Untitled
Abstract: No abstract text available
Text: 1843-3205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ö V(BR)CBO (V)325 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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req25M
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Untitled
Abstract: No abstract text available
Text: 1814-3205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ö V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
time500n
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TA-2926
Abstract: CPH3105 CPH3205 3205 ic
Text: Ordering number:ENN6084B PNP/NPN Silicon Epitaxial Planar Transistors CPH3105/3205 High-Current Switching Applications Applications Package Dimensions • DC-DC converters relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2150A [CPH3105/3205] 2.9
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ENN6084B
CPH3105/3205
CPH3105/3205]
CPH3105
TA-2926
CPH3105
CPH3205
3205 ic
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3205 ic
Abstract: No abstract text available
Text: Ordering number:0000000 PNP/NPN Silicon Epitaxial Planar Transistors MCH3105/3205 High-Current Switching Applications TENTATIVE Applications Package Dimensions • DC-DC converters relay drivers, lamp drivers, motor drivers, strobes. unit:mm 0000A [MCPH3105/3205]
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MCH3105/3205
MCPH3105/3205]
MCPH3105
3205 ic
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TRANSISTOR C 3205
Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf
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ZTX576
IC/10
-100mA,
-10mA,
-300mA,
-50mA,
100MHz
TRANSISTOR C 3205
3205 transistor
TRANSISTOR BR C 3205
transistor TD-100
ZTX576
DSA003769
3205 ic
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MT 3205
Abstract: 908-185 DPS 185 clock chime circuit CF5762AB0 1786XT chime melody
Text: CF5762AB0 Analog Chime Clock CMOS IC OVERVIEW FEATURES • ■ ■ ■ ■ ■ ■ ina ry The CF5762AB0 is an analog chime clock CMOS IC that uses a 4.194304MHz crystal oscillator source. It can play a melody and hour chime when triggered by an hourly signal. It generates output sound using dual pitch
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CF5762AB0
CF5762AB0
194304MHz
NP0014AE
MT 3205
908-185
DPS 185
clock chime circuit
1786XT
chime melody
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transistor 3205 equivalent
Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar
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TRANSISTOR C 3205
Abstract: No abstract text available
Text: CEM6056 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 15A, RDS ON = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
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CEM6056
TRANSISTOR C 3205
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2520P
Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant
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40-T1
70-T1
70B-HP
HPAC140
2520P
schottky diode 43t
BFY193
5613
CFY 19
CFY 18
micro-x 420
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C3205 transistor
Abstract: Transistor C3205 C3205 intel 3205 c3205 y P3205 c3205 equivalent 3205 sc 3205 C 3205
Text: intei* 3205 3404 3205 HIGH SPEED 1 OUT OF 8 BINARY DECODER 3404 HIGH SPEED 6-BIT LATCH 18ns Max. Delay Over 0°C to 75° C Temperature: 3205 12ns Max. Data to Output Delay Over 0°C to 75° C Temperature: 3404 Directly Compatible With DTL and TTL Logic Circuits
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16-Pin
p3404
c3404
ta-25Â
C3205 transistor
Transistor C3205
C3205
intel 3205
c3205 y
P3205
c3205 equivalent
3205
sc 3205
C 3205
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2SC3205
Abstract: 2SA1273 TRANSISTOR C 3205 2sC3205 transistor 2sa1273 transistor transistor 2sc3205 3205 transistor 2SC 3205 *A1273 Transistor transistor 2SA1273
Text: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SA1273 APPLICATIONS • Audi o P o w e r A m p l i f i e r A p p l i c a t i o n s . ( F E A TU R E S • C o m p l e m e n t a r y to 2 S C 3205 and 3 W a t t s Ou t p u t A p p l i c a t i o n s .
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2SA1273
2SC3205
Ta-25
--30V,
2SC3205
2SA1273
TRANSISTOR C 3205
2sC3205 transistor
2sa1273 transistor
transistor 2sc3205
3205 transistor
2SC 3205
*A1273 Transistor
transistor 2SA1273
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TRANSISTOR C 3205
Abstract: transistor c 3228 TRANSISTOR C 3205 CIRCUIT DIAGRAM 3205 transistor lambda LAS 3205 las 3228 lambda Lambda POWER Hybrid VOLTAGE REGULATOR LAMBDA Voltage Regulator CURRENT12-3 LAS 3228
Text: VEEC O/L AM BD A SEMICOND GE D | T4M7b3b ODOOTÖB 1 T - S Z 'U A LAMBDA LINEAR REGULATORS -1 3 LAS 3 2 0 0 SERIES 10 AMP, 140 WATT POSITIVE HYBRID VOLTAGE REGULATORS . ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAXIMUM UNITS V,N 40 Volts Input-O utput
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0D007Ã
000D7Ã
075-k-|
TRANSISTOR C 3205
transistor c 3228
TRANSISTOR C 3205 CIRCUIT DIAGRAM
3205 transistor
lambda LAS 3205
las 3228 lambda
Lambda POWER Hybrid VOLTAGE REGULATOR
LAMBDA Voltage Regulator
CURRENT12-3
LAS 3228
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3205 transistor
Abstract: TRANSISTOR C 3205 transistor c 3228 las 3228 lambda LAS3205 TRANSISTOR C 3205 CIRCUIT DIAGRAM LAS3224 PENI LAS 3205 LAS3228
Text: A LAMBDA LINEAR REGULATORS LAS 3200 SERIES 10 AMP, 140 WATT POSITIVE HYBRID VOLTAGE REGULATORS PARAM ETER FEATURES • 0.1% line regulation • 0.2% load regulation • 0.015% temperature coefficient • Low noise • Remote programming and remote sense • Electrically isolated case
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TRANSISTOR C 3205
Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
Text: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,
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m435
Abstract: 2042A 2SC3951
Text: Ordering number: EN 2435A 2SA1536/2SC3951 N0.2435A smiYo PNP/NPN Epitaxial Planar Silicon Transistor i Ultrahigh-Definition CRT Display Video Output Applications A pplications • High-definition CRT display video output, wide-band amp Features -H ig h fr: fr=600M H z
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2SA1536/2SC3951
600MHz
m435
2042A
2SC3951
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2SA16
Abstract: 120Vmin 2SA1696 2SC4473 C4473 SA16 4473 transistor A1696
Text: Ordering number : EN 3017 2SA1696/2SC4473 No.3017 PN P/N PN Epitaxial Planar Silicon Transistor SANYO i High-Definition CRT Display Video Output Applications A p p licatio n s • H igh-definition CRT display video output, wide-band amp. F e a tu re s •H ig h f r : fr=500M H z
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EN3017
2SA1696/2SC4473
500MHz
120Vmin
C4473â
2sa16
36/2s0
2SA16
120Vmin
2SA1696
2SC4473
C4473
SA16
4473 transistor
A1696
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transistor c 3205
Abstract: 3205 ic
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 IS S U E 4 - FEBRUARY 1996_ FEATURES * * 25 Volt VCE0 3 A m p continuous current * Low saturation voltage * Excellent hFE specified up to 6A C O M P L E M E N T A R Y TYPE -
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OT223
FZT649
FZT749
300ns.
100ms
transistor c 3205
3205 ic
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Untitled
Abstract: No abstract text available
Text: SENTECH CORP SÔE 013^13^ D 3Q03213 1A1 10 AMP, 140 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS SYMBOL MAXIMUM UNITS V,N 40 Volts Input-Output Voltage Differential V,N-Vo 28.6 Volts PARAMETER Input Voltage FEATURES • • • • •
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3Q03213
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ZTX601
Abstract: l05a T092 ZTX600 ZTX601 B E C
Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94 FEA T U R E S * 160 Volt V CE0 * * 1 Amp continuous current Gain of 5K at lc =1 Am p * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage
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ZTX600
ZTX601
ZTX600
ZTX601
300jis.
l05a
T092
ZTX601 B E C
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 200 Volt V,CEO 1 Amp continuous current P,or 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -200 V Collector-Emitter Voltage
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001G35S
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BSY52
Abstract: BSY51 BSY 51 bsy 39
Text: BSY51 BSY52 SILICON PLANAR NPN PRELIM IN A R Y DATA G EN ER A L PURPOSE A M PLIFIERS The B S Y 51 and B S Y 52 are silicon planar epitaxial NPN transistors in Jedec T'O -39 metal case, intended for use in high performance am plifier, oscillator and switching circuits.
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BSY51
BSY52
BSY52
BSY 51
bsy 39
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transistor BD 522
Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
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BD801
BD801
transistor BD 522
BDS08
transistor 3203
Transistor 3202 1 A 60
221A-06
10 watt power transistor bd
BD802
BD808
BD810
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S7190A
Abstract: SI 3205
Text: S-7190A 64-bit THERMAL HEAD DRIVER The S-7190A is a thermal print head driver, consisting of a CMOS 64-bit shift reg iste r with s e ria l input and serial/parallel output, a C M O S 64-bit latch and 64 Nch opendrain drivers. It directly drives a thin film or a thick
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S-7190A
64-bit
S-7190A
DDG301fi
S7190A
SI 3205
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Untitled
Abstract: No abstract text available
Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed
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NE98108
NE98141
NE981
NE98141
s-117
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