IR2156 application
Abstract: C 13 PH Zener diode zener diode ph 48 C 12 PH Zener diode cfl circuit diagram of 12 volts IR2156 ZENER DIODE PH 5.1V IR2156S 12v ballast ic 1N4007
Text: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA) • Latch immunity and ESD protection
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PD60182-I
IR2156
14-Lead
IR2156
IR2156S
IR2156S
IR2156 application
C 13 PH Zener diode
zener diode ph 48
C 12 PH Zener diode
cfl circuit diagram of 12 volts
ZENER DIODE PH 5.1V
12v ballast ic
1N4007
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C 11 PH Zener diode
Abstract: No abstract text available
Text: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC Features • • • • • • • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA)
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PD60182-I
IR2156
14-Lead
IR2156
IR2156S
IR2156S
C 11 PH Zener diode
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C 12 PH Zener diode
Abstract: PH 21 DIODE do214ac zener po111 VESDxx-02V GCDA05 GCDA15C-1 GL05-HT3 GL05T GL24T
Text: w w w. v i s h a y. c o m PRODUCT OVERVIEW ESD PROTECTION DIODES ESD Protection Diodes Introduction Typical Current-Voltage-Diagram of an ESD Protection Diode With the increasing use of Integrated Circuits in mobile and wired communication devices and consumer products, it is more important than ever to protect sensitive
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VHN-PO1113-0410
C 12 PH Zener diode
PH 21 DIODE
do214ac zener
po111
VESDxx-02V
GCDA05
GCDA15C-1
GL05-HT3
GL05T
GL24T
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PH 21 DIODE
Abstract: smd diode bat15 DIODE schottky 0.2v BAR64-02V rf 12 pin marking BA892-02V rf detector diodes BAR63-02V BAR63V-02V BAR65-02V
Text: RF PIN and Schottky Diodes in SOD523 SC79 Package w w w. v i s h a y. c o m PRODUCT OVERVIEW SWITCH - CONTROL - DETECT SWITCH-CONTROL-DETECT RF Diodes in SOD523 (SC79) Package With the SOD523 (SC-79) package, Vishay offers a small, space saving 2-pin SMT package with low inductance and
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OD523
SC-79)
OD323
OD523
BAR63-02V,
BAR64-02V,
BAR65-02V
PH 21 DIODE
smd diode bat15
DIODE schottky 0.2v
BAR64-02V
rf 12 pin marking
BA892-02V
rf detector diodes
BAR63-02V
BAR63V-02V
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po111
Abstract: BAS70-05-HT3 GMF05C-HS3 GMF05LC-HS3 GMF05MC-HS3 LLP75-6A SC75
Text: w w w. v i s h a y. c o m PRODUCT OVERVIEW ESD PROTECTION ARRAYS AND SCHOTTKY DIODES IN LLP75 PACKAGE THE LEADLESS LEADFRAME PACKAGE PLATFORM ESD Protection Arrays and Schottky Diodes in LLP75 Package DESCRIPTION ESD Protection Arrays With the introduction of it's new LLP package platform, VISHAY SEMICONDUCTORS presents an ultra-compact leadless leadframe package
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LLP75
OT363
OT23-6L.
VHN-PO1112-0407
po111
BAS70-05-HT3
GMF05C-HS3
GMF05LC-HS3
GMF05MC-HS3
LLP75-6A
SC75
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C 12 PH Zener diode
Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Text: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S
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OD523
OD323
DO219AB
OD123
BZX584C-series
AZ23-V-series
BZX84-V-series
VMN-SG2115-0704
C 12 PH Zener diode
C 15 PH Zener diode
C 13 PH Zener diode
ph 41 zener diode
C 12 PH zener
Zener PH 200
ph 18 c zener diode
ph Series Zener
PH 36 Zener
ph 12 c zener diode
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
smd diode code SL
smd diode g6 DIODE S4 39 smd diode
smd diode code g3
SMD mosfet MARKING code TC
S4 SMD Marking Code
SMD MARKING CODE s4
smd diode code g4
smd diode code s3
smd diode marking s4
smd diode S6
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
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bat41 BAT46
Abstract: C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V
Text: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 LL P 7 5 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal Schottky diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .
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OD523
OD323
OD123
SD103CWS-V
SD103CW-V
VMN-SG2109-0704
bat41 BAT46
C 12 PH Zener diode
bat41 bat43
VMN-SG21
BAT41 equivalent
Do219AB
BAS520-02V
BAS581-02V
BAT42W-V
BAT43W-V
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ph 1n4148
Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
Text: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .
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400ce
VMN-SG2114-0704
ph 1n4148
DO219AB
Syd17m
1n914 SOD123
s07j Do219AB
C 13 PH Zener diode
1N4148 sod123
ll4148 sod123
1n4148 ph
1N4148W SOD123
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VM716N8
Abstract: No abstract text available
Text: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical
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VM7160
65nV/VHz
VM7162
VM7164
VM7168
100mV,
10MHz
VM716N8
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ST-M40
Abstract: No abstract text available
Text: PH AST-12 Device Programmable, High-Performance ATM/Packet/Transmission SONET/SDH Terminator for Level 12 TXC-06112 DATA SHEET PRELIMINARY DESCRIPTION Integrated clock recovery and synthesis fo r four O C -3c/STM -1 sig n a ls or one O C -1 2 /O C -1 2 c/
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AST-12
TXC-06112
-12/S
800-521-CORE
TXC-06112-MB
ST-M40
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IRFY340
Abstract: irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120
Text: IOR I RFY Series Devices IRFY Series Data Sheet The IRFY Data Sheet de scrib es 12 devices, 8 N -C hannel and 4 P -C hannel, all con tain ed in the T O -257A B package. T his data sheet is arra ng ed to show com m on ta b u la r and gra ph ical inform ation
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O-257AB
IRFY9140
IRFY9240
IRFY044
IRFY120
IRFY130
IRFY140
IRFY240
IRFY340
IRFY430
IRFY340
irfv120
IRFY044
IRFY120
IRFY130
IRFY140
IRFY240
IRFY430
IRFY440
IRFY9120
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lt 6246
Abstract: z18a ECG6013 ECG5802 ECG6158 ECG586 ECG5801 ECG5804 ECG5882 Diode Z20
Text: PH IL IP S E C G INC Industrial Rectifiers P eak Reverse Voltage P R V Volts 50 3A 50 100 ECG5801 200 ECG5802 400 ECG5804 ECG5806 600 800 ECG5808 800 1000 ECG5809 1000 IFM Surge Tc at Rated lo (DC) Max 6A 6 A /22 A 12 A 15 A 16 A 20 A ECG5830 ECG5850 ECG5870
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ECG5800
ECG5830
ECG5850
ECG5870
ECG5940
ECG5892
ECG5912
ECG5831*
ECG5851*
ECG5871"
lt 6246
z18a
ECG6013
ECG5802
ECG6158
ECG586
ECG5801
ECG5804
ECG5882
Diode Z20
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BF980
Abstract: BF980 Philips 31AR UHF Dual Gate
Text: N AMER PH IL I P S /D IS C R ET E DbE D • bbSBTBl OOlETflS 3 A BF980 T -31-2^ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended for u.h.f. applications, such as u.h.f. television tuners, w ith 12 V supply voltage.
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BF980
BF980
BF980 Philips
31AR
UHF Dual Gate
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RS 329g
Abstract: LN26RP LN38GPPN LN303240UN 265r 430Y
Text: Visible Light Emitting Diodes • Point LEDs Round Type S hape Package No. Red T ype No. LN 21R P H L 05.0mm 01 LN 21R C PH L Red clear W h ite diffusion LN 31G PH L LN 31G C PH L LN 31G PH L(G ) Transparent LN 31G C PH L(G ) LN 21R P S L Red diffusion LN 31G PSL
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ALN240RCP
ALN221RPX
2050m
0151223U
0501199U
0501202U
0501229U
0801278U
5121149U
2561245U
RS 329g
LN26RP
LN38GPPN
LN303240UN
265r
430Y
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C 12 PH Zener diode
Abstract: C 15 PH Zener diode ph 18 c zener diode zener diode 9,1v 0.5 w Zener PH 200 C 12 PH zener Zener PH ph 12 c zener diode ph 17 G zener diode zener diode si 18
Text: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV ~ 24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : ESC • Nominal Voltage Tolerance About ±6%. MAXIMUM RATINGS Ta=25°C
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KDZ20EV
KDZ22EV
KDZ24EV
20x20mm
C 12 PH Zener diode
C 15 PH Zener diode
ph 18 c zener diode
zener diode 9,1v 0.5 w
Zener PH 200
C 12 PH zener
Zener PH
ph 12 c zener diode
ph 17 G zener diode
zener diode si 18
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H-516
Abstract: B10A90VIC
Text: SEMICONDUCTOR TECHNICAL DATA B10A90VIC SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : Io=10A Tc=110°C . • Repetitive Peak Reverse Voltage : V r rm = 9 0 V .
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B10A90VIC
H-516
B10A90VIC
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ph-15 diode
Abstract: B5A90VI wavin C 12 PH diode
Text: SEMICONDUCTOR TECHNICAL DATA B5A90VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=115°C . • Repetitive Peak Reverse Voltage : V rrm = 9 0 V .
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B5A90VI
ph-15 diode
B5A90VI
wavin
C 12 PH diode
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B15A45V
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. B15A45V SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. 1 J R FEATURES t • Average Output Rectified Current : Io=15A Tc=117°C . • Repetitive Peak Reverse Voltage
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B15A45V
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KDR731S
Abstract: marking ZS SOT-23 kec marking SOT sot-23 zs
Text: SEMICONDUCTOR TECHNICAL DATA KDR731S SCHOTTKY BARRIER TYPE DIODE SERIES CONNECTION HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. DIM FEATURES • • • • Low Forward Voltage : Vf max=0.55V Fast reverse recovery time (trr max=10nS)
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KDR731S
OT-23
KDR731S
OT-23
20//A
10/zs
marking ZS SOT-23
kec marking SOT
sot-23 zs
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byv26c ph
Abstract: philips diode PH 15
Text: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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BYV26
BYV26A
BYV26C
BYV26D
BYV26B
BYV26E
byv26c ph
philips diode PH 15
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE vco. FEATURES • Low Series Resistance : rs=0.50£2 Max. • Small Package (ESC Package). MILLIMETERS MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC
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KDV350E
50ffl
470MHz
KDV350E
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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