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    C150 DIODE Search Results

    C150 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    C150 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C190AKT

    Abstract: LTST-C170XKT ltst-c155 LTST-C190XKT LTST-C155XKT ckt-100
    Text: Chip LED Lamp LTST- C150/170/190AKT Amber LTST- C150/170/190CKT AlGaAs Red LTST- C150/170/190EKT Red Orange LTST- C150/170/190GKT Green LTST- C150/170/190YKT Yellow LTST- C155GEKT Red Orange Dual Color LTST- C155GYKT Green-Yellow Dual Color Features Package in 8mm tape on 7" diameter reels.


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    PDF C150/170/190AKT C150/170/190CKT C150/170/190EKT C150/170/190GKT C150/170/190YKT C155GEKT C155GYKT C190AKT LTST-C170XKT ltst-c155 LTST-C190XKT LTST-C155XKT ckt-100

    LTSTC150KAKT

    Abstract: No abstract text available
    Text: Ultra Bright AlInGaP Chip LED Lamp LTST- C150/170/190KAKT Red Orange LTST- C150/170/190KFKT Yellow Orange LTST- C150/170/190KRKT Super Red LTST- C150/170/190KSKT Yellow LTST- C150/170/190KYKT Amber Yellow Features High brightness AlInGaP material Package in 8mm tape on 7" diameter reels.


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    PDF C150/170/190KAKT C150/170/190KFKT C150/170/190KRKT C150/170/190KSKT C150/170/190KYKT LTSTC150KAKT

    diode DB3 C531

    Abstract: DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design
    Text: 5 X A X X_FM X X_FM 2 1 +3VS H25 C266 C552 C704 C_NC C_NC C_NC H8 HOLES_S276D118 H16 HOLES_S276D118 H2 HOLES_S276D118 HOLES_S276D118 C150 C563 C78 C163 C_NC C_NC C_NC C_NC +1.8VS H22 H15 HOLES_S276D118 HOLES_S276D118 H3 HOLES_S276D118 H24 H12 HOLES_S276D118


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    PDF uPGA563 M741-1 M741-2 M741-3 M741-4 963L-1 963L-2 963L-3 diode DB3 C531 DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design

    S10601

    Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150


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    PDF S04050H S04070H S04100H S20600 S2061 NCM400C 2N1604 NCR400B S4003LS1 C10802 S10601 C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 S4003LS3

    IRF 80A

    Abstract: C-150 irf 600v WF-2
    Text: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    PDF IRGIB7B60KDPbF O-220AB I840G O-220AB IRF 80A C-150 irf 600v WF-2

    C-150

    Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    PDF IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 O-220AB. C-150 IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V

    10a 400v bipolar transistor

    Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220CTOR O-220AB. 10a 400v bipolar transistor C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v

    5C transistor

    Abstract: C100 C110 C120 C130 C150 C160 C180 C200 ZE1.5
    Text: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC


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    Zener 15c

    Abstract: ZE1.5 5C transistor C100 C110 C120 C130 C150 C160 C180
    Text: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC


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    transistor C110

    Abstract: C100 C110 C120 C130 C150 C160 C180 C200
    Text: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC


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    C100

    Abstract: C110 C120 C130 C150 C160 C180 C200
    Text: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC


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    IRGP30B60

    Abstract: C-150 IRGP30B60KD-E
    Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 4388A IRGP30B60KD-E O-247AD O-247AD IRGP30B60 C-150 IRGP30B60KD-E

    Untitled

    Abstract: No abstract text available
    Text: BZD23 SERIES REGULATOR DIODES Glass passivated diodes in herm etically sealed axial leaded ID* glass envelopes. They are intended for use as voltage regulator and transient suppressor diodes in medium power regulation and transient suppression circuits. The series consists o f B Z D 2 3 -C 7 V 5 to B ZD -C 510 in the normalized E24 range.


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    PDF BZD23 OD-81

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­


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    PDF 00Eb7E BZT03 BZT03-C7V5 BZT03-C510

    BZW03

    Abstract: d7v5 BZW03-C510 BZW03-C7V5 C100 C110 C120 C130 C150 C160
    Text: • ^53^31 □ □ E b 7 T 3 bS2 H A P X N AMER PHI LIPS /DI SCRETE B ZW 03 SERIES b'IE D REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression


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    PDF BZW03 BZW03-C7V5 BZW03-C510 OD-64. 005b7Tfl d7v5 C100 C110 C120 C130 C150 C160

    BZT03 27

    Abstract: BZT03-C510 C82 diode BZT03 BZT03-C7V5 C100 C110 C120 C130 C150
    Text: N AMER PH IL IPS/DISCRET E b'îE D bbS3^31 GGEbTET 7S7 • APX I BZT03 SERIES REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­


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    PDF BZT03 BZT03-C7V5 BZT03-C510 OD-57. BZT03 27 C82 diode C100 C110 C120 C130 C150

    BZT03 27

    Abstract: C82 diode BZT03 BZT03-C510 BZT03-C7V5 C100 C110 C8V2 DIODE C3331
    Text: N AMER PHILIPS/DISCRETE bbS3^31 b'îE D 00Eb7E'ì 757 • APX BZT03 SERIES I REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­


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    PDF 00Eb7Ecà BZT03 BZT03-C7V5 BZT03-C510 OD-57. QDSb733 BZT03 27 C82 diode C100 C110 C8V2 DIODE C3331

    c82 004

    Abstract: C6V8 C510 BZD27 C82 diode BZD27-C3V6 BZD27-C7V5 C100 C110 C270
    Text: Philips Semicpnductors bbSB^Bl QQ2b72Q S2T BBAPX Voltage regulator diodes 1 BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended for use as voltage regulator and


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    PDF 002b72G BZD27 BZD27-C3V6 BZD27-C7V5 C7V5-C510 MSA020 bb53T31 002b72A c82 004 C6V8 C510 C82 diode C100 C110 C270

    Bz027

    Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
    Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended


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    PDF QQ2b72G BZD27 BZD27-C3V6 BZD27-C7V5 C7V5-C510 MSA020 0D2b72fl S0D87. Bz027 C510 C82 diode c82 004 C100 C270 C7V5

    BZD27

    Abstract: No abstract text available
    Text: Philips Semlcpnductors HU b b 5 3 c131 QQ2b72D S2T HiAPX Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended


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    PDF QQ2b72D BZD27 BZD27-C3V6 BZD27-C7V5 C7V5-C510 bb53T31 Q02b757 bS3T31 DD2b72fl

    c82 004

    Abstract: C4V7 517
    Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass


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    PDF BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53R31 2b71R S0D81. c82 004 C4V7 517

    BZD23

    Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
    Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for


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    PDF bb53131 BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53T31 D02ti713 MGA020 c6v8 C510 bje 66 C82 diode C100 C110 C120

    MGA018

    Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
    Text: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and


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    PDF BZD23 BZD23-C3V6 C7V5-C510 BZD23-C7V5 MQA020 MGA018 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6

    D0214AC

    Abstract: D0-214AC BZG03-C33
    Text: T emic Semiconductors Zener Diodes continued Electrical Characteristics and r^jT ^Znorn Ir atV8 Part Number V y n V J*A Z-Diodes PVmax = 3 W, in SMD Package, P z s m = 600 W, tp = 100 |is BZG03/C10 10 9.4 to 10.6 <4 50 < 10 7.5 Izr for Vzr : mA BZG03/C11


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    PDF BZG03/C10 BZG03/C15 BZG03/C16 BZG03/C18 BZG03/C20 BZG03/C22 BZG03/C24 BZG03/C27 BZG03/C30 BZG03/C33 D0214AC D0-214AC BZG03-C33