U2TA510
Abstract: Unitrode Semiconductor U2TA506
Text: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction
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13M7cï
0D1E507
U2TA506
U2TA508
U2TA510
U2TA51C
10MHz
300/is;
U2TA506,
U2TA510
Unitrode Semiconductor
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2n6789
Abstract: No abstract text available
Text: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability
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c13M7cit
QG1G54Û
2N6789
2N6790
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip
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1N483B;
1N483B
1N485B;
1N485B
MIL-S-19500/118
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ltsj
Abstract: UFN350 K52A
Text: UNITRODE CORP 9347963 92D U N I T R O D E CORP D 10666 POWER MOSFET TRANSISTORS UFN350 UFN351 UFN352 UFN353 400 Volt, 0.3 Ohm N-Channel FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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UFN350
UFN351
UFN352
UFN353
swi509
UFN351
FN350
-r-33-i
ltsj
K52A
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