C 2570 TRANSISTOR Search Results

C 2570 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C 2570 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
capacitor 2D Abstract: AN18 LX1671 Si4842DY Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LX1671 LX1671 capacitor 2D AN18 Si4842DY	PDF
12 volt 200 Amp PWM Abstract: AN18 LX1671 Si4842DY three phase rectifier pwm Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2c, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1671	Original	LX1671 LX1671 12 volt 200 Amp PWM AN18 Si4842DY three phase rectifier pwm	PDF
AN19 Abstract: LX1671 LX1672 Si4842DY Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1672	Original	LX1672 LX1672 AN19 LX1671 Si4842DY	PDF
LX1671 Abstract: LX1673 Si4842DY fet cross reference 5a2 zener diode Text: LX1673 PRODUCT DESIGN GUIDE AN20 LX1673 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1673	Original	LX1673 LX1673 LX1671 Si4842DY fet cross reference 5a2 zener diode	PDF
5a2 zener diode Abstract: AN19 LX1671 LX1672 Si4842DY Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LX1672 LX1672 5a2 zener diode AN19 LX1671 Si4842DY	PDF
high power fet audio amplifier schematic Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd Text: LXE1711-100 EVALUATION BOARD USER GUIDE LXE1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.3, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LXE1711-100 high power fet audio amplifier schematic 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd	PDF
Calculator Keypad and LCD Abstract: CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23 Text: AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2000 Rev. 1.0, 2002-12-30 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LX432 15KHz UPS5819 FDV303N Si2308) CMD333UW D333UW Calculator Keypad and LCD CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23	PDF
boost converter application note Abstract: TDS3034B AN22 AN-22 LX1741 LX1742 TCP202 LX7142 Text: LX1741/LX1742 BOOST CONVERTER APPLICATION NOTE LX1741 / LX1742 BOOST CONVERTER DESIGN HINT AN-22 Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2002 Rev. 1.0, 2002-12-03 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LX1741/LX1742 LX1741 LX1742 AN-22 LX741 boost converter application note TDS3034B AN22 AN-22 TCP202 LX7142	PDF
12 volt audio amplifier class D schematic Abstract: high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin Text: LXE1711-100 EVALUATION BOARD USER GUIDE Not Recommended For New Design LX1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright 2000 Rev. 0.4, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LXE1711-100 LX1711-100 12 volt audio amplifier class D schematic high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin	PDF
JESD79 Abstract: AN-17 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY PC133-SDRAM MCR10F2003 Text: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION I N T E G R A T E D Copyright 2002 Revision 1.2a, 7/17/2002 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	AN-17 LX1672 LX1673 ESRE181M04B ESRE271M02B MCH182CN104KK GMR219R60J475K MCR10F10R0 JESD79 AN-17 LX1671 LX1672-03CLQ LX1673 Si4842DY PC133-SDRAM MCR10F2003	PDF
MOSFET J162 Abstract: CW12010T0050G Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to	Original	AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H160--4S4 AFT26H160-4S4R3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3	PDF
GSC356-HYB2500 Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625 Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 GSC356-HYB2500 MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625	PDF

Untitled Abstract: No abstract text available Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias	Original	OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B	PDF
adl5324 Abstract: 869MHz Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias	Original	OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B 869MHz	PDF
Untitled Abstract: No abstract text available Text: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620	Original	PTFC261402FC PTFC261402FC 140-watt H-37248-4	PDF
ADL5324 Abstract: 128777 ADL5324ARKZ-R7 GRM155 capacitor 42EVALUATION GRM615COG Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias	Original	OT-89 ADL5324 ADL5324 12-18-2008-B O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 128777 GRM155 capacitor 42EVALUATION GRM615COG	PDF
2N3773 Abstract: 2N3773 NPN Transistor 2N3773 transistor 2n3773h 150WATT Text: 2N3773 NPN Silicon Power Transistor. 16Amp - 140V - 150Watt. High. 1 of 1 Home Part Number: 2N3773 Online Store 2N3773 Diodes NPN Silic o n Po w er Trans is t o r. 1 6 Am p - 1 4 0 V - 1 5 0 Watt . High	Original	2N3773 16Amp 150Watt. com/2n3773 2N3773 2N3773 NPN Transistor 2N3773 transistor 2n3773h 150WATT	PDF
j821 Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3	PDF
j377 Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 j377 MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA j382 ATC800B HSR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR	OCR Scan	MRF1031	PDF

C 2570 TRANSISTOR Search Results

C 2570 TRANSISTOR Result Highlights (5)

C 2570 TRANSISTOR Datasheets Context Search

capacitor 2D

12 volt 200 Amp PWM

AN19

LX1671

5a2 zener diode

high power fet audio amplifier schematic

Calculator Keypad and LCD

boost converter application note

12 volt audio amplifier class D schematic

JESD79

MOSFET J162

Untitled

Untitled

GSC356-HYB2500

Untitled

adl5324

Untitled

ADL5324

2N3773

j821

Untitled

Untitled

j377

Untitled