74067
Abstract: SI4946BEY-T1-E3 SI4946EY-T1-E3 Si4946BEY Dual N-Channel 60-V D-S SI4946EY-T1 Si4946EY
Text: Specification Comparison Vishay Siliconix Si4946BEY vs. Si4946EY Description: Dual N-Channel, 60 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4946BEY-T1-E3 Replaces Si4946EY-T1-E3 Si4946BEY-T1 Replaces Si4946EY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si4946BEY
Si4946EY
Si4946BEY-T1-E3
Si4946EY-T1-E3
Si4946BEY-T1
Si4946EY-T1
74067
Dual N-Channel 60-V D-S
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DIN 72585
Abstract: No abstract text available
Text: 2014 Professional Quality Bits Complete Bits Program Toll Free: 800 494-6104 2 Terminator Impact Insert & Power Bit Sets High Performance Bits DESCRIPTION Page DESCRIPTION Page Terminator Impact Bits Slotted Dura Insert Bits 27 Phillips Dura Bits 27 4-5
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C S 6822
Abstract: S 6822 7818a 7812a DH 514 89052 DH822 DH 636 MH 74150 60034
Text: PART NUMBER INDEX Type pg Type CJ 1023 C J 1024 C J 1201 CJ 2002 CJ 2501 CJ 4002 CJ 5001 CJ 8002 C S 1010 C S 1020 C S 1021 C S 1033 C S 1210 C S 1220 C S 1221 C S 1222 C S 1510 C S 1520 C S 1521 C S 1522 C S 1810 C S 1821 C S 1822 C S 2200 C S 2210 C S 2221
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ic isl 887
Abstract: 69406-1 63601-1 MH51208ANA-85H MH51208ANA-85L Mitsubishi Semiconductor America
Text: MITSUBISHI LSIs oofUN"nabV MH51208ANA-85L,-10L,-12L,-15L/ MH51208ANA-85H,-10H,-12H,-15H 4194304-BIT 524288-W0RD BY 8-BIT CM0S STATIC RAM MODULE DESCRIPTION PIN C O N F IG U R A T IO N (TOP VIEW ) T h e M H 5 1 2 0 8 A N A is a 4 1 9 4 3 0 4 bits C M O S static R A M
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MH51208ANA-85L
MH51208ANA-85H
4194304-BIT
524288-W0RD
MH51208ANA
524288-words
128KX8
M5M51008VP/RV)
ic isl 887
69406-1
63601-1
Mitsubishi Semiconductor America
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5M 44100J, L-8, -10 4 1 9 4 3 0 4 - B IT 4 1 9 4 3 0 4 - WORD BY 1-B IT DYNAM IC RAM D ES C R IP TIO N This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1-bit dynam ic RAMs, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance CM O S process, and
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44100J,
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74067
Abstract: 74008 74004 74016 74680 74470 74100 74054 74006 74030
Text: TEKELE C O M l> O N t W HIGH TUNING RATIO >10 SILICON ABRUPT JUNCTION TUNING VARACTORS VßR = 90 V This series of high Q epi-junction microwave tuning varactors (90 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to L Pand.
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Cto/Ct90
ctc/ct90
50MHz
74067
74008
74004
74016
74680
74470
74100
74054
74006
74030
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs dQfUW"nabV MH51208ANA-85L,-10L,-12L,-15L/ MH51208ANA -85H,-10H,-12H,-15H 4 1 9 4 3 0 4 -B IT 5 2 4 2 8 8 -W 0 R D BY 8-B IT C M 0S STATIC RAM MODULE DESCRIPTION The M H 5 1 2 0 8 A N A is a 4 1 9 4 3 0 4 bits CMOS static RAM PIN CONFIGURATION (TOP VIEW)
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MH51208ANA-85L
-15L/
MH51208ANA
128KX8
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Untitled
Abstract: No abstract text available
Text: HIGH TUNING RATIO >10 SILICON ABRUPT JUNCTION TUNING VARACTORS VBR = 90 V This series of high Q epi-junction microwave tuning varactors (90 V) incorporates a passivated mesa technology, It is well suited for frequency tuning applications up to L Pand. Packaged D iodes (?)
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Cjo/Cj90>
50MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M p B B -' 5 M 4 V 4 1 9 0 J , T P , R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S N » N A .r V s,e <» A S T P A G E MODE 4718592-BIT 262144-WORD B Y 18-BIT DYNAMIC RAM D E SC R IP T IO N This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is
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4718592-BIT
262144-WORD
18-BIT
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74008
Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Text: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND
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Untitled
Abstract: No abstract text available
Text: JB i MITSUBISHI LS Is ^ M 5 M 5 2 5 7 B P , J - 15 ,-17 ,-2 0 ,-2 5 , -2 0 L,- 2 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicongate
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262144-BIT
262144-WORD
M5M5257B
300mW
M5M5257BP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5M 442256A JrAL-7,-8,-10 sc* 1 0 4 8 S 7 6 -B IT DUAL-PORT DYNAMIC RAM DESCRIPTION M 5 M 44 2 25 6 A J , AL is a high speed 1048 5 7 6 -b it Dual Port Dynamic Memory equippedwith a 2 5 6 K x 4 Dynamic RAM Port and a 512 x 4 Serial Read/Write Port.
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42256A
33MHz.
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 4 1 0 0 J ,L ,T P ,R T - 6 ,- 7 ,- 8 , - 6 S ,- 7 S ,- 8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM ? ^ D ESCRIPTIO N This is a family of 4 1 9 4 3 0 4 - word by 1 -b it dynamic RAMS, PIN CO NFIGU RATIO N (TO P VIEW )
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4194304-BIT
4194304-WORD
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Untitled
Abstract: No abstract text available
Text: Ei 1 MITSUBISHI LS Is 'V f M5M23160-XXXP,FP,VP,RV 16777216-BIT 1048576- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M 5M 23160-XXXP(,FP,VP or RV)is a 16777216-bit mask-programmable high speed read-only memory.
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M5M23160-XXXP
16777216-BIT
16-BIT)
/16777216-BIT
23160-XXXP(
42pin
44pin
48pin
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