Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C 3197 NPN Search Results

    C 3197 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    C 3197 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hall sensor 3144

    Abstract: hall effect sensor 3144 3144 hall sensor hall effect sensor application note 3144 3059 npn transistor hall effect sensor 133 UGN3275K UGN5275K 3141 hall sensor 3503 allegro hall effect
    Text: 5275 COMPLEMENTARY OUTPUT POWER HALL LATCH X Type UGN5275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature open-collector complementary power outputs that are capable of sinking up to 300 mA continuously. Increased current


    Original
    UGN5275K PH-002 hall sensor 3144 hall effect sensor 3144 3144 hall sensor hall effect sensor application note 3144 3059 npn transistor hall effect sensor 133 UGN3275K 3141 hall sensor 3503 allegro hall effect PDF

    hall effect sensor 3144

    Abstract: hall effect sensor application note 3144 C 12 PH Zener diode hall current sensor 3A zener diode C 3197 hall effect sensor 4 pin "Brushless DC Motor" 3141 hall effect sensor Bipolar Junction Transistor
    Text: 5275 COMPLEMENTARY OUTPUT POWERHALL LATCH COMPLEMENTARY OUTPUT POWER HALL® LATCH X Type UGN5275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature open-collector complementary power outputs that are


    Original
    UGN5275K PH-002 hall effect sensor 3144 hall effect sensor application note 3144 C 12 PH Zener diode hall current sensor 3A zener diode C 3197 hall effect sensor 4 pin "Brushless DC Motor" 3141 hall effect sensor Bipolar Junction Transistor PDF

    AH 503 hall sensor

    Abstract: schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram
    Text: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of


    Original
    AMS-127B AH 503 hall sensor schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original
    MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703 PDF

    UC3825

    Abstract: UC3825 push pull dc to dc converter unitrode uc3825b u107 unitrode U-128 unitrode U-111 unitrode Applications Note U-107 U-128 unitrode UC3823 converter UC3825A
    Text: U-128 APPLICATION NOTE THE UC3823A,B AND UC3825A,B ENHANCED GENERATION OF PWM CONTROLLERS BILL ANDREYCAK ABSTRACT This application note will highlight the enhancements incorporated in four new PWM control ICs, the UC3823A, UC3823B, UC3825A and UC3825B devices. Based upon the industry standard UC3823 and UC3825 controllers, this advanced generation features several key improvements in protection and performance over their predecessors. Newly developed techniques such as leading edge blanking of the current sense input and full cycle soft start protection following a fault have


    Original
    U-128 UC3823A UC3825A UC3823A, UC3823B, UC3825B UC3823 UC3825 U-107 UC3825 push pull dc to dc converter unitrode uc3825b u107 unitrode U-128 unitrode U-111 unitrode Applications Note U-107 U-128 unitrode UC3823 converter PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original
    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original
    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    UC3825 push pull dc to dc converter

    Abstract: unitrode Applications Note U-107 UC3825 unitrode U-111 unitrode uc3825b UC3823 converter UC3825A "cross reference" unitrode U-128 UC3825A UC3825B
    Text: U-128 APPLICATION NOTE THE UC3823A,B AND UC3825A,B ENHANCED GENERATION OF PWM CONTROLLERS BILL ANDREYCAK ABSTRACT This application note will highlight the enhancements incorporated in four new PWM control ICs, the UC3823A, UC3823B, UC3825A and UC3825B devices. Based upon the industry standard UC3823 and UC3825 controllers, this advanced generation features several key improvements in protection and performance over their predecessors. Newly developed techniques such as leading edge blanking of the current sense input and full cycle soft start protection following a fault have


    Original
    U-128 UC3823A UC3825A UC3823A, UC3823B, UC3825B UC3823 UC3825 UC3825 push pull dc to dc converter unitrode Applications Note U-107 unitrode U-111 unitrode uc3825b UC3823 converter UC3825A "cross reference" unitrode U-128 PDF

    FZT600

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A


    OCR Scan
    OT223 FZT600 100mA 100oC 20MHz 300fis. FZT600 PDF

    2SA753

    Abstract: EN3197 2SA17 2SA1753 2SC45 2SC4577 transistors 2SA 2SA POWER TRANSISTORS
    Text: Ordering number: EN 3197 2SA1753/2SC4577 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications Features •Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.


    OCR Scan
    2SA1753/2SC4577 2SA1753/2SC4577-applied 2SA1753 2SA753 EN3197 2SA17 2SA1753 2SC45 2SC4577 transistors 2SA 2SA POWER TRANSISTORS PDF

    BD787

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 Com plem entary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high-speed switching applications. • • • 4 AMPERE POWER TRANSISTORS COMPLEMENTARY


    OCR Scan
    BD787, BD788 BD787 BD788 BD787 Cto150° PDF

    Untitled

    Abstract: No abstract text available
    Text: L3UQn-m nni , 0017701 Tib MITSUBISHI RF POWER TRANSISTOR — NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4167 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r UHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m


    OCR Scan
    2SC4167 PDF

    an-9744

    Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
    Text: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.


    OCR Scan
    HI1177 HI5628 HI5640 HI5660 HI5662 HI5667 HI5721 HI5728 HI5731 HI5741 an-9744 Transistor 3-347 AN9726 AN9718 Transistor 3-354 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan
    bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98 PDF

    VEE25

    Abstract: UCN5840A UCN5840LW UCN5841A UCN5842LW UCN5843A allegro 5841 UCN5841ALW
    Text: ALLEGRO MICROSYSTEMS INC blE J> Mt 050433Û QQQbQSl 5841 5S43 • ALGR THRU BiM O S I I 8 -B IT SEBIAL-INPU T, LATC H ED D B IV EB S U C N 5841A - UCN5843A vEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STR O B E O U TP U T E N A B LE


    OCR Scan
    UCN5841A UCN5843A UCN5841A/LW) UCN5842A/LW) UCN5843A/LW) V-15V VEE25 UCN5840A UCN5840LW UCN5842LW UCN5843A allegro 5841 UCN5841ALW PDF

    c 3198 transistor

    Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
    Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed


    OCR Scan
    ----2N6384 2N6385 c 3198 transistor 2N6383 IC 6648 2N6648 sc 3198 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 5841 5843 THRU BiMOS U 8-BIT SERIAL-INPUT, LATCHED DRIVERS U C N 5841A - UCN5843A VEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STRO BE OU TP U T ENA B LE V EE Dwg. No. A-12,659 ABSOLUTE MAXIMUM RATINGS a t 25°C F ree-A ir T e m p e ra tu re


    OCR Scan
    UCN5843A UCN5841A/LW) UCN5842A/LW) UCN5843A/LW) PDF

    5841A

    Abstract: No abstract text available
    Text: 5841 5843 T H RI BiMOS II 8-B IT SERIAL-INPUT, LATCH ED DRIVERS U C N 5841A - U C N 5843A V ee C LO C K S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L D A TA OUT STR O BE O UTP UT E N A B L E V EE Dwg. No A-12,659 A B S O L U T E M A X IM U M R A T IN G S


    OCR Scan
    UCN5840A/LW 5841A PDF

    Optocouplers App Note

    Abstract: No abstract text available
    Text: TIL191, TILI 92, TIL193, TIL191A, TIL192A, TIL193A TILI 91B, TIL192B, TIL193B OPTOCOUPLERS D 3 2 6 3 , A P R IL 1 9 8 9 - R E V I S E D S E P T E M B E R 1 9 8 9 Gallium Arsenide Diode Infrared Source • Source Is Optically Coupled to Silicon N-P-N Phototransistor


    OCR Scan
    TIL191, TIL193, TIL191A, TIL192A, TIL193A TIL192B, TIL193B E65085 TIL191 TIL192 Optocouplers App Note PDF

    lm78s40

    Abstract: shottky 100 amp J16A LM78S40CN LM78S40J LM78S40N N16E 025J1 op amp as comparator sc 3198 transistor
    Text: LM78S40 National Semiconductor LM78S40 Universal Switching Regulator Subsystem General Description Features The LM78S40 is a monolithic regulator subsystem consist­ ing of all the active building blocks necessary for switching regulator systems. The device consists of a temperature


    OCR Scan
    LM78S40 LM78S40 02jiF TL/H/10057-10 bS0112H shottky 100 amp J16A LM78S40CN LM78S40J LM78S40N N16E 025J1 op amp as comparator sc 3198 transistor PDF

    EZ 707

    Abstract: 2SC3544 EZ 0710 EZ 728
    Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    OCR Scan
    NE944 EZ 707 2SC3544 EZ 0710 EZ 728 PDF

    Untitled

    Abstract: No abstract text available
    Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage


    OCR Scan
    CA3410A, CA3410 CA3410E CA3410 PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan
    NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan
    MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 PDF