BYX38-300
Abstract: BYX38 IR 5331 BYX38-300R XFRM
Text: IT N AMER PHILIPS/DISCRETE ESE D H ^53131 QOSSfiO^ b • BYX38 SERIES T-0\-i7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal polarity cathode to stud : BYX38-300 to 1200.
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BYX38
BYX38-300
BYX38-300R
1200R.
10-32UNF
IR 5331
XFRM
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Untitled
Abstract: No abstract text available
Text: BYX38 SERIES J V_ SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : B Y X 3 8 -3 0 0 t o 1200.
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BYX38
1200R.
BYX38
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BYX38-300
Abstract: BYX38 BYX38-300R iC-NC BYX38/300 T0117
Text: BYX38 SERIES SbE D PHILIPS INTERNATIONAL • 711QÛ2b D D M l b m 3TT ■ P H I N T - 0 M 7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:
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BYX38
711QflSb
BYX38-300
BYX38-300R
1200R.
10-32UNF
iC-NC
BYX38/300
T0117
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BYX38-300
Abstract: BYX38 BYX38-300R
Text: IT N AMER PHILIPS/DISCRETE 2SE D H hhS3T31 □D22fiOcl b • BYX38 SERIES ' 7= 01-/7 SILICON RECTIFIER DIODES Silicon rec tifie r diodes in D O -4 m etal envelopes, intended fo r use in po w er re c tifie r ap plicatio ns. Th e series consists o f the fo llo w in g types:
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BYX38
BYX38-300
BYX38-300R
1200R.
10-32UNF
BYX38
bbS3T31
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Untitled
Abstract: No abstract text available
Text: IT N AM E R PHILIPS/DISCRETE 2SE ^53=131 D QDEEflQ^ b • BYX38 SERIES 7^01-17 SILICON RECTIFIER DIODES S ilic o n re c tifie r diodes in D O -4 m etal envelopes, intended fo r use in pow er re c tifie r a p p lica tio n s. T he series consists o f the fo llo w in g types:
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BYX38
BYX38
bb53131
0DSBS15
7Z72547
bbS3T31
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BYX38-300
Abstract: BYX38 BYX38/300 BYX38-300R
Text: BYX38 SERIES SbE D PHILIPS INTERNATIONAL m 711DÛSb D D M l b m 3TT • PHIN T -0 M SILICON RECTIFIER DIODES S ilic o n re c tifie r diodes in D O -4 m etal envelopes, intended fo r use in p o w e r re c tifie r a p p licatio n s. T he series consists o f the fo llo w in g types:
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BYX38
711DflSb
OD41L14
BYX38-300
BYX38-300R
1200R.
10-32unf
BYX38/300
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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Yx46
Abstract: No abstract text available
Text: SELECTION GUIDE y V. 500 600 FAST RECTIFIER DIODES Ultra fast epitaxial types (25 to 100 ns) 'F(A V )m ax (A) Outline Page v RRMmax <v > 50 100 150 200 300 400 700 800 1000 vW vl ww 100 D T 1ZOU r IV O U r ^ / b BYV54V* SOT-227B - - 403 ’ Dual rectifier diodes.
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BYV54V*
OT-227B
OSS9215--
OSB9115--
OSB9215--
OSM9115--
OSM9215-4A
OSS9115--
Yx46
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BYX38-600
Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given
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BYX38-600
BZY93-C7V5
BYX38
BZY93
germanium rectifier diode
byx38 diode
germanium varactor diode
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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