Contextual Info: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway • Typical IR less than 0.1 A

BYX10GP-E3/4

Contextual Info: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway • Typical IR less than 0.1 A

Contextual Info: BYX10G J V RECTIFIER DIODE Double-diffused glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope, intended for use in general industrial applications where a high repetitive peak reverse voltage is required. QUICK REFERENCE DATA

BYX101G

Abstract: BYX102G BYX103G BYX104G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D183 BYX101G to BYX104G High-voltage soft-recovery controlled avalanche rectifiers Preliminary specification Supersedes data of 1996 May 24 File under Discrete Semiconductors, SC01 1996 Oct 03 Philips Semiconductors

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D183 BYX101G to BYX104G High-voltage soft-recovery controlled avalanche rectifiers Preliminary specification Supersedes data of 1996 May 24 1996 Oct 03 Philips Semiconductors Preliminary specification High-voltage soft-recovery

BYX105G

Abstract: BYX106G BYX107G BYX108G PHILIPS BYX105G
Contextual Info: DISCRETE SEMICONDUCTORS BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 Philips Semiconductors 2000 Jan 13 PHILIPS PHILIPS Philips Semiconductors Product specification

SOD88A

Abstract: BYX101G BYX102G BYX103G BYX104G PHILIPS BYX101G
Contextual Info: DISCRETE SEMICONDUCTORS BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 Philips Semiconductors 2000 Jan 13 PHILIPS PHILIPS Philips Semiconductors Product specification

BYX10G

Abstract: 0032T
Contextual Info: BYX10G _ RECTIFIER DIODE D ouble-diffused glass-passivated rec tifie r diode in h e rm etically sealed axial-leaded glass envelope, intended fo r use in general industrial applications w here a high repetitive peak reverse voltage is required.

BYX101G "cross reference"

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery

BYX101G

Abstract: BYX102G BYX103G BYX104G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D183 BYX101G to BYX104G High-voltage soft-recovery controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Preliminary specification

BYX105G

Abstract: BYX106G BYX107G BYX108G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D183 BYX105G to BYX108G High-voltage soft-recovery controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Preliminary specification

TRA1110

Abstract: mr2001s MR331 1N3493 MR2006S BY126 MR328 1N1191 TRA1120 TRA1140
Contextual Info: Pro-Electron I q Average rectified forw ard Current Amps 1.0 0.36 ^Case V R R M (Volts) > 59.04 BY135 B Y 126/134 BY127 BY133 150 600 1250 1300 1600 BYX10 30 75 150 •f s m <am P> T /\ at rated Iq (°C) t J R R M 1 <°c > -< 40 75 150 •\ 20 20 25 25 25

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery

BYX10GP

Contextual Info: BYX10GP SERIES 36 A M P E R E M IN IATU RE G L A S S PASSIVA TED J U N C T IO N P L A S T IC R E C T IF IE R GENERAL INSTRUMENT VOLTAGE RANGE 16 0 0 Volts CURRENT .36 A moere FEATURES • High temperature metallurgically bonded constructed rectifiers • Plastic package has Underwriters Laboratory

BYX10

Abstract: CR2-160 BYX10/01
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR 92D 00323 T - / DESCRIPTION The CENTRAL SEMICONDUCTOR BYX10 type is an axial lead epoxy molded silicon rectifier designed for general purpose, very high voltage applications. For higher current applications, (up to 2.0 Amps) contact the factory for information on CR2-160 rectifier (2.0 Amps, 1600 Volts).

214A68

Abstract: ig137 efr135 IN5802 panasert RGP10E 3L41 BYX10GP PKQ14 k 524 ir
Contextual Info: 2SE D GENL I N S T R / PO W E R • - 3 6 1 0 1 3 7 GGG3b74 7 ■ T - O h 0 ? BYX10GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage 1600 Volts - Current - .36 Amperes FEA T U RES ♦ High temperature metallurglcally bonded con­ structed rectifier

BYX10GP

Abstract: JESD 201 class 1A JESD 201 byx10 DO-204AL JESD22-B102 J-STD-002 89112
Contextual Info: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway

byx10

Abstract: MBG030 BYX10G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYX10G Rectifier Product specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification Rectifier BYX10G FEATURES DESCRIPTION • Glass passivated

BYX108

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D183 BYX105G to BYX108G High-voltage soft-recovery controlled avalanche rectifiers Preliminary specification Supersedes data of 1996 May 24 1996 Oct 03 Philips Semiconductors Preliminary specification High-voltage soft-recovery

BYX10G

Abstract: MBG030
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYX10G Rectifier Product specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification Rectifier BYX10G FEATURES DESCRIPTION • Glass passivated

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery

BYX10GP

Contextual Info: BYX10GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 1600 Volts Current - .36 Amperes FEATURES DO-41 t 1.0 25.4 MIN .107(2.7) .080(2.0) ♦ ♦ 1 ♦ .205(5.2) .160(4.1) ♦ ♦ ♦ t 1.0(25.4) MIN ♦ .0341.86) .028 (.71) High temperature metallurgical^ bonded con­

Contextual Info: BYX10GP www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery