transistor C128
Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
Text: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes
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C1-28/C1-28Z
C1-28
150oCNDS
transistor C128
c128 transistor
28c128
C1-28Z
transistor c1-28
GHZ TECHNOLOGY
55FT
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transistor c128
Abstract: c128 transistor ASI10791 C1-28 28c128
Text: C1-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-28 is Designed for 28 Volt Class C Amplifier Applications up to 500 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: E • PG = 12 dB Typ. at 1.0 W/400 MHz • η C = 65 % Typ. at 1.0 W/400 MHz • Omnigold Metalization System
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C1-28
C1-28
transistor c128
c128 transistor
ASI10791
28c128
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transistor c128
Abstract: c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128
Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability
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STC128M
O-92M
KST-1003-000
100mA
500mA,
transistor c128
c128 transistor
c128 transistor datasheet
TRANSISTOR 1003
STC128M
KST-1003-000
C128
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transistor C128
Abstract: c128 transistor transistor package TO-92M C128 STC128M
Text: STC128M NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω Max. (IB=1mA)
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STC128M
O-92M
KSD-T0B003-000
transistor C128
c128 transistor
transistor package TO-92M
C128
STC128M
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transistor c128
Abstract: c128 transistor
Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability
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STC128M
STC128M
O-92M
KST-I003-000
transistor c128
c128 transistor
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transistor c128
Abstract: No abstract text available
Text: STC128M NPN Silicon Transistor Features Low sat urat ion m edium current applicat ion Ext rem ely low collect or sat urat ion volt age Suit able for low volt age large current drivers High DC current gain and large current capabilit y Low on resist ance : RON= 0.6Ω Max. ( I B= 1m A)
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STC128M
O-92M
KSD-T0B003-000
transistor c128
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Untitled
Abstract: No abstract text available
Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having
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PIC32MX7Â
PIC32MX795F512L
PIC32Â
PIC32
PIC32MX7
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TS PQ4 24
Abstract: TM4C129LNCZAD
Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having
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TM4C129L
TS PQ4 24
TM4C129LNCZAD
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C134 transistor
Abstract: No abstract text available
Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS
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LM4F232H5QD
C134 transistor
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Ampire 128 x 64
Abstract: Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD
Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AF-128128KFIQY APPROVED BY DATE APPROVED BY Date : 2002/11/4 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY 1 RECORD OF REVISION Revision Date 2002/11/4 Date : 2002/11/4 Contents
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AF-128128KFIQY
HD66750S
IST3168CA1
Ampire 128 x 64
Ampire 128 64
Ampire 128
Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART
transistor c128
AF128128K
128x128 LCD
1.5 128x128 Color LCD
Ampire
Ampire LCD
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db3 c113
Abstract: Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27
Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AT-128128H1FI-00H APPROVED BY DATE Approved For Specifications Approved For Specifications & Sample APPROVED BY Date : 2003/2/21 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY
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AT-128128H1FI-00H
db3 c113
Ampire 128 x 64
transistor c128
Ampire 128
128x128 LCD
Ampire 128 64
1.5 128x128 Color LCD
Ampire LCD
HD66750S
1.5 128x128 Color LCD 27
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SWITCHING TRANSISTOR C134
Abstract: IC104 15l104 NTC cebi crystal oscillator KDS s104 diode sma TRANSISTOR c104 AN2772 MBC13900 MC13192DS
Text: MC13192 Evaluation Board Reference Manual Document Number: MC13192EVBRM Rev. 1.2 09/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
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MC13192
MC13192EVBRM
CH370
RS-232
MC13192EVB.
MAX3318E)
MC9S08GT60
IC104
SWITCHING TRANSISTOR C134
15l104
NTC cebi
crystal oscillator KDS
s104 diode sma
TRANSISTOR c104
AN2772
MBC13900
MC13192DS
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IC-106
Abstract: IC104 TRANSISTOR c104 MBC13900 MC13192 MC9S08GT60 interfacing rs232 to zigbee IC106
Text: MC13192 Evaluation Board Reference Manual MC13192EVBRM/D Rev. 1.0, 09/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 Japan: Freescale Semiconductor Japan Ltd.
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MC13192
MC13192EVBRM/D
RS-232
MC13192EVB.
MAX3318E)
MC9S08GT60
IC104
IC-106
TRANSISTOR c104
MBC13900
interfacing rs232 to zigbee
IC106
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transistor c118
Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
a080304
transistor c118
C124 transistor
transisTOR C123
transistor c114 diagram
for C114 transistor
transistor c114
transistor c117
587-1352-1-ND
PM820
transistor C124
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IRGPC50FD2
Abstract: No abstract text available
Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC50FD2
10kHz)
O-247AC
C-132
IRGPC50FD2
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transistor c114
Abstract: No abstract text available
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
transistor c114
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600V 25A Ultrafast Diode
Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC50FD2
10kHz)
O-247AC
C-132
600V 25A Ultrafast Diode
IRGPC50FD2
IRGPC50FD
600v 20a IGBT
transistor c128 current rating
igbt 600v 20a
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TL306
Abstract: TL184 TL167 TL307
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
96stances.
TL306
TL184
TL167
TL307
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transistor c128
Abstract: 55FT
Text: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This
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C1-28/C1-28Z
Cl-28
transistor c128
55FT
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.
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01fl2!
C1-28
500MHz.
C1-28Z.
C1-28/C1-28Z
-65to
GDD117D
C1-28/Z-4
acrian RF POWER TRANSISTOR
acrian RF POWER TRANSISTOR 300 w
transistor c128
C1-28-2
CM25-28
transistor d 571
CM10-28
Acrian
transistor c1-28
acrian inc
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D773
Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Text: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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SGSP368/P369
SGSP468/P469
SGSP568/P569
SP368
SP468
SP568
SP369
SP469
SP569
C-130
D773
P369
diode sg 46
diode sg 69
P469
SGSP368
SGSP3B8/P369
SGSP469
sgsp468
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IRGPC50FD2
Abstract: No abstract text available
Text: PD - 9.800 International li«] Rectifier IRGPC50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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10kHz)
IRGPC50FD2
C-131
O-247AC
C-132
IRGPC50FD2
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Untitled
Abstract: No abstract text available
Text: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC50FD2
10kHz)
C-131
SS45E
D01TJE1
O-247AC
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1RFD123
Abstract: 1RFD120
Text: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE
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T-35-25
C-127
IRFD120,
IRFD123
S545E
G0Gfl37c
C-128
1RFD123
1RFD120
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