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    C 2570 TRANSISTOR Search Results

    C 2570 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 2570 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 2D

    Abstract: AN18 LX1671 Si4842DY
    Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1671 LX1671 capacitor 2D AN18 Si4842DY

    12 volt 200 Amp PWM

    Abstract: AN18 LX1671 Si4842DY three phase rectifier pwm
    Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2c, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1671


    Original     		PDF LX1671 LX1671 12 volt 200 Amp PWM AN18 Si4842DY three phase rectifier pwm

    AN19

    Abstract: LX1671 LX1672 Si4842DY
    Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1672


    Original     		PDF LX1672 LX1672 AN19 LX1671 Si4842DY

    LX1671

    Abstract: LX1673 Si4842DY fet cross reference 5a2 zener diode
    Text: LX1673 PRODUCT DESIGN GUIDE AN20 LX1673 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1673


    Original     		PDF LX1673 LX1673 LX1671 Si4842DY fet cross reference 5a2 zener diode

    5a2 zener diode

    Abstract: AN19 LX1671 LX1672 Si4842DY
    Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1672 LX1672 5a2 zener diode AN19 LX1671 Si4842DY

    high power fet audio amplifier schematic

    Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd
    Text: LXE1711-100 EVALUATION BOARD USER GUIDE LXE1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.3, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LXE1711-100 high power fet audio amplifier schematic 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd

    Calculator Keypad and LCD

    Abstract: CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23
    Text: AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2000 Rev. 1.0, 2002-12-30 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX432 15KHz UPS5819 FDV303N Si2308) CMD333UW D333UW Calculator Keypad and LCD CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23

    boost converter application note

    Abstract: TDS3034B AN22 AN-22 LX1741 LX1742 TCP202 LX7142
    Text: LX1741/LX1742 BOOST CONVERTER APPLICATION NOTE LX1741 / LX1742 BOOST CONVERTER DESIGN HINT AN-22 Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2002 Rev. 1.0, 2002-12-03 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1741/LX1742 LX1741 LX1742 AN-22 LX741 boost converter application note TDS3034B AN22 AN-22 TCP202 LX7142

    12 volt audio amplifier class D schematic

    Abstract: high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin
    Text: LXE1711-100 EVALUATION BOARD USER GUIDE Not Recommended For New Design LX1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright 2000 Rev. 0.4, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LXE1711-100 LX1711-100 12 volt audio amplifier class D schematic high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin

    JESD79

    Abstract: AN-17 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY PC133-SDRAM MCR10F2003
    Text: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION I N T E G R A T E D Copyright 2002 Revision 1.2a, 7/17/2002 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF AN-17 LX1672 LX1673 ESRE181M04B ESRE271M02B MCH182CN104KK GMR219R60J475K MCR10F10R0 JESD79 AN-17 LX1671 LX1672-03CLQ LX1673 Si4842DY PC133-SDRAM MCR10F2003

    MOSFET J162

    Abstract: CW12010T0050G
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		PDF AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H160--4S4 AFT26H160-4S4R3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3

    GSC356-HYB2500

    Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 GSC356-HYB2500 MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625

    Untitled

    Abstract: No abstract text available
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B

    adl5324

    Abstract: 869MHz
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B 869MHz

    Untitled

    Abstract: No abstract text available
    Text: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620


    Original     		PDF PTFC261402FC PTFC261402FC 140-watt H-37248-4

    ADL5324

    Abstract: 128777 ADL5324ARKZ-R7 GRM155 capacitor 42EVALUATION GRM615COG
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 12-18-2008-B O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 128777 GRM155 capacitor 42EVALUATION GRM615COG

    2N3773

    Abstract: 2N3773 NPN Transistor 2N3773 transistor 2n3773h 150WATT
    Text: 2N3773 NPN Silicon Power Transistor. 16Amp - 140V - 150Watt. High. 1 of 1 Home Part Number: 2N3773 Online Store 2N3773 Diodes NPN Silic o n Po w er Trans is t o r. 1 6 Am p - 1 4 0 V - 1 5 0 Watt . High


    Original     		PDF 2N3773 16Amp 150Watt. com/2n3773 2N3773 2N3773 NPN Transistor 2N3773 transistor 2n3773h 150WATT

    j821

    Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3

    j377

    Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 j377 MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA j382 ATC800B HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR


    OCR Scan     		PDF MRF1031