6 x 1 6 • Industry-standard pinouts • Single pow er supply: 5V±10%
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100ns,
120ns
42-Pin
44-Pin
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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Untitled
Abstract: No abstract text available
Text: 008SCHSD- ZL 7 / 1 5 / 9 8 8 : 0 3 PM Page 1 SHARP LH28F008SCHSD-ZL LH28F008SCHSD-ZL 8 M-bit 512 kB x 8 x 2-Bank Dual Work Flash Memory DESCRIPTION The LH 28F 008S C H S D -Z L Dual W ork flash m em ory SR A M -com patible w rite interface is a h ig h -d e n sity, lo w -cost, n o n vo la tile , re a d /w rite
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008SCHSD-
LH28F008SCHSD-ZL
48-pin
LH28F008SCHSD-ZL
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