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    C0805C103K5RAC, AVX Price and Stock

    Kyocera AVX Components PBRC4.91HR50X000

    Ceramic Resonator, 4.91Mhz Nom Rohs Compliant: Yes |Kyocera Avx PBRC4.91HR50X000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PBRC4.91HR50X000 273,100
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    • 1000 $0.5177
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    Kyocera AVX Components 06035A471KAT2A

    0603 470pF Ceramic Multilayer Capacitor, 50 VDC, +125degC, C0G Dielec, +/-10% | AVX 06035A471KAT2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 06035A471KAT2A 44,000
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    Kyocera AVX Components CX5032YB32000M0FZFZZ

    CX5032YB32000M0FZFZZ, Avx
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CX5032YB32000M0FZFZZ 30,000
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    Kyocera AVX Components 1206AA221JAT1A

    1206 HV 220pF Ceramic Multilayer Cap, 1000Vdc, +125C, C0G Dielectric, +/-5% SMD | AVX 1206AA221JAT1A
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    Onlinecomponents.com 1206AA221JAT1A 6,000
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    Kyocera AVX Components TAJR106K006RNT

    TAJR106K006RNT, Avx
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TAJR106K006RNT 2,500
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    Find more C0805C103K5RAC, AVX price and stock on Findchips.com

    C0805C103K5RAC, AVX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC Z5U 1KV

    Abstract: kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02
    Text: Manufacturer’s Cross Reference and Multilayer Ceramic Chip Capacitor Part Numbering P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-6652 www.kemet.com F3068H 10/05 KEMET Includes Commercial, High voltage, Open mode, COTS, Medical, and Military


    Original     		PDF F3068H GR900 MIL-PRF-55681 CDR01-CDR06 MIL-PRF-55681-Metricowloon BC Z5U 1KV kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02

    QFP-240

    Abstract: RM73B2BT000 16L8 74HC04 IC-74 SOIC16 TNETA1500 TNETA1570 avx c0805c103k5rac HLMP3502-010
    Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1570/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE *4atm@.ti.com


    Original     		PDF TNETA1570/TNETA1500 TNETA1570 TNETA1500 Instrument01-010 HLMP3502-010 C1206C104K5RAC QFP-240 RM73B2BT000 16L8 74HC04 IC-74 SOIC16 avx c0805c103k5rac HLMP3502-010

    INDUCTOR 220uH

    Abstract: QFP240 C7343 RK73H2BT1000F Kemet r76 AS7C512-15JC CONN1X2 QFP-240 TNETA1570 National 74hc04
    Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1575/TNETA1585 & TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A June 27, 1996 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE


    Original     		PDF TNETA1575/TNETA1585 TNETA1500 TNETA1575 TNETA1570 TNETA1500 Te20A07PTM00 TIBPAL16L8-15FCN plcc20 INDUCTOR 220uH QFP240 C7343 RK73H2BT1000F Kemet r76 AS7C512-15JC CONN1X2 QFP-240 National 74hc04

    CW20C104K

    Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
    Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,


    Original     		PDF AGA100M050 SKA100M050 AGA100M063 SKA100M063 AFK477M10F24T AFK686M16D16T AFK107M16D16T AFK157M16X16T AFK158M16H32T AFK226M16C12T CW20C104K CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K

    HLMP-3502-010

    Abstract: HLMP3502-010 RM73B2BT000J 213-032-602 hs106-nd 74ACT72241-15ns murata sar 213032602 TSW-114-07-T-S HFBR-5205
    Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1561/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE *4atm@.ti.com


    Original     		PDF TNETA1561/TNETA1500 TNETA1561 TNETA1500 InstrumentTDC1561A TDC1500A HFBR-5205 MCM6206D HLMP-3502-010 HLMP3502-010 RM73B2BT000J 213-032-602 hs106-nd 74ACT72241-15ns murata sar 213032602 TSW-114-07-T-S HFBR-5205

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304L MMRF1304LR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    ATC600S3R3BT250XT

    Abstract: J376 MW7IC008 vgls
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT J376 MW7IC008 vgls

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    MW7IC008N

    Abstract: MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234

    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    TKP 470 M

    Abstract: No abstract text available
    Text: Reference Design Evaluation Board for flowIPM 1B Power Modules EVA P95x for flowIPM 1B Reference Design no.: RD_2011-03_002-v02 Table of Contents 1 In tr o d uc t i o n . E rr or ! Boo km a rk not def ine d.


    Original     		PDF 002-v02 Mec05, 10ppm TKP 470 M

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS004N AFT05MS004NT1 AFT504

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 25cale

    A5M06

    Abstract: Transistor Z17
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06

    RM73B2B

    Abstract: eta trw bead murata RM73B2BT102J VJ21 HLMP3301-010 HLMP3502 RM73B3A qi 20pin HFBR-5205
    Text: I TEXAS INSTRUMENTS Semiconductor Group TNETA1561/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155-Mbit/s, Multimode Fiber Connector SD N V007 July 12,1995 Questions should be directed to: TNETA TECHNICAL SUPPORT LINE *4atm@.ti.com


    OCR Scan     		PDF TNETA1561/TNETA1500 155-Mbit/s, SDNV007 TNETA1561 TNETA1500 TNETA1561 SDNS01 9E668 RM73B2B eta trw bead murata RM73B2BT102J VJ21 HLMP3301-010 HLMP3502 RM73B3A qi 20pin HFBR-5205