C 36 TO BD 25 M Search Results

C 36 TO BD 25 M Result Highlights (5)

Part	Manufacturer	Description
ADC1038CIWM	Rochester Electronics LLC	ADC1038 - ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20
TL505CN	Rochester Electronics LLC	TL505 - Analog to Digital Converter
ML2258CIQ	Rochester Electronics LLC	ML2258 - ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28
CA3310AM	Rochester Electronics LLC	CA3310A - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24
CA3310M	Rochester Electronics LLC	CA3310 - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24

C 36 TO BD 25 M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3055t Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771 Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W\| 3 3 3 3 3 80 80 90 100 115	OCR Scan	2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771	PDF
TIP 34 pnp Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c Text: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) \|C Typ type NPN PNP BD BD BD BD 239 239 A 239 B	OCR Scan		PDF
BD NPN transistors Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442 Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710	OCR Scan	O-126 BD NPN transistors BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442	PDF
BD NPN transistors 177 Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42 Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15	OCR Scan	BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180	PDF
bd437 siemens Abstract: transistor d437 D437 transistor bd 439 Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase	OCR Scan	QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439	PDF
bo434 Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202 Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages	OCR Scan	00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202	PDF
Transistors bd 133 Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135 Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20	OCR Scan	TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135	PDF
JE800 Abstract: JE802 JE702 Text: SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES EPITAXIAL BA SE N P N anc P N P typos perfect com plem entary pairs M edium V C e o range (22 to 100 V) M edium sw itching speed M edium fT (2 to 20 M H z) H igh ru gge d n e ss M onolithic Darlington capability	OCR Scan	-TO-126 BD441 BD681 JE800 JE801 JE802 JE803 2N5190 2N5191 2N5192 JE702	PDF
TIP 29 transistor Abstract: BD239 TEXAS INSTRUMENTS B0239 transistor BD 140 transistor tip 3055 TIP 32 transistor tip 30 tip 226 Tip 3054 transistor TIP 32 Text: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted	OCR Scan	BD239, BD239A, BD239B, BD239C BD240A-C BD239 BD239A BD239B 40PEP TIP 29 transistor BD239 TEXAS INSTRUMENTS B0239 transistor BD 140 transistor tip 3055 TIP 32 transistor tip 30 tip 226 Tip 3054 transistor TIP 32	PDF
BD249 TEXAS INSTRUMENTS Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P	OCR Scan	BD249, BD249A, BD249B, BD249C BD250A-C BD249 BD149A BD249B 40PEP BD249 TEXAS INSTRUMENTS BD149 BD249C TEXAS INSTRUMENTS B0249C B0249A 3055 5C pnp transistor B0249 BD249A	PDF
transistor BD245 Abstract: TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242 BD242A BD242B TO-3P Text: B0242, BD242A, BD242B, B0242C FOB P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD241A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current M in f t o f 3 M H z at 10 V , 500 mA	OCR Scan	BD242, BD242A, BD242B, BD242C BD241A-C BD242 BD242A BD242B 40PEP 80PEP transistor BD245 TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242B TO-3P	PDF
B0241A Abstract: TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32 BD241 BD241B Text: BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE W ITH BD242A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current Min fT of 3 MHz at 10 V , 500 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted	OCR Scan	BD241, BD241A, BD241B, BD241C BD242A-C BD241 BD241A BD241B 40PEP B0241A TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32	PDF
transistor tip 3055 Abstract: Tip 3054 BD243A..C transistor BD 240 BD 139 transistor TIP 50 transistor BD249 TIP 3055 transistor transistor bd 139 BD 245 Text: BD244, BD244A, BD244B, BD244C FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD243A-C 65 W at 2 5 ° C Case Temperature 6 A Rated Collector Current M in f T of 3 M H z at 10 V , 5 0 0 mA	OCR Scan	BD244, BD244A, BD244B, BD244C BD243A-C BD244 BD244A BD244B 40PEP 80PEP transistor tip 3055 Tip 3054 BD243A..C transistor BD 240 BD 139 transistor TIP 50 transistor BD249 TIP 3055 transistor transistor bd 139 BD 245	PDF
3055 5C pnp transistor Abstract: TIP 35 transistor BD243 transistor BD 246 transistor bd 242 8D243C transistor tip 3055 BD 245 TIP 29 transistor BD243A Text: BD243, BD243A, BD243B, BD243C FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD244A-C 65 W at 25 °C Case Temperature 6 A Rated Collector Current Min f j of 3 MHz at 10 V , 500 mA mechanical data TO-66P All dimensions are in mm	OCR Scan	BD243, BD243A, BD243B, BD243C BD244A-C BD243 40PEP 80PEP OT-32 OT-32 3055 5C pnp transistor TIP 35 transistor BD243 transistor BD 246 transistor bd 242 8D243C transistor tip 3055 BD 245 TIP 29 transistor BD243A	PDF

tip 420 transistor Abstract: BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 BD246 transistor BD 246 b TIP 34 pnp BD245A.C tip npn transistor BD 246 Text: BD246, BD246A, BD246B, BD246C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E SIG N E D FOR C O M P L E M E N T A R Y USE W IT H BD245A-C 80 W at 25 °C Case Temperature 10 A Rated Collector Current Min f T o f 3 M H z at 10 V , 500 mA	OCR Scan	BD246, BD246A, BD246B, BD246C BD245A-C BD246 BD246A BD246B 40PEP 80PEP tip 420 transistor BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 transistor BD 246 b TIP 34 pnp BD245A.C tip npn transistor BD 246	PDF
TIP 29 transistor Abstract: BD250C transistor BD 240 transistor tip 3055 transistor tip 62 bd250 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn Text: BD250, BD250A, BD250B, BD250C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD249A-C 125 W at 25 °C Case Temperature 15 A rated Collector Current Min f T of 3 M H z at 10 V , 1 A	OCR Scan	BD250, BD250A, BD250B, BD250C BD249A-C BD250 BD250A BD250B 40PEP TIP 29 transistor BD250C transistor BD 240 transistor tip 3055 transistor tip 62 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn	PDF
BD633 Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120 Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.	OCR Scan	BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120	PDF
TIP 29 transistor Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor Text: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature	OCR Scan	TIP32, T1P32A, TIP32B. TIP32C TIP31, TIP31A, TIP31B, TIP31C TIP32 TIP32A TIP 29 transistor TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor	PDF
BD 440 PNP transistors Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441 Text: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W	OCR Scan	verb00 BD 440 PNP transistors BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441	PDF
BD441 Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439 Text: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power	OCR Scan	N125A BD441 bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439	PDF
tfk 434 Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A Text: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung	OCR Scan	BD433, tfk 434 tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A	PDF
BD 139 140 Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117 Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN \| min PNP (V) (A) max (W) max (V) (A) I \| (A) (A) high speed transistors 2N 5296 s tf t typ* max max max M (ws ) min (M Hz)	OCR Scan	O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117	PDF
BD436 Abstract: BD 434 B0436 d341 LT 436 BD434 Text: BD 434 - BD 436 'W Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannung speziell für Autoradiobetrieb Features: • Low supply voltage especially tor automobil radio	OCR Scan		PDF
B0738 Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073 Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m	OCR Scan	BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073	PDF

C 36 TO BD 25 M Search Results

C 36 TO BD 25 M Result Highlights (5)

C 36 TO BD 25 M Datasheets Context Search

3055t

TIP 34 pnp

BD NPN transistors

BD NPN transistors 177

bd437 siemens

bo434

Transistors bd 133

JE800

TIP 29 transistor

BD249 TEXAS INSTRUMENTS

transistor BD245

B0241A

transistor tip 3055

3055 5C pnp transistor

tip 420 transistor

TIP 29 transistor

BD633

TIP 29 transistor

BD 440 PNP transistors

BD441

tfk 434

BD 139 140

BD436

B0738