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    C1815 POWER TRANSISTOR Search Results

    C1815 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1815 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor PDF

    transistor c1815

    Abstract: c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815
    Text: C1815 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    C1815 OT-23 OT-23 C1815 100uA, 100mA, 30MHz transistor c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    C1815HF

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 C1815 C1815 100uA, 30MHz C1815HF PDF

    C1815 GR

    Abstract: C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE
    Text: C1815 C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    C1815 100mA, 30MHz C1815 GR C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE PDF

    c1815 transistor

    Abstract: c1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    C1815 100mA, 30MHz c1815 transistor c1815 gr PDF

    c1815 gr

    Abstract: Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


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    C1815 100mA, 30MHz c1815 gr Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    C1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60


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    C1815 100mA, 30MHz PDF

    C1815 GR

    Abstract: OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors
    Text: C1815 NPN Plastic-Encapsulate Transistors P b Lead Pb -Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


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    C1815 O--92 100mA, 30MHz 23-Nov-06 C1815 GR OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR( NPN ) 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60


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    C1815 30MHz 270TYP 050TYP PDF

    C1815 GR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    C1815 100mA, 30MHz C1815 GR PDF

    C1815 transistors

    Abstract: transistors c1815 C1815
    Text: C1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage


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    C1815 01-Jun-2002 C1815 transistors transistors c1815 C1815 PDF

    C1815 NPN Transistor

    Abstract: C1815 TO92
    Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92 PDF

    c1815 SOT-23

    Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
    Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


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    C1815 OT-23 OT-23 MIL-STD-202E c1815 SOT-23 transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf PDF

    c1815 gr h

    Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
    Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    C1815 c1815 gr h C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR PDF

    C1815

    Abstract: 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor
    Text: C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 C B Top View 1 1 K Collector 2 E 2 3 MARKING: HF D F


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    C1815 OT-23 31-Dec-2009 C1815 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor PDF

    2SC1815

    Abstract: NPN SILICON EPITAXIAL TRANSISTOR C1815
    Text: MCC           !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


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    2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) NPN SILICON EPITAXIAL TRANSISTOR C1815 PDF

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


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    2SC1815 2SC1815 C1815 100uAdc, 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g PDF

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 C1815 GR 2SC1815 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


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    2SC1815 2SC1815 C1815 100uAdat) 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 C1815 GR 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y PDF

    pin configuration NPN transistor 2sc1815

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


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    2SC1815 2SC1815 C1815 100mAdc, 10mAdc) 310mAdc) 10Vdc, 30MHz) pin configuration NPN transistor 2sc1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-23 A1015 C1815 -10mA 30MHz PDF