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    C1973 TRANSISTOR Search Results

    C1973 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C1973 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1A227

    Abstract: ABB HAFO C1973 transistor hafo AD8015 AD8015 Circuits ABB HAFO PHOTODIODE C1973 hafo photo diode PECL ABB
    Text: a Wideband/Differential Output Transimpedance Amplifier AD8015 FUNCTIONAL BLOCK DIAGRAM FEATURES Low Cost, Wide Bandwidth, Low Noise Bandwidth: 240 MHz Pulse Width Modulation: 500 ps Rise Time/Fall Time: 1.5 ns Input Current Noise: 3.0 pA/√Hz @ 100 MHz Total Input RMS Noise: 26.5 nA to 100 MHz


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    AD8015 AD8015 C1973 100pF 1A227 ABB HAFO C1973 transistor hafo AD8015 Circuits ABB HAFO PHOTODIODE hafo photo diode PECL ABB PDF

    power amplifier absolute AD 3600 SCHEMATIC

    Abstract: A3550
    Text: a Wideband/Differential Output Transimpedance Amplifier AD8015 FU NCTIONAL B LOCK D IAGRAM FEATURES Low Cost, Wide Bandw idth, Low Noise Bandw idth: 240 M Hz Pulse Width M odulation: 500 ps Rise Time/ Fall Time: 1.5 ns Input Current Noise: 3.0 pA/ √Hz @ 100 M Hz


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    AD8015 100pF power amplifier absolute AD 3600 SCHEMATIC A3550 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF